BMF011MR12E1G3

BMF011MR12E1G3 BASICSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 11

Technical content

Package: Pcore TM E1B Schematic Diagram 1 / 11www.basicsemi.com VDSS RDS(on).typ 1200V 120 A 13 mΩ@VGS=18 V ID (TH=80°C) Product Summary Note: This module is under development. Therefore, this preliminary specification might be changed in near future.If you use these data for various calculation, please contact us. Full Bridge Module SiC 1200V MOSFET Target Datasheet Rev. 0.0 Electrical Features Low RDS(on) High current density Low inductance design Low switching losses Less susceptible to malfunction due to high threshold voltage: VGS(th).typ = 4.0V Built-in SiC schottky barrier diode Zero Reverse Recovery from Diodes Low diode forward voltage Intergrated NTC temperature sensor Press-FIT contact technology  Rugged mounting due to intergrated mouting clamps Mechanical Features High Frequency converter/Inverters DC-DC Converters  EV Chargers  UPS systems  Solar applications Potential Applications  Si3N4 ceramic substrate with excelent power cycling capability DC- DC+ AC NTC BMF011MR12E1G3

2 / 11www.basicsemi.com Maximum Ratings(at T vj=25°C unless otherwise specified) Recommended values Symbol Parameter Test Conditions UnitMaximum Ratings V A W V VDSS ]+VGSS] ]-VGSS] ]ID] ]IDM] ]-ID](*2) ]IDRM] PD Tvjop Tstg Visol Drain-source voltage, gate-source short-circuited Gate-source voltage, drain-source short-circuited Drain current Continuous (*1) (*1) (*3) Pulsed Pulsed Tvj=175°C, TH=25°C RMS, AC, 50Hz, 1min Power dissipation Operating virtual junction temperature (under switching conditions) Storage temperature Isolation test voltage 1200 120 240 120 240 390 175 -40~125 3000 TH=80°C Continuous TH=80°C (*1) Including under switching condition (*2) Only for Body diode (*3) Only the duty of temperature over 150 deg.C and under 175 deg.C against 150 deg.C can be available within 20%. Target Datasheet Rev. 0.0 V V +18…+20 -6…0 VGS(on) VGS(off) On-state gate voltage Off-state gate voltage Symbol Parameter Test Conditions Values Unit BMF011MR12E1G3

3 / 11www.basicsemi.com SiC MOSFET Module Target Datasheet Rev. 0.0 ]+IGSS] ]-IGSS] VGS(th) Electrical properties of MOSFET (at Tvj= 25°C unless otherwise specified) μA μA V mΩ nF Ω µJ nC mJ ns Drain current, with gate short-circuited to source Gate leakage current, with drain short-circuited to source Gate-source threshold voltage Drain-source on-state resistance IDSS RDS(on) (@terminals) RDS(on) (@chip) VGS=0V VDS=1200V VDS=0V VGS=25V VDS=0V VGS=-10V VDS=800V, VGS= 0V VDS=800V, ID=100A, VGS=18V/-4V VDS=10V ID =39mA VGS=18V ID =100A VGS =0V VDS ƒ VGS=18V ID =100A Tvj=25°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. Ciss Coss Crss Eoss RG(int) QG Eon Eoff Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Total gate charge Turn-on switching energy Turn-off switching energy td(on) tr Turn-on delay time Rise time Coss stored energy =+18V/-4V; =600V =100A =5.6Ω =4.3Ω =35nH Eon includes diode reverse recovery VGS VDS ID RG(on) RG(off) Lσ ƒ =1MHz, open drain 4.0 0.3 0.3 3.0 13.0 21.0 10.5 14.5 16.5 8.8 0.4 0.01 170 0.73 246 1.2 0.9 1.0 1.0 5.0 17.0 - - td(off) tf Turn-off delay time Fall time =800V =100kHz BMF011MR12E1G3

4 / 11www.basicsemi.com SiC MOSFET Module Target Datasheet Rev. 0.0 Tvj=25°C 2.10 3.50 1.80 2.95 1.0 1.1 0.38 0.45 Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C VSD (@terminals) V ns A mJ µC Diode forward on voltage VSD (@chip) VGS=-4V ISD =100A VGS=-4V ISD =100A Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. trr Qrr Reverse recovery time Recovered charge Irrm Err Peak reverse recovery current Reverse recovery energy Tvj=25°C 1.20 2.15 0.90 1.60 Tvj=175°C Tvj=25°C Tvj=175°C VSD (@terminals) VDiode forward on voltage VSD (@chip) VGS=+18V ISD =100A VGS=+18V ISD =100A Electrical properties of Body Diode (at T vj= 25°C unless otherwise specified) Thermal properties NTC Thermistor K/WPer Switch TA=25±0.01°C TA=25±0.01°C TA=25±0.5°C TA=25±0.5°C R50 = R25 exp [B25/50(1/T50 - 1/T25)] Rth(j-c) Rth(c-h) Thermal resistance junction to case Thermal resistance case to heatsink 5 - 0.17- - K/W Per Switch Conductivity of thermal grease : 2W/mK Thickness of thermal grease : 50um -- 0.21 Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. kΩ K mW/°C mW R25 pr R25/50 δ ΔR/R Nominal resistance Deviation of R25 B-Value Power Dissipation Constant Power Dissipation 3375 1.2 -3 3 11.5 6.3 10.0 5.0 >175 2.1 20.0 Si3N4- - - 50.0 Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. Module mm mm nH mΩ N g dCreep dClear Internal isolation basic insulation terminal to heatsink terminal to terminal terminal to heatsink terminal to terminal Creepage distance Clearance Comperative tracking index Mounting force per clamp *Current under operating conditions is limited by 25Arms in one pin. Weight Stray inductance module Module lead resistance, terminals - chip Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. CTI RDD'+SS' F G Lp TC =25°C, per switch =+18V/-4V; =600V =100A =5.6Ω =4.3Ω VGS VDS ISD RG(on) RG(off) =35nHLσ BMF011MR12E1G3

5 / 11www.basicsemi.com Fig.2 Tvj=175ºC Typical Output Characteristics Fig.1 Tvj=25ºC Typical Output Characteristics Fig.3 Tvj=25ºC 3rd Quadrant Characteristics Fig.5 Typical Gate Threshold Voltage vs. Junction Temperature Fig.4 Tvj=175ºC 3rd Quadrant Characteristics Fig.6 Typical Static Drain-Source On-Resistance vs. Junction Temperature Target Datasheet Rev. 0.0 -50 0 50 100 150 200 Gate Threshold Voltage : V GS(th) [V] Junction Temperature : Tvj [ºC] ID =78mA VDS=10V Pulsed BMF011MR12E1G3 100 150 200 0 2 4 6 8 10 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=25°C Pulsed VGS=12, 14, 16, 18, 20, 25V VGS=10 100 150 200 0 2 4 6 8 10 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=175°C Pulsed VGS=10, 12, 14, 16, 18, 20, 25V -200 -150 -100 -50 -10 -8 -6 -4 -2 0 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=25°C Pulsed VGS= -5V VGS= 0V VGS= 10V VGS= 15V VGS= 18V VGS= 20V -200 -150 -100 -50 -10 -8 -6 -4 -2 0 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=175°C Pulsed VGS= -5V VGS= 0V VGS= 10V VGS= 15V VGS= 18V VGS= 20V -50 0 50 100 150 200 Static Drain-Source On-Resistance: R DS(on) [mΩ] Junction Temperature : Tvj [oC] VGS =18V ID =200A Pulsed

6 / 11www.basicsemi.com Fig.8 Typical Static Source-Drain Voltage vs. Junction Temperature (VGS=+18V, Chip) Fig.7 Typical Static Source-Drain Voltage vs. Junction Temperature (VGS=-4V, Chip) Fig.9 Typical Transfer Characteristics Fig.11 Coss Stored Energy Fig.10 Typical Capacitance vs. Drain-Source Voltage Fig.12 Dynamic Input Characteristics Target Datasheet Rev. 0.0 100 1000 10000 100000 0.1 1 10 100 1000 Capacitance : C [pF] Drain-Source Voltage: VDS [V] Ciss Coss Crss Tvj =25°C f =100kHz VGS =0V 100 150 200 250 300 0 200 400 600 800 1000 Coss Stored Energy : Eoss [µJ] Drain-Source Voltage: VDS [V] Tvj=25°C 0 50 100 150 200 250 300 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Tvj =25°C VDD =800V ID =100A Pulsed BMF011MR12E1G3 0 50 100 150 200 Static Source-Drain Voltage : V SD [V] Junction Temperature : Tvj [oC] VGS =-4V -ID =100A Pulsed 0 50 100 150 200 Static Source-Drain Voltage : V SD [V] Junction Temperature : Tvj [oC] VGS =+18V -ID =100A Pulsed 100 120 140 160 180 200 0 5 10 15 Drain current : ID [A] Gate-Source Voltage: VGS [V] Tvj=175°C Tvj=25°C VDS=10V Pulsed

7 / 11www.basicsemi.com Fig.14 Typical Switching Loss vs. External Gate Resistance VDD=600V, VGS=+18/-4V, ID=100A Fig.13 Typical Switching Loss vs. Drain Current VDD=600V, VGS=+18/-4V, RG(on)=5.6Ω, RG(off)=4.3Ω Fig.15 Typical Switching Time vs. Drain Current VDD=600V, VGS=+18/-4V, RG(on)=5.6Ω, RG(off)=4.3Ω Fig.16 Typical Switching Time vs. External Gate Resistance VDD=600V, VGS=+18/-4V, ID=100A Fig.17 Reverse bias safe operating area (max.) VGS=+18/-4V, RG(on) ≥ 5.6Ω, RG(off) ≥ 4.3Ω, Tvj=175°C Fig.18 NTC Resistance vs. Temperature Target Datasheet Rev. 0.0 0.01 0.1 100 1000 -50 0 50 100 150 200 Resistance : R NTC [KΩ] Temperature : T [ºC] BMF011MR12E1G3 td(on) td(on) tf td(off) td(off) tr tr 0.5 1.5 2.5 3.5 0 50 100 150 200 Switching Energy : E [mJ] Drain Current : ID [A] Eon Eoff Err Tvj=25°C Tvj=175°C 0 5 10 15 20 Switching Energy : E [mJ] External Gate Resistance : RG [Ω] Eon Eoff Err Tvj=25°C Tvj=175°C 100 120 0 50 100 150 200 Switching Time : t [nsec] Drain Current : ID [A] Tvj=25°C Tvj=175°C 100 150 200 250 300 0 5 10 15 20 Switching Time : t [nsec] External Gate Resistance : RG [Ω] Tvj=25°C Tvj=175°C tf 100 150 200 250 0 500 1000 1500 Drain current: ID [A] Drain-source voltage: VDS [V] RBSOA (Repetitive pulse) Chip Module

8 / 11www.basicsemi.com Fig.20 Typical Time and Peak Current of reverse recovery vs. External Gate Resistance VDD=600V, VGS=+18/-4V, ID=100A Fig.19 Typical Time and Peak Current of reverse recovery vs. Drain Current VDD=600V, VGS=+18/-4V, RG(on)=5.6Ω, RG(off)=4.3Ω Fig.21 Transient Thermal Impedance Zth(j-c).max= f(t) Target Datasheet Rev. 0.0 BMF011MR12E1G3 100 1000 0 40 80 120 160 200 Reverse Recovery Time : t [nsec] Reverse Recovery Peak Current : Irrm [A] Drain Current : ID [A] Irrm trr Tvj=25°C Tvj=175°C 100 1000 0 5 10 15 20 Reverse Recovery Time : t [nsec] Reverse Recovery Peak Current : Irrm [A] External Gate Resistance : RG [ [Ω trr Irrm Tvj=25°C Tvj=175°C 0.01 0.1 0.001 0.01 0.1 1 Thermal Impedance : Z th(j-c) [K/W] Time : tw [sec]

9 / 11www.basicsemi.com Definition of Switching Parameter (i) MOSFET (ii) Body Diode Target Datasheet Rev. 0.0 V GS +V GS 90% -V GS 10% I DV DS, I D 90％I D 90％I D 10％I D V DS 10％I D t d(on) t d(off) t r t f t (on) = td(on) + t r t (off) = t d(off) + t f V GS +V GS 90% -V GS 10% I DV DS, I D V DS2%V DS 2%I D t 1 t 2 t 3 t 4 V DS V DSI S I S 10% 10% 0 0 V DS I S V DS I S -I rrm t rr t 5 t 6 BMF011MR12E1G3

Package Dimensions (Unit: mm) Equivalent Circuit SiC MOSFET Module 10 / 11www.basicsemi.com Target Datasheet Rev. 0.0 DC- DC+ ACS1 BMF011MR12E1G3 16.42±0.50 12.14±0.35 1.44±0.20 21.25 26.50 16.00 9.60 3.20 3.20 6.40 9.60 16.00 21.25 26.50 3.20 9.60 12.80 14.05 6.40 9.60 12.80 14.05 33.80±0.30 28.10±0.20 19.40±0.20 16.40±0.20 62.80±0.50 48.00±0.30 41.00±0.20 36.80±0.20 42.50±0.20 53.00±0.10 4.50±0.10 2.30 0.00 -0.10 X8.50+0.30 DC- DC- DC- DC- DC+ DC+ DC+ DC+ AC AC AC ACG2 PINOUT

11 / 11www.basicsemi.com

Revision History

BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Notice and Warning Due to technical requirements products may contain dangerous substances.For information on the types in question please contact your nearest BASiC Semiconductor office. Except as otherwise explicitly approved by BASiC Semiconductor in a written document signed by authorized representatives of BASiC Semiconductor,BASiC Semiconductor’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. This product is not authorized for use (1) in life support systems or (2) for applications implanted into the human body, without the express written approval of BASiC Semiconductor. Document Version Date of Release Description of Changes Rev. 0.0 2024-09-24 Release of the initial datasheet. Target Datasheet Rev. 0.0 BMF011MR12E1G3