BLF861A_2015 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of 2000 Aug 04

2001 Feb 09

UHF power LDMOS transistor M3D392

2001 Feb 09 2

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A

FEATURES

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Designed to withstand abrupt load mismatch errors
  • Source on underside eliminates DC isolators; reducing common mode inductance
  • Designed for broadband operation (UHF band)
  • Internal input and output matching for high gain and optimum broadband operation.

APPLICATIONS

  • Communication transmitter applications in the UHF frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. PINNING - SOT540A PIN DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source connected to flange Top view MBK777 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th =2 5°C in a common source 860 MHz test circuit. Note 1. Sync compression: input sync≥ 33%; output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) ΔG p (dB) CW, class-AB 860 32 150 >13.5 typ. 14.5 >50 ≤1 PAL BG (TV); class-AB 860 (ch 69) 32 >150 typ. 170 (peak sync) >14 >40 note 1 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage −± 15 V ID drain current (DC) − 18 A Ptot total power dissipation T mb ≤ 25 °C − 318 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C

2001 Feb 09 3

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A THERMAL CHARACTERISTICS CHARACTERISTICS Tj=2 5°C; per section; unless otherwise specified. Note 1. Capacitance values without internal matching. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base Tmb =2 5°C; Ptot= 318 W 0.55 K/W R th mb-h thermal resistance from mounting base to heatsink 0.2 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.5 mA 65 −− V VGSth gate-source threshold voltage VDS =1 0V ; ID = 150 mA 4 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS =3 2V −− 2.2 µA IDSX drain cut-off current V GS =V GSth +9V ; VDS =1 0V 1 8 −− A IGSS gate leakage current V GS = ±15 V; VDS =0 −− 25 nA gfs forward transconductance V DS =1 0V ; ID =4A − 4 − S R DSon drain-source on-state resistance VGS =V GSth +9V ; ID =4A − 160 − m Ω C iss input capacitance V GS = 0; VDS =3 2V ; f=1M H z(1) − 82 − pF C oss output capacitance V GS = 0; VDS =3 2V ; f=1M H z(1) − 40 − pF C rss feedback capacitance V GS = 0; VDS =3 2V ; f=1M H z(1) − 6 − pF handbook, halfpage 05 0 100 10 20 30 40 VDS (V) C oss (pF) MLD510 Fig.2 Output capacitance as a function of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz; Tj=2 5°C.

2001 Feb 09 4

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A

APPLICATION INFORMATION

RF performance in a common source 860 MHz test circuit. Th =2 5°C; Rth mb-h= 0.15 K/W; unless otherwise specified. Note 1. Sync compression: input sync≥ 33%; output sync 27% measured in an 860 MHz test circuit. Ruggedness in class-AB operation The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load mismatch errors under the nominal power condition. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) G p (dB) ηD (%) dIm (dBc) ΔG p (dB) CW; class-AB 860 32 1 150 >13.5 typ. 14.5 >50 −≤ 1 2-tone; class-AB f 1 = 860 f1 = 860.1 32 1 150 (PEP) >14 >40 ≤−25 − PAL BG (TV); class-AB 860 (ch 69) 32 1 > 150 typ. 170 (peak sync) >14 >40 − note 1 handbook, halfpage 400 900 500 xi ri zi (W ) f (MHz) 600 700 800 MCD871 Fig.3 Input impedance as a function of frequency (series components); typical push-pull values. CW, class-AB operation; VDS = 32 V; IDQ =1A ; PL = 170 W (total device); Th =2 5°C. handbook, halfpage 400 900 500 600 700 800 f (MHz) ZL (Ω ) MCD872 XL R L Fig.4 Load impedance as a function of frequency (series components); typical push-pull values. CW, class-AB operation; VDS = 32 V; IDQ =1A ; PL = 170 W (total device); Th =2 5°C.

2001 Feb 09 5

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A handbook, halfpage 0 100 PL (PEP) (W) G p (dB) 300 ηD (%) 200 MLD514 ηD G p Fig.5 Power gain and drain efficiency as functions of peak envelope load power; typical values. Th =2 5°C; VDS = 32 V; IDQ =1A . 2-tone: f1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB) measured in an 860 MHz test circuit. handbook, halfpage 0 100 PL (PEP) (W) dim (dBc) 300 −20 −60 −80 −40 200 MLD515 Fig.6 Intermodulation distortion as a function of peak envelope output power; typical values. Th =2 5°C; VDS = 32 V; IDQ =1A . 2-tone: f1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB) measured in an 860 MHz test circuit. handbook, halfpage 05 0 PL (W) G p (dB) 250 100 150 200 MLD516 ηD (%) ηD G p Fig.7 Power gain and drain efficiency as functions of load power; typical values. Th =2 5°C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 860 MHz; measured in an 860 MHz test circuit.

2001 Feb 09 6

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... handbook, full pagewidth R1C5 L10 L11 L12 L L14 50 Ω input C15L17 C11 C20 C22 C26 C25 C19 C18 L18 C21 C23 C24 C12 C13 L13 L15 L16 C14 C16 C17 C7C6 C10 50 Ω output +VS +Vbias MCD876 Fig.8 Class-AB common source broadband test circuit.

2001 Feb 09 7

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A List of components class-AB broadband test circuit(see Figs 8 and 9) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 multilayer ceramic chip capacitor; note 1 20 pF C2 multilayer ceramic chip capacitor; note 1 4.3 pF C3, C6, C9 tekelec trimmer 0.6 to 4.5 pF C4 multilayer ceramic chip capacitor; note 1 9.1 pF C5 multilayer ceramic chip capacitor; note 1 10 pF C7 multilayer ceramic chip capacitor; note 1 5.1 pF C8 multilayer ceramic chip capacitor; note 1 13 pF C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF C12, C13 multilayer ceramic chip capacitor; note 2 6.8 pF C14 multilayer ceramic chip capacitor; note 3 1 pF C15 multilayer ceramic chip capacitor; note 3 20 pF C16, C17 multilayer ceramic chip capacitor 1 nF C18 multilayer ceramic chip capacitor 100 nF C19, C26 multilayer ceramic chip capacitor 100 µF C20, C21, C22, C23 multilayer ceramic chip capacitor; note 2 100 pF C24 electrolytic capacitor 1000 µF C25 multilayer ceramic chip capacitor 1 µF 2222 595 16754 L1, L2 stripline; note 4 30.6 × 2.4 mm L3, L4 stripline; note 4 28 × 2.4 mm L5, L6 stripline; note 4 10 × 5m m L7, L8 stripline; note 4 20 × 10 mm L9, L10 stripline; note 4 5.5 × 15 mm L11, L12 stripline; note 4 10 × 10 mm L13, L14 stripline; note 4 15 × 5m m L15, L16 stripline; note 4 48.5 × 2.4 mm L17 stripline; note 4 10 × 2.4 mm L18 ferrite L19 wire inductor (hairpin) length = 17 mm B1 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5Ω 70 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω± 1.5Ω 48.5 mm

2001 Feb 09 8

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (ε r = 2.2); thickness 0.79 mm. R1 resistor 33 Ω R2 resistor 1 k Ω R3 resistor 100 k Ω R4 resistor 100 Ω R5, R6 SMD resistor 3.9 Ω COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

2001 Feb 09 9

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A handbook, full pagewidth 9595 +Vbias MCD877 C7C6 C17 C16 C5 C8 C10 C11 C12 C13 C15 C14 C26 L19 L18 C18 C19 C20 C21 C22 C23C25 C24 +VS BLF861 815 2.5 2.5 Fig.9 Printed-circuit board and component layout for class-AB broadband test circuit. Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.

2001 Feb 09 10

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A handbook, halfpage 400 900 500 G pG p (dB) f (MHz) 600 700 800 MLD511 hD (%) hD Fig.10 Power gain and drain efficiency as functions of frequency; typical values. Th =2 5°C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV); sync compression: input 33%, output 27%; measured in broadband test circuit. handbook, halfpage 400 900 250 100 150 200 500 600 700 800 f (MHz) Po sync (W) MLD512 Fig.11 Peak envelope sync power as a function of frequency; typical values. Th =2 5°C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV); sync compression: input 33%, output 27%; measured in broadband test circuit. handbook, halfpage 400 900 500 G pG p (dB) f (MHz) 600 700 800 MLD513 ηD (%) ηD Fig.12 Power gain and drain efficiency as functions of frequency; typical values. Th =2 5°C; VDS = 32 V; IDQ = 1 A; CW, class-AB operation; PL = 150 W; measured in broadband test circuit.

2001 Feb 09 11

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT540A 99-08-27 99-12-28 0 5 10 mm scale Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A p A F b e D U 2H Q c D 1 E A w 1 ABM M M q U 1 H 1 C B M Mw 2 C Mw 3 UNIT A mm Db 8.51 8.26 0.15 0.10 22.05 21.64 10.21 10.31 10.01 15.75 14.73 9.91 9.65 5.77 5.00 c e U 2 0.250.25 0.51 w 3 27.94 qw 2w 1F 1.78 1.52 U 1 34.16 33.91 H 1 18.72 18.47 p 3.38 3.12 Q 2.72 2.46 EE 1 10.26 10.06 inches 0.335 0.325 0.006 0.004 0.868 0.852 D 1 22.05 21.64 0.868 0.852 0.402 0.406 0.394 0.620 0.580 0.390 0.380 0.227 0.060 1.345 1.335 0.737 0.727 0.133 0.123 0.107 0.097 0.404 0.396 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

2001 Feb 09 12

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A DATA SHEET STATUS Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2001 Feb 09 13

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A NOTES

2001 Feb 09 14

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A NOTES

2001 Feb 09 15

Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A NOTES

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 2001 71 Philips Semiconductors – a worldwide company For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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