BLF872_2015 JMNIC | Alldatasheet
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1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
1.2 Features
■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2× 0.9 A: ◆ Peak envelope power load power PL(PEP) = 300 W ◆ Gain Gp =1 5d B ◆ Drain efficiencyηD =4 3% ◆ Third order intermodulation distortion IMD3 =−28 dBc ■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2× 0.9 A: ◆ Average output power PL(AV) =7 0W ◆ Gain Gp =1 5d B ◆ Drain efficiencyηD =3 0% ◆ Third order intermodulation distortion IMD3 =−28 dBc (4.3 MHz from center frequency) ■ Advanced flange material for optimum thermal behavior and reliability ■ Excellent ruggedness ■ High power gain ■ Designed for broadband operation (UHF band) ■ Excellent reliability ■ Internal input and output matching for high gain and optimum broadband operation ■ Source on underside eliminates DC isolators, reducing common-mode inductance ■ Easy power control BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 2 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor
1.3 Applications
■ Communication transmitter applications in the UHF band ■ Industrial applications in the UHF band
1.4 Quick reference data
[1] Th is the heatsink temperature. [2] Black video signal, sync expansion: input sync = 33 %; output sync≥ 27 %. [3] Measured dBc at 4.3 MHz from center frequency. 2. Pinning information [1] Connected to flange. 3. Ordering information Table 1: Quick reference data Typical RF performance at VDS = 32 V and Th =2 5°C in a common-source narrowband 860 MHz test circuit.[1] Mode of operation f (MHz) PL (W) PL(PEP) (W) PL(AV) (W) G p (dB) ηD (%) IMD3 (dBc) CW, class AB 860 300 - - 14 55 - 2-tone, class AB f 1 = 860; f2 = 860.1 - 300 - 15 42 −28 PAL BG 860 (ch69) 300 (peak sync.) [2] - - 15 42 - DVB-T (8K OFDM) 858 - - 70 15 30 −28 [3] Table 2: Pinning Description Pin Simplified outline drain 1 1 drain 2 2 gate 1 3 gate 2 4 source 5 [1] Table 3: Ordering information Type number Package Name Description Version BLF872 - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT800-1
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 3 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 4. Limiting values 5. Thermal characteristics [1] Th is the heatsink temperature. [2] R th(j-h) is dependent on the applied thermal compound and clamping/mounting of the device. 6. Characteristics [1] ID is the drain current. [2] Capacitance values without internal matching. Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage - ±13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Table 5: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-c) thermal resistance from junction to case Th =2 5°C [1] 0.32 K/W R th(j-h) thermal resistance from junction to heatsink Th =2 5°C [1][2] 0.4 K/W Table 6: Characteristics Tj=2 5°C unless otherwise specified. Symbol Parameter Conditions[1] Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V ; ID =5m A 6 5 - - V VGSth gate-source threshold voltage VDS = 20 V; ID = 250 mA 5.2 - 6.2 V IDSS drain leakage current V GS =0V ; VDS =3 2V - - 2 . 2 µA IDSX drain cut-off current V GS =V GSth + 6 V; VDS =1 0V - 4 1 - A IGSS gate leakage current V GS =1 0V ; VDS =0V - - 4 0 n A gfs forward transconductance V GS =2 0V ; ID =1 6A - 1 0 - S R DSon drain-source on-state resistance VGS =V GSth + 6 V; ID =9A - 8 0 - m Ω C iss input capacitance V GS = 0 V; VDS =3 2V ; f=1M H z [2] - 200 - pF C oss output capacitance V GS = 0 V; VDS =3 2V ; f=1M H z [2] -7 0 - p F C rss reverse transfer capacitance VGS = 0 V; VDS =3 2V ; f=1M H z [2] - 2.5 - pF
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 4 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 7. Application information [1] Sync. compression: input sync.≥ 33 %, output sync. 27 %. VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance Coss as a function of drain-source voltage VDS ; typical values per section; capacitance value without internal matching VDS (V) 05 0 4020 3010 001aad743 100 150 200 C oss (pF) Table 7: RF performance in a common-source 860 MHz narrowband test circuit Th =2 5°C unless otherwise specified.[1] Mode of operation f VDS IDq PL(PEP) PL(AV) G p ηD IMD3 ΔG p (MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB) 2-tone, class AB f 1 = 860; f2 = 860.1 32 2 × 0.9 300 - > 14 > 40 ≤− 25 ≤ 1 DVB-T (8K OFDM) 858 32 2 × 0.9 - 70 > 14 > 26 ≤− 25 -
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 5 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor VDS = 32 V; f = 860 MHz; IDq = 2× 0.9 A; Th = 25°C. Fig 2. CW power gain Gp, drain efficiencyηD and power added efficiencyηadd as a function of output power PL; typical values VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq =2 × 0.9 A; Th = 25°C. VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq =2 × 0.9 A; Th = 25°C. Fig 3. 2-tone power gain Gp and intermodulation distortion IMD as a function of average output power P L(AV); typical values Fig 4. 2-tone power gain Gp, drain efficiencyηD and power added efficiencyηadd as a function of average output power PL(AV); typical values 001aad744 PL (W) 0 400 300100 200 G p (dB) h D , hadd (%) G p hadd hD 001aad745 PL(AV) (W) 0 250 200100 15050 G p (dB) -20 -40 -60 IMD (dBc) IMD5 IMD3 G p 001aad746 PL(AV) (W) 0 250 200100 15050 G p (dB) h D , hadd (%) G p hadd hD
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 6 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor IMD at±4.3 MHz from frequency center. V DS = 32 V; f = 858 MHz; IDq =2 × 0.9 A; Th =2 5°C. Fig 5. DVB-T (8K OFDM) power gain Gp and third order intermodulation distortion (high-frequency component IMD3 HI and low-frequency component IMD3LO ) as a function of average output power PL(AV); typical values Fig 6. DVB-T (8K OFDM) power gain Gp, drain efficiencyηD and power added efficiencyηadd as a function of average output power PL(AV); typical values 001aad748 PL(AV) (W) 0 160 12040 80 G p (dB) IMD (dBc) -10 -20 -30 -40 -50 IMD3 LO IMD3 HI G p 001aad747 PL(AV) (W) 0 160 12040 80 G p (dB) hD , hadd (%) G p hadd hD
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 7 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor
7.1 Broadband operation data
Measured in a common-source broadband (470 MHz to 860 MHz) test circuit.
7.2 Ruggedness in class-AB operation
The BLF872 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated power. Measured in a common-source broadband (470 MHz to 860 MHz) test circuit. VDS = 32 V; IDq = 2× 0.9 A; Th = 25°C. Black video signal, sync expansion: input sync = 33 %; output sync≥ 27 %. VDS = 32 V; IDq = 2× 0.9 A; Th = 25°C. Black video signal, sync expansion: input sync = 33 %; output sync≥ 27 %. Fig 7. Analog TV (black video signal) peak sync output power Po(sync)M and average output power PL(AV) as a function of frequency f Fig 8. Analog TV (black video signal) power gain Gp and drain efficiencyηD as a function of frequency f 001aad749 f (MHz) 400 900 800600 700500 100 200 300 P (W) Po(sync)M PL(AV) 001aad750 f (MHz) 400 900 800600 700500 G p (dB) hD (%) G p hD
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 8 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor
7.3 Reliability
- Test information TTF; 0.1 % failure fraction; best estimate values. (1) Tj = 100°C (2) Tj = 110°C (3) Tj = 120°C (4) Tj = 130°C (5) Tj = 140°C (6) Tj = 150°C (7) Tj = 160°C (8) Tj = 170°C (9) Tj = 180°C (10) Tj = 190°C (11) Tj = 200°C Fig 9. BLF872 electromigration (ID , total device) 001aad751 ID (A) 0 201681 24 104 102 103 106 105 107 Y ears (11)(10)(9)(8)(7) (6)(5)(4)(3)(2)(1) Table 8: List of components For test circuit, seeFigure10,11 and12. Component Description Value Remarks B1, B2 balun semi rigid coax 25 Ω EZ90-25-TP C1 multilayer ceramic chip capacitor 12 pF [1] C2 multilayer ceramic chip capacitor 10 pF [1] C3, C5 multilayer ceramic chip capacitor 5.6 pF [1] C4 multilayer ceramic chip capacitor 6.8 pF [1] C6, C7 multilayer ceramic chip capacitor 2.0 pF [2] C8 multilayer ceramic chip capacitor 18 pF [1] C9, C10 multilayer ceramic chip capacitor 0.5 pF [2] C11, C12 multilayer ceramic chip capacitor 100 pF [1] C13, C14 multilayer ceramic chip capacitor 100 pF [2]
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 9 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor [1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] PCB: Rogers 5880;ε r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35µm. C15, C16 ceramic capacitor 15 nF C17, C18 electrolytic capacitor 470 µF C20 multilayer ceramic chip capacitor 13 pF [3] C21 tekelec trimmer 0.6 pF to 4.5 pF C22 multilayer ceramic chip capacitor 3.9 pF [3] C23 multilayer ceramic chip capacitor 10 pF [3] C24, C32 multilayer ceramic chip capacitor 3.0 pF [3] C25 multilayer ceramic chip capacitor 30 pF [3] C26, C27 multilayer ceramic chip capacitor 100 pF [3] C28, C29 ceramic capacitor 15 nF C30, C31 electrolytic capacitor 10 µF L1 stripline L2 stripline [4] (W × L) 10 mm× 17.7 mm L3 stripline [4] (W × L) 5 mm× 16.5 mm L4 stripline [4] (W × L) 2.4 mm× 15 mm L5 stripline [4] (W × L) 3.5 mm× 43 mm L6 stripline [4] (W × L) 2 mm× 43.3 mm L10 stripline [4] (W × L) 24 mm× 10 mm L11 stripline [4] (W × L) 10 mm× 15 mm L12 stripline [4] (W × L) 3 mm× 31.5 mm L13 stripline [4] (W × L) 2 mm× 43.3 mm R1 resistor 5.6 Ω R2 resistor 5.6 Ω R3 resistor 100 Ω R4 resistor 100 Ω R5 potentiometer 2 k Ω R6 potentiometer 2 k Ω Table 8: List of components …continued For test circuit, seeFigure10,11 and12. Component Description Value Remarks
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 10 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor Fig 10. Class-AB common-source broadband test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages 001aad752 C28 C30 C25 C8 C26 L13 L13 L6 L12 L12 L11 L11 L10 L1 L10 C27 C24 C23 C1 C2 C3 C4 C5C22 C10 C20C21 C29
50 W 50 W
+VG1(test) +VG2(test) +VD1(test) +VD2(test) C16 C18C14
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 11 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor Fig 11. Printed-circuit board for class-AB broadband test circuit 001aad753 95 mm 80 mm 95 mm
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 12 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor Fig 12. Component layout for class-AB broadband test circuit 001aad833 BLF872 +VG1(test) +VD1(test) +VG2(test) +VD2(test) C16 C15 C14 C13 C5C4C3 C6 C11 C12 C1C20 C21 C22C23 C25 C24 C32 C27 C26 C31 C30 C29 C28 C10 C18 C17 L10 L10 L11 L11 L12 L13 B2 L13 L12 32 mm 32 mm broadband BLF872 input strip (+32 V supply) 15 mm 10 mm 3.5 mm1.5 mm 13.1 mm 15 mm + + + +
Philips Semiconductors BLF872 UHF power LDMOS transistor BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 13 of 16 9. Package outline Fig 13. Package outline SOT800-1 SOT800-1 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT800-1 05-06-02 05-06-07 Flanged LDMOST ceramic package; 2 mounting holes; 4 leads 0 5 10 mm scale 10.45 0.15 0.10 30.5 29.9 15.3 15.1 22.8 21.8 15.4 15.0 6.6 6.2 2.26 2.00 44.5 44.2 3.56 3.49 3.4 3.1 14.6 14.4 31.1 30.9 3.7 3.3 inches 0.0020.01 0.011.516 UNIT A D bc e U 2 yq w 2w 1F U 1pQE E1D 1 HL DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 0.50.415 0.411 0.006 0.004 1.201 1.177 1.224 1.216 0.602 0.594 0.898 0.858 0.606 0.591 0.260 0.244 0.089 0.079 1.752 1.740 0.140 0.137 0.134 0.122 0.575 0.567 0.146 0.130 y D F A D 1 Q c E B b q e H L U 2 P w1 AM M B M w2 CM M U 1 C A
BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 14 of 16 Philips Semiconductors BLF872 UHF power LDMOS transistor 10. Abbreviations 11. Revision history Table 9: Abbreviations Acronym Description CDMA Code Division Multiple Access CW Continuous Wave DVB Digital Video Broadcast EDGE Enhanced Data rates for GSM Evolution ESR Equivalent Series Resistance EVM Error Vector Magnitude GSM Global System for Mobile communications IMD InterModulation Distortion LDMOS Laterally Diffused Metal Oxide Semiconductor OFDM Orthogonal Frequency Division Multiplexing PCB Printed-Circuit Board PEP Peak Envelope Power RF Radio Frequency SMD Surface Mount Device TTF Time To Failure VSWR Voltage Standing Wave Ratio Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BLF872_1 20060220 Product data sheet - - -
Philips Semiconductors BLF872 UHF power LDMOS transistor BLF872_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 February 2006 15 of 16 12. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 February 2006 Document number: BLF872_1 Published in The Netherlands Philips Semiconductors BLF872 UHF power LDMOS transistor 17. Contents