BLM3050K BELLING | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The BLM3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

  • V DS =30V,I D =50A R DS(ON) < 11mΩ @ V GS =10V R DS(ON) < 16mΩ @ V GS =5V
  • High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current
  • Good stability and uniformity with high E AS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible Power Supply 100% UIS TESTED! Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3050K BLM3050K TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 50 A Drain Current-Continuous(T C =100℃) I D (100℃) 35 A Pulsed Drain Current I DM 140 A Maximum Power Dissipation P D 60 W Derating factor

0.4 W/℃

Single pulse avalanche energy (Note 5) E AS 70 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ Page1 www.belling.com.cn V2.0

Thermal Resistance,Junction-to-Case(Note 2) R θJC 2.5 /W℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1 1.6 3 V V GS =10V, I D =25A - 8 11 Drain-Source On-State Resistance R DS(ON) V GS =5V, I D =20A - 10 16 mΩ Forward Transconductance g FS V DS =5V,I D =20A 15 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2000 - PF Output Capacitance C oss - 280 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 160 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 8 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f V DD =15V,I D =20A V GS =10V,R GEN =1.8Ω - 5 - nS Total Gate Charge Q g - 23 - nC Gate-Source Charge Q gs - 7 - nC Gate-Drain Charge Q gd V DS =10V,I D =25A, V GS =10V - 4.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =25A - 0.85 1.2 V Diode Forward Current (Note 2) I S - - 40 A Reverse Recovery Time t rr - 22 35 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 40A di/dt = 100A/μs(Note3) - 12 20 nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃, V DD =15V,V G =10V,L=1mH, Rg=25Ω Page2 www.belling.com.cn V2.0

1）E AS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： Page3 www.belling.com.cn V2.0

Page6 www.belling.com.cn V2.0