BLV640 BELLING | Alldatasheet
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Technical content
N-channel Enhancement Mode Power MOSFET
- Avalanche Energy Specified BVDSS 200V
- Fast Switching R DS(ON) 0.18 ΩΩ ΩΩ
- Simple Drive Requirements ID 18A
Description
This advanced low voltage MOSFET is produced using Belling’s proprietary MOS technology. Designed for high efficiency switch mode power supply Absolute Maximum Ratings ( TC =25 oC unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage + 30 V Continuous Drain Current 18 A ID Continuous Drain Current ( TC =100 oC ) 11 A IDM Drain Current (pulsed) (Note 1) 72 A Power Dissipation 125 W PD Linear Derating Factor 1.0 W/ ℃ EAS Single Pulsed Avalanche Energy (Note2) 580 mJ IAR Avalanche Current 18 A EAR Repetitive Avalanche Energy 13 mJ Tj Operating Junction Temperature Range -55 to +15 0 oC TSDG Storage Temperature Range -55 to +150 oC Thermal Characteristics Symbol Parameter Value Units R th j-c Thermal Resistance, Junction to case Max. 0.5 ℃/ W R th j-a Thermal Resistance, Junction to Ambient Max. 62.5 ℃/ W
N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC =25C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage VGS =0V, ID =250uA 200 - - V R DS(ON) Static Drain-Source On-Resistance VGS =10V, ID =11A - - 0.18 Ω VGS(th) Gate Threshold Voltage VDS =VGS , ID =250uA 2 - 4 V g fs Forward Transconductance(note3) VDS =15V, ID =11A 6.7 - - S IDSS Drain-Source Leakage Current VDS =200V, VGS =0V - - 1 uA Drain-Source Leakage Current Tc=125 ℃ VDS =160V, VGS =0V - - 50 uA IGSS Gate-Source Leakage Current VGS = ± 30V - - ±100 nA Q g Total Gate Charge - 35.7 70 nC Q gs Gate-Source Charge - 6.7 13 nC Q gd Gate-Drain Charge VDD =160V ID =18A VGS =10V Note3 - 17.5 39 nC t (on) Turn-on Delay Time - 40 - ns t r Turn-on Rise Time - 132 - ns t (off) Turn-off Delay Time - 93 - ns t f Turn-off Fall Time VDD =100V ID =18A R G =25 Ω Note3 - 31 - ns C iss Input Capacitance - 1312 - pF C oss Output Capacitance - 159 - pF C rss Reverse Transfer Capacitance VDS =25V VGS =0V f = 1MHz - 38 - pF Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Diode Forward Current - - 18 A ISM Pulsed Source Diode Forward Current (note1) - - 72 A VSD Forward On Voltage VGS =0V, IS=18A - - 2.0 V t r r Reverse Recovery Time - 300 600 ns Q r r Reverse Recovery Charge VGS =0V, IS=180A dI F/dt = 100A/us - 3.4 7.1 uC Note ： (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Vdd=50V, L=2.7mH, Ias=18A, Rg=25 Ω , staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2%
N-channel Enhancement Mode Power MOSFET Typical Characteristics Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. Transconductance Fig 4. On-Resistance vs. Drain Current
N-channel Enhancement Mode Power MOSFET Typical Characteristics （（ （（continued ）） ）） Fig 5. On-Resistance vs. Junction Temperature Fig 6. Body Diode Forward Voltage Fig 7. Gate Charge Characteristics Fig 8. Capacitance Characteristics
N-channel Enhancement Mode Power MOSFET Typical Characteristics （（ （（continued ）） ）） Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve
N-channel Enhancement Mode Power MOSFET Test Circuit and Waveform Fig 12. Gate Charge Waveform Fig 11. Gate Charge Circuit Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit Fig 16. Unclamped Inductive Switching Waveforms