BLM2004NE BELLING | Alldatasheet

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Technical content

V2.1 = 22m = 17m www.belling.com.cn Page1 BLM 2004N E Pb Free Product N-Channel Enhancement Mode Power MOSFET

Description

The BLM2004NE uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features

  • V DS = 20V,I D =6A ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package Application
  • PWM application
  • Load switch Schematic diagram Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2004NE BLM2004NE SOT23-6L Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V Drain Current-Continuous I D 6 A Drain Current-Pulsed (Note 1) I DM 30 A Maximum Power Dissipation P D 1.25 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 100 /W℃ =2.5V =4.5V Typ.R DS(ON) Ω @ V GS Typ.R DS(ON) Ω @ V GS

www.belling.com.cn Page2 BLM 2004N E Pb Free Product Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250µA 20 - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 1 µA Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±10 µA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250µA 0.45 0.7 1.0 V V GS =4.5V, I D =6A - 17 24 m Ω Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =5A - 22 30 m Ω Forward Transconductance g FS V DS =5V,I D =6A - 20 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 650 - PF Output Capacitance C oss - 140 - PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz - 60 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 0.5 nS Turn-on Rise Time t r - 1 nS Turn-Off Delay Time t d(off) - 12 nS Turn-Off Fall Time t f V DD =10V,R L =1. 5Ω V GS =5V,R GEN =3Ω - 4 nS Total Gate Charge Q g - 8 nC Gate-Source Charge Q gs - 2.5 - nC Gate-Drain Charge Q gd V DS =10V,I D =6A, V GS =4.5V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A - - 1.2 V Diode Forward Current (Note 2) I S - - 6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production V2.1

www.belling.com.cn Page5 BLM 2004N E Pb Free Product Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance V2.1

www.belling.com.cn Page6 BLM 2004N E Pb Free Product SOT23-6L PACKAGE INFORMATION V2.1