BLH3355 BELLING | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
/square4 Low noise and high gain bandwidth product /square4 High power gain
Applications
/square4 UHF / VHF wide band amplifier Structure Size /square4 Planar type /square4 Electrodes: Aluminum alloy /square4 Backside metal: Au alloy /square4 Chip size: 370 µm ×370 µm /square4 Chip thickness: 220±20 µm. /square4 Pad size: φ100 µm ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VCBO Collector to Base Voltage 20 V VCEO Colle ctor to Emitter Voltage 12 V VEBO Emitter to Base Voltage 3.0 V IC Collector Current 100 mA Ptot Total Power Dissipation 200 mW Tj Junction Temperature 150 °C Tstg Storage Temperature −65 to +150 °C
ELECTRICAL CHARACTERISTICS
T j = 25 oC unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector Cut -off Current VCB =10V, I E=0mA - - 1.0 µA IEBO Emitter Cut -off Current VEB =1.0V, I C =0mA - - 1.0 µA hFE DC Current Gain VCE =10V, I C =20mA 50 120 25 0 nA
http://www.belling.com.cn - 2 - 8/18/2006 Total 2 Pages PATTERN DRAWING B E E B (0.8 µm design) (0.6 µm design )