BLF542_15 JMNIC | Alldatasheet

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Technical content

Product specification October 1992 DISCRETE SEMICONDUCTORS BLF542 UHF power MOS transistor

Philips Semiconductors Product specification UHF power MOS transistor BLF542

FEATURES

  • High power gain
  • Easy power control
  • Gold metallization
  • Good thermal stability
  • Withstands full load mismatch
  • Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN DESCRIPTION 1 source 2 source 3 gate 4 drain 5 source 6 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. halfpage MBA931 - 1 Top view s d g MBB072 QUICK REFERENCE DATA RF performance at Tmb = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G P (dB) ηD (%) CW, class-B 500 28 5 > 13 > 50

Philips Semiconductors Product specification UHF power MOS transistor BLF542 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 1.5 A Ptot total power dissipation T mb =2 5°C − 20 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 8.8 K/W R th mb-h thermal resistance from mounting base to heatsink 0.4 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 102 MRA735 101 10−1 10−2 VDS (V) ID (A) (2)(1) Fig.3 Power derating curves. (1) Continuous operation. (2) Short time operation during mismatch. handbook, halfpage 10 30 50 70 90 110 130 (1) (2) Ptot (W) Th (oC) MRA734

Philips Semiconductors Product specification UHF power MOS transistor BLF542 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 0.1 mA; VGS =0 6 5 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 10 µA IGSS gate-source leakage current ±VGS = 20 V; VDS =0 −− 1 µA VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance I D = 0.3 A; VDS = 10 V 160 240 − mS R DS(on) drain-source on-resistance I D = 0.3 A; VGS = 15 V − 3.3 5 Ω IDSX on-state drain current V GS = 15 V; VDS = 10 V − 1.4 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 14 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 9.4 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V. handbook, halfpage 0 100 200 300 MBB777 ID (mA) T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V; Tj= 25°C. handbook, halfpage 1.5 0.5 51 0 1 5 MBB759 VGS (V) ID (A)

Philips Semiconductors Product specification UHF power MOS transistor BLF542 Fig.6 Drain-source on-resistance as a function of junction temperature, typical values. ID = 0.3 A; VGS = 15 V handbook, halfpage 50 100 150 MBB778 Tj (oC) R DS (on) (Ω ) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 10 20 30 MBB776 VDS (V) C (pF) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 10 20 30 MBB775 VDS (V) C rs (pF)

Philips Semiconductors Product specification UHF power MOS transistor BLF542 APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25°C unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) CW, class-B 500 28 50 5 > 13 typ. 16.5 > 50 typ. 59 Ruggedness in class-B operation The BLF542 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: V DS = 28 V; f = 500 MHz at rated output power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7+ j24.5Ω ; f = 500 MHz. handbook, halfpage 2468 1 00 PL (W) G p (dB) G p η (%) η MRA969 Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7 + j24.5Ω ; f = 500 MHz. handbook, halfpage 0 0.2 0.4 0.6 0.8 PL (W) PIN (W) MRA970

Philips Semiconductors Product specification UHF power MOS transistor BLF542 Fig.11 Test circuit for class-B operation. f = 500 MHz. handbook, full pagewidth MBB760 /#02/#02/#03/#03 input 50 Ω /,/,/#01/#01 /#02/#02/#03/#03 output 50 Ω VDD = + 28 V C1 L1 L2 L3 L4 R1C4C2 R2 R3 C10 C12 C13 C11C9 L6L5 L7 DUT

Philips Semiconductors Product specification UHF power MOS transistor BLF542 List of components (see test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board with PTFE fibre-glass dielectric (ε r = 2.2); thickness1⁄32 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C5, C13 multilayer ceramic chip capacitor (note 1) 390 pF C2, C4, C10, C12 film dielectric trimmer 2 to 18 pF 222 809 05217 C3, C9 multilayer ceramic chip capacitor (note 1) 39 pF C6 multilayer ceramic chip capacitor (note 2) 220 pF C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C8 electrolytic capacitor 63 V, 10 µF 2222 030 28109 C11 multilayer ceramic chip capacitor (note 1) 10 pF L1 stripline (note 3) 50 Ω 11 mm × 2.5 mm L2 stripline (note 3) 50 Ω 37 mm × 2.5 mm L3 stripline (note 3) 50 Ω 13 mm × 2.5 mm L4, L5 stripline (note 3) 42 Ω 3m m × 3 mm L6 stripline (note 3) 50 Ω 39 mm × 2.5 mm L7 stripline (note 3) 50 Ω 22 mm × 2.5 mm L8 8 turns 0.8 mm enamelled copper wire 250 nH length 9 mm int. dia. 6 mm leads 2× 5 mm L9 grade 3B Ferroxcube wideband RF choke 4312 020 36640 R1 metal film resistor 10 k Ω , 0.4 W 2322 151 71003 R2 10 turn potentiometer 50 k Ω R3 metal film resistor 205 k Ω , 0.4 W 2322 151 72054 R4 metal film resistor 10 Ω , 0.4 W 2322 151 71009

Philips Semiconductors Product specification UHF power MOS transistor BLF542 Fig.12 Component layout for 500 MHz test circuit. The components are mounted on one side of a copper-clad printed circuit board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown. handbook, full pagewidth MBB762 VG DV L5 L6 L7 C13C11 C12C10 L4L3 handbook, full pagewidth MBB761 rivet (12x) strap (8x) mounting screws (12x) 70 mm 150 mm

Philips Semiconductors Product specification UHF power MOS transistor BLF542 Fig.13 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. handbook, halfpage −10 −20 −30 −40 −50 100 200 300 400 500 f (MHz) MRA732 Zi (Ω ) xi ri Fig.14 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. handbook, halfpage 100 200 300 400 500 f (MHz) MRA733 R L XL ZL (Ω ) Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency, typical values. Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. handbook, halfpage 100 200 300 400 500 f MHz) gain (dB) MRA971

Philips Semiconductors Product specification UHF power MOS transistor BLF542 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT171A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT171A U 2 EE1H Q D D 1 A F c A b Mw 3 H 1 M Cw 2 e U 1 q p C w 1 ABM B UNIT A mm Db 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 D 1 9.30 8.99 E 5.95 5.74 3.58 11.31 10.54 6.00 5.70 6.81 6.07 c E1 U 2 0.260.51 1.02 w 3 18.42 qw 2w 1F 3.05 2.54 U 1 24.90 24.63 H 1 9.27 9.01 p 3.43 3.17 Q 4.32 4.11 e 6.00 5.70 inches 0.085 0.073 0.126 0.114 0.006 0.003 0.364 0.356 0.366 0.354 0.234 0.226 0.140 0.445 0.415 0.236 0.224 0.268 0.100 0.980 0.970 0.365 0.355 0.135 0.125 0.170 0.162 0.236 0.224 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power MOS transistor BLF542 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.