BLF548_2015

BLF548_2015 JMNIC | Alldatasheet

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Technical content

Product specification October 1992 DISCRETE SEMICONDUCTORS BLF548 UHF push-pull power MOS transistor

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548

FEATURES

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability
• Designed for broadband operation.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262A2 PIN DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. halfpage MSB008Top view MBB157 s QUICK REFERENCE DATA RF performance at Th = 25°C in a push-pull common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 500 28 150 > 10 > 50

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 15 A Ptot total power dissipation up to T mb = 25°C; total device; both sections equally loaded − 330 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base Tmb = 25°C; Ptot = 330 W; total device; both sections equally loaded

0.5 K/W

R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.15 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb = 25°C. Total device; both sections equally loaded. handbook, halfpage 11 0 MRA997 102 102 (1) ID (A) VDS (V) (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. handbook, halfpage 100 150 200 250 300 350 400 0 20 40 60 80 100 120 (2) (1) MRA532 Ptot (W) Th (oC)

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 CHARACTERISTICS (per section) Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 40 mA 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 0.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 160 mA; VDS = 10 V 2 − 4V gfs forward transconductance I D = 4.8 A; VDS = 10 V 2.4 3.5 − S R DS(on) drain-source on-state resistance ID = 4.8 A; VGS = 10 V − 0.25 0.3 Ω IDSX on-state drain current V GS = 15 V; VDS = 10 V 16 20 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 105 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 90 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 25 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. VDS = 10 V. handbook, halfpage −110−2 11 0 TC (mV/K) ID (A) MRA524 Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS = 10 V; Tj = 25°C. handbook, halfpage 0 4 8 12 16 MRA529 ID (A) VGS (V)

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values per section. ID = 4.8 A; VGS = 10 V. handbook, halfpage 0.1 0.2 0.3 0.4 0.5 0 40 80 120 MRA522 R DS(on) (Ω) Tj (oC) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values per section. handbook, halfpage 100 200 300 400 0 1 02 03 0 C (pF) VDS (V) C os C is MRA525 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. handbook, halfpage 100 01 0 2 0 3 0 VDS (V) C rs (pF) MRA521

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a common source, push-pull, class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G p (dB) ηD (%) CW, class-B 500 28 2 x 160 150 > 10 typ. 11 > 50 typ. 55 Ruggedness in class-B operation The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions: V DS = 28 V; f = 500 MHz at rated output power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 28 V; IDQ = 2× 160 mA; f = 500 MHz; ZL = 1.1+ j0.6Ω (per section). handbook, halfpage 100 0 50 100 150 200 G P G P (dB) MRA527 PL (W) ηD ηD (%) Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 28 V; IDQ = 2× 160 mA; f = 500 MHz; ZL = 1.1+ j0.6Ω (per section). handbook, halfpage 120 160 200 01 0 2 0 3 0 MRA531 PL (W) PIN (W)

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 List of components (see class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor (note 1) 22 pF C3 multilayer ceramic chip capacitor (note 1) 16 pF C4 film dielectric trimmer 2 to 9 pF 2222 809 09005 C5 multilayer ceramic chip capacitor (note 2) 27 pF C6, C21, C22 film dielectric trimmer 2 to 18 pF 2222 809 09006 C7, C10, C14, C15 multilayer ceramic chip capacitor (note 1) 390 pF C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C9 multilayer ceramic chip capacitor (note 3) 2 × 56 pF in series agewidth C23 C24 /#03/#01 50 Ω output 50 Ω input L24 L22 L23 /#02/, L1 C1 C5C4 C18 C21C19 C20 L13 L18 L9 L14 L19 MBC232 DUT L20 L21 C22 Vbias Vbias R1 R2 C8C7 C10 C11 R6R5 +VD +VD C12 C13 L11R7L10 C14 L12 L15C15 L16 L17 C16 C17 Fig.11 Test circuit for class-B operation. f = 500 MHz.

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 4. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 0.79 mm. 5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively. C13, C16 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C18 multilayer ceramic chip capacitor (note 2) 18 pF C19 multilayer ceramic chip capacitor (note 2) 12 pF C20 multilayer ceramic chip capacitor (note 2) 8.2 pF C23, C24 multilayer ceramic chip capacitor (note 1) 30 pF L1, L3, L22, L24 stripline (note 4) 34.5 Ω length 66.5 mm width 4 mm L2, L23 semi-rigid cable (note 5) 50 Ω length 66.5 mm width 3.6 mm L4, L5 stripline (note 4) 22.3 Ω length 35 mm width 7 mm L6, L7 stripline (note 4) 22.3 Ω length 10 mm width 7 mm L8, L9 stripline (note 4) 22.3 Ω length 5.5 mm width 7 mm L10, L11, L16, L17 grade 3B Ferroxcube wideband RF choke 4312 020 36642 L12, L15 1 turn enamelled 1.5 mm copper wire 17 nH length 5 mm int. dia. 9 mm leads 2× 5 mm L13, L14 stripline (note 4) 22.3 Ω length 15 mm width 7 mm L18, L19 stripline (note 4) 22.3 Ω length 36 mm width 7 mm L20, L21 stripline (note 4) 22.3 Ω length 8.5 mm width 7 mm R1, R5 0.4 W metal film resistor 24.7 k Ω 2322 151 72473 R2, R6 10 turn potentiometer 5 k Ω R3, R4 0.4 W metal film resistor 10.5 k Ω 2322 151 71053 R7, R8 1 W metal film resistor 10 Ω 2322 151 51009 COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 Fig.12 Component layout for 500 MHz class-B test circuit. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth MBC231 - 1 L1/L2 C6 C9 C10 C11 V DS V DS C20 C21 C18 C19 L15 L9 L14 L19 L21 L20 C22 L18 C23 C24 L22/L23 L24 L12 L8 L13 C15 C17 C16 L17 L16 L11 L10 C13 C12C14 handbook, full pagewidth MBC230 200 mm mm strap strap strap strap strap strap strap strap rivets rivets

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 Fig.13 Input impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). handbook, halfpage 50 150 250 350 450 550 f (MHz) Zi (Ω) ri xi MRA528 Fig.14 Load impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). handbook, halfpage 50 150 250 350 450 550 f (MHz) MRA530 ZL (Ω) R L XL Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency, typical values per section. Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). handbook, halfpage 50 150 250 350 450 550 f (MHz) G P (dB) MRA526

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT262A2 97-06-28 0 5 10 mm scale Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2 p A F b e D q U 1 H 1 U 2H Q c EE1 C A w 1 ABM B Mw 3 Mw 2 C UNIT A mm Db 5.85 5.58 0.16 0.10 21.98 21.71 11.05 10.29 10.03 20.58 20.06 9.91 9.65 5.39 4.62 c e U 2 0.250.51 1.02 w 3 27.94 qw 2w 1F 1.78 1.52 U 1 34.17 33.90 H 1 17.02 16.51 p 3.28 3.02 Q 2,47 2.20 EE 1 10.27 10.05 inches 0.230 0.220 0.006 0.004 0.865 0.855 0.435 0.405 0.396 0.81 0.79 0.390 0.380 0.212 0.060 1.345 1.335 0.67 0.65 0.129 0.119 0.097 0.087 0.404 0.395 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.