BLM8205 BELLING | Alldatasheet
Document overview
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Technical content
www.belling.com.cn V2.0 Page1 BLM 8205 Pb Free Product N-Channel Enhancement Mode Power MOSFET
Description
The BLM8205 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
- VDS = 19.5V,I D = 4A R DS(ON) <37mΩ @ V GS =2.5V R DS(ON) < 27mΩ @ V GS =4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package Application
- Battery protection
- Load switch
- Power management G 1 D 2 G 2 S 2 D 1 S 1 Schematic diagram Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity
8205 BLM8205 SOT23-6L Ø180mm 8mm 3000 units
Absolute Maximum Ratings (TA=25 ℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 19.5 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 4 A Drain Current-Pulsed (Note 1) IDM 25 A Maximum Power Dissipation PD 1.25 W Operating Junction and Storage Temperature Range TJ,T STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 100 /W℃ Electrical Characteristics (TA=25 ℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250 µA 19.5 21 - V Zero Gate Voltage Drain Current I DSS V DS =19.5V,V GS =0V - - 1 µA
www.belling.com.cn V2.0 Page2 BLM 8205 Pb Free Product Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =V GS ,I D =250 µA 0.5 0.7 1.2 V VGS =4.5V, I D =4A - 21 27 m Ω Drain-Source On-State Resistance R DS(ON) VGS =2.5V, I D =3A - 27 37 m Ω Forward Transconductance g FS V DS =5V,I D =4A - 10 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 800 - PF Output Capacitance C oss - 155 - PF Reverse Transfer Capacitance C rss VDS =8V,V GS =0V, F=1.0MHz - 125 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 18 - nS Turn-on Rise Time t r - 5 - nS Turn-Off Delay Time t d(off) - 43 - nS Turn-Off Fall Time t f VDD =10V,I D =1A VGS =4V,R GEN =10 Ω - 20 - nS Total Gate Charge Q g - 11 - nC Gate-Source Charge Q gs - 2.3 - nC Gate-Drain Charge Q gd VDS =10V,I D =4A, VGS =4.5V - 2.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S=2A - 0.8 1.2 V Diode Forward Current (Note 2) I S - - 2 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
www.belling.com.cn V2.0 Page6 BLM 8205 Pb Free Product SOT23-6L PACKAGE INFORMATION