BLM7002 BELLING | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
www.belling.com.cn V2.0 Page1 BLM 7002 Pb Free Product N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES
- VDS = 60V,I D = 0.115A R DS(ON) < 3Ω @ V GS =5V R DS(ON) < 2Ω @ V GS =10V
- Lead free product is acquired
- Surface Mount Package Application
- Direct Logic-Level Interface: TTL/CMOS
- Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
- Battery Operated Systems
- Solid-State Relays Schematic diagram Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity
7002 BLM7002 SOT-23 Ø180mm 8 mm 3000 units
Absolute Maximum Ratings (TA=25 ℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 0.115 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM 0.8 A Maximum Power Dissipation PD 0.2 W Operating Junction and Storage Temperature Range TJ,T STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 625 /W℃
www.belling.com.cn V2.0 Page2 BLM 7002 Pb Free Product Electrical Characteristics (TA=25 ℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250 µA 60 68 - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V - - 1 µA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =V GS ,I D =250 µA 1 1.7 2.5 V VGS =5V, I D =0.05A - 1.3 3 Ω Drain-Source On-State Resistance R DS(ON) VGS =10V, I D =0.5A - 1.1 2 Ω Forward Transconductance g FS V DS =10V,I D =0.2A 0.08 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 20 50 PF Output Capacitance C oss - 10 20 PF Reverse Transfer Capacitance C rss VDS =30V,V GS =0V, F=1.0MHz - 3.6 5 PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 50 - nS Turn-Off Delay Time t d(off) - 17 - nS Turn-Off Fall Time t f VDD =30V,I D =0.2A VGS =10V,R GEN =10 Ω - 10 - nS Total Gate Charge Q g VDS =10V,I D =0.115A, VGS =4.5V - 1.7 3 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S=0.115A - - 1.2 V Diode Forward Current (Note 2) I S - - 0.115 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
www.belling.com.cn V2.0 Page5 BLM 7002 Pb Free Product Square Wave Pluse Duration(sec) Figure 12 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance
www.belling.com.cn V2.0 Page6 BLM 7002 Pb Free Product SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.