BLV297 BELLING | Alldatasheet
Document overview
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Technical content
http://www.belling.com.cn - 1 - 2/27/2008 Total 1 Pages BLV297 N-channel Enhancement Mode Power MOSFET
- Ease of Paralleling BVDSS 200V
- Fast Switching R DS(ON) 2.0 ΩΩ ΩΩ
- Simple Drive Requirements ID 0.65A
Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit . o Die size with scribe line 1570 µm X 1570 µm Scribe line 80um o Die Thickness 300 ± 20um o Metallization Top Al Bottom Ti / Ni / Ag o Bonding Pad Size Gate 140 µm X 102 µm Source 540 µm X 540 µm o Passivation
Electrical Characteristics
( TC =25C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage VGS =0V, ID =250uA 200 - - V R DS(ON) Static Drain-Source On-Resistance VGS =10V, ID =0.65A - - 2.0 Ω VGS(th) Gate Threshold Voltage VDS =VGS , ID =400uA 0.5 - 1.8 V IDSS Drain-Source Leakage Current VDS =200V, VGS =0V - - 0.1 uA IGSS Gate-Source Leakage Current VGS = 20V - - 10 nA VSD Forward On Voltage VGS =0V, IS=0.65A - - 1.2 V