BLF521

BLF521_15 JMNIC | Alldatasheet

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Technical content

Product specification November 1992 DISCRETE SEMICONDUCTORS BLF521 UHF power MOS transistor

Philips Semiconductors Product specification UHF power MOS transistor BLF521

FEATURES

• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT172D PIN DESCRIPTION 1 source 2 gate 3 drain 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. ook, halfpage MSB007Top view s d g MBB072 QUICK REFERENCE DATA RF performance at Tamb = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 500 12.5 2 > 10 > 50

Philips Semiconductors Product specification UHF power MOS transistor BLF521 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Mounted on printed circuit board, see Fig.12. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V ±VGS gate-source voltage − 20 V ID DC drain current − 1A Ptot total power dissipation up to T mb =2 5°C − 10 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 17.5 K/W R th j-a thermal resistance from junction to ambient (note 1) 75 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 0.1 1 10 100 (1) ID (A) VDS (V) MRA989 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 0 40 80 160 120 MDA486 (1) (2) Ptot (W) Tmb ( °C)

Philips Semiconductors Product specification UHF power MOS transistor BLF521 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 3 mA 40 −− V IDSS drain-source leakage current V GS = 0; VDS = 12.5 V −− 10 µA IGSS gate-source leakage current ±VGS = 20 V; VDS =0 −− 1 µA VGS(th) gate-source threshold voltage I D = 3 mA; VDS =1 0V 2 − 4.5 V gfs forward transconductance I D = 0.3 A; VDS = 10 V 80 135 − mS R DS(on) drain-source on-state resistance ID = 0.3 A; VGS =1 5V − 3.5 4 Ω IDSX on-state drain current V GS = 15 V; VDS =1 0V − 1.3 − A C is input capacitance V GS =0 ;VDS = 12.5 V; f = 1 MHz− 5.3 − pF C os output capacitance V GS =0 ;VDS = 12.5 V; f = 1 MHz− 7.8 − pF C rs feedback capacitance V GS =0 ;VDS = 12.5 V; f = 1 MHz− 1.8 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS =1 0V . handbook, halfpage15 MDA485

1 ID (A)

T.C (mV/K) 10 10 2 103 Fig.5 Drain current as a function of gate-source voltage, typical values. VDS =1 0V;Tj=2 5°C. handbook, halfpage 04 2 0 1600 1200 400 800 81 21 6 MDA484 ID (mA) VGS (V)

Philips Semiconductors Product specification UHF power MOS transistor BLF521 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 0.3 A; VGS =1 5V . handbook, halfpage 04 0 8 0 R DSon (Ω ) Tj (°C) 160 120 MDA483 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage C os C is VDS (V) C (pF) 81 6 12 MDA482 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 048 C rs (pF) VDS (V) MDA481

Philips Semiconductors Product specification UHF power MOS transistor BLF521 APPLICATION INFORMATION FOR CLASS-B OPERATION Tamb =2 5°C; RGS = 274Ω , unless otherwise specified. RF performance in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) CW, class-B 500 12.5 10 2 > 10 typ. 13 > 50 typ. 60 Ruggedness in class-B operation The BLF521 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: V DS = 15.5 V; f = 500 MHz at rated output power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; ZL = 9.5+ j12.8; f = 500 MHz. handbook, halfpage 0.5 1.5 PL (W) G p (dB) 2.5 3.5 100 MDA480 G p ηD (%) ηD Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 20 mA; ZL = 9.5+ j12.8; f = 175 MHz. handbook, halfpage 0 0.2 1.0 0.4 0.6 0.8 MDA479 PL (W) PIN (W)

Philips Semiconductors Product specification UHF power MOS transistor BLF521 Fig.11 Test circuit for class-B operation. f = 500 MHz. handbook, full pagewidth MDA475 D.U.T. C12 L1 L2 L3C1 L5 L8 L10 L9 L6R1 R6 C11 C15 50 Ω output50 Ω input +VD C8C5 R4 R5 R3 C9 C10 C14C13BLF521 /,/,/,/,/,

Philips Semiconductors Product specification UHF power MOS transistor BLF521 List of components (class-AB test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C5, C8, C15 multilayer ceramic chip capacitor (note 1) 390 pF, 500 V C2, C13 film dielectric trimmer 2 to 9 pF 2222 809 09002 C3 multilayer ceramic chip capacitor (note 2) 5.6 pF, 500 V C4 film dielectric trimmer 2 to 18 pF 2222 809 09003 C6, C11 multilayer ceramic chip capacitor 2 × 100 nF in parallel, 50 V 2222 852 47104 C7, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C10 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C12 multilayer ceramic chip capacitor (note 2) 9.1 pF, 50 V C14 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 L1 stripline (note 3) 83 Ω 20 × 2m m L2 stripline (note 3) 83 Ω 21 × 2m m L3 stripline (note 3) 83 Ω 19 × 2m m L4, L5 stripline (note 3) 67 Ω 12 × 3m m L6 5 turns enamelled 0.5 mm copper wire 62 nH length 3.75 mm int. dia. 3 mm leads 2× 4m m L7 grade 3B Ferroxcube RF choke 4312 020 36642 L8 stripline (note 3) 83 Ω 18.6× 2m m L9 stripline (note 3) 83 Ω 31.6× 2m m L10 stripline (note 3) 83 Ω 2 × 2m m R1 0.4 W metal film resistor 274 Ω 2322 151 72741 R2 0.4 W metal film resistor 1.96 k Ω 2322 151 71962 R3 0.4 W metal film resistor 1 M Ω 2322 151 71005 R4 cermet potentiometer 5 k Ω R5 0.4 W metal film resistor 7.5 k Ω 2322 151 77502 R6 1 W metal film resistor 10 Ω 2322 153 51009

Philips Semiconductors Product specification UHF power MOS transistor BLF521 Fig.12 Component layout for 500 MHz test circuit. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth MBA381 +VDSR4 R2 C5 L4 L5 R6 L7 C10 C11 C13 C12 L10 C14 C15 handbook, full pagewidth MBA380 150 mm mm strap rivets rivets rivets strap strap strap mounting screws (6x)

Philips Semiconductors Product specification UHF power MOS transistor BLF521 Fig.13 Input impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; R GS = 274Ω ;PL =2W . handbook, halfpage 100 −50 −100 200 xi ri f (MHz) Zi (Ω ) 300 500 400 MDA478 Fig.14 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; R GS = 274Ω ;PL =2W . handbook, halfpage 100 200 300 ZL (Ω ) f (MHz) 500 400 MDA477 XL R L Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency, typical values. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; R GS = 274Ω ;PL =2W . handbook, halfpage 100 200 300 G p (dB) f (MHz) 500 400 MDA476

Philips Semiconductors Product specification UHF power MOS transistor BLF521 Common emitter S-parameters Measured at VDS = 12.5 V and ID = 100 mA. Measured at VDS = 12.5 V and ID = 150 mA. f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg)

Philips Semiconductors Product specification UHF power MOS transistor BLF521 Measured at VDS = 12.5 V and ID = 200 mA. Measured at VDS = 12.5 V and ID = 250 mA. f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg)

Philips Semiconductors Product specification UHF power MOS transistor BLF521 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT172D 97-06-28 H b H 0 5 10 mm scale Q A D D 1 c Studless ceramic package; 4 leads SOT172D UNIT A mm Db 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 1.15 0.88 3.71 2.89 c D 1 H 26.17 24.63 inches 0.13 0.12 0.035 0.025 0.006 0.004 0.205 0.195 0.210 0.200 0.045 0.035 0.146 0.114 1.03 0.97 Q DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power MOS transistor BLF521 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.