BLM4435 BELLING | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

www.belling.com.cn V2.0 Page1 BLM 4435 Pb Free Product P-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The BLM4435 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES

  • VDS = -30V,I D = -9.1A R DS(ON) < 35mΩ @ V GS =-4.5V R DS(ON) < 20mΩ @ V GS =-10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package Application
  • Battery Switch
  • Load switch
  • Power management D G S Schematic diagram Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

4435 BLM4435 SOP-8 Ø330mm 12mm 2500 units

Absolute Maximum Ratings (TA=25 ℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -9.1 A Drain Current-Pulsed (Note 1) IDM -50 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ,T STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 40 /W℃ Electrical Characteristics (TA=25 ℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250 µA -30 -33 - V

www.belling.com.cn V2.0 Page2 BLM 4435 Pb Free Product Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 µA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =V GS ,I D =-250 µA -1 -1.5 -3 V VGS =-10V, I D =-9.1A - 15 20 m Ω Drain-Source On-State Resistance R DS(ON) VGS =-4.5V, I D =-6.9A - 21 35 m Ω Forward Transconductance g FS V DS =-15V,I D =-9.1A 10 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1600 - PF Output Capacitance C oss - 350 - PF Reverse Transfer Capacitance C rss VDS =-15V,V GS =0V, F=1.0MHz - 300 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 15 - nS Turn-Off Delay Time t d(off) - 110 - nS Turn-Off Fall Time t f VDD =-15V, ID=-1A, VGS =-10V,R GEN =6 Ω 70 - nS Total Gate Charge Q g - 30 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd VDS =-15V,I D =-9.1A VGS =-10V - 8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S=-2.1A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production

www.belling.com.cn V2.0 Page6 BLM 4435 Pb Free Product SOP-8 PACKAGE IN FORMATION