BLM138K BELLING | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
www.belling.com.cn Page V2.0 BLM138K Pb Free Product N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES
- V DS = 50V,I D = 0.22A R DS(ON) < 3Ω @ V GS =5V R DS(ON) < 2Ω @ V GS =10V ESD Rating：HBM 2300V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package Application
- Direct Logic-Level Interface: TTL/CMOS
- Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
- Battery Operated Systems
- Solid-State Relays Schematic diagram Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 138K BLM138K SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 50 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 0.22 A Drain Current-Pulsed (Note 1) I DM 0.88 A Maximum Power Dissipation P D 0.35 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 350 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 50 65 - V Zero Gate Voltage Drain Current I DSS V DS =50V,V GS =0V - - 1 μA
www.belling.com.cn Page V 2 . 0 BLM138K Pb Free Product V GS =±10V,V DS =0V - ±110 ±500 nA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - ±0.3 ±10 uA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.6 1.1 1.6 V www.belling.com.cn Page V 2 . 0 BLM138K Pb Free Product V GS =±10V,V DS =0V - ±110 ±500 nA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - ±0.3 ±10 uA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.6 1.1 1.6 V V GS =5V, I D =0.2A - 1.3 3 Ω Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =0.22A - 1 2 Ω Forward Transconductance g FS V DS =10V,I D =0.2A 0.2 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 30 - PF Output Capacitance C oss - 15 - PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 6 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - - 5 nS Turn-on Rise Time t r - - 5 nS Turn-Off Delay Time t d(off) - - 60 nS Turn-Off Fall Time t f V DD =30V,I D =0.22A V GS =10V,R GEN =6Ω - - 35 nS Total Gate Charge Q g V DS =25V,I D =0.2A, V GS =10V - - 2.4 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =0.22A - - 1.3 V Diode Forward Current (Note 2) I S - - 0.22 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production
www.belling.com.cn Page V 2 . 0 BLM138K Pb Free Product Square Wave Pluse Duration(sec) Figure 12 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Im p edance
www.belling.com.cn Page V 2 . 0 BLM138K Pb Free Product SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.