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Product speciﬁcation Supersedes data of 1997 Oct 28

1998 Jan 29

1998 Jan 29 2

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404

FEATURES

High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch
Designed for broadband operation.

APPLICATIONS

Communication transmitters in the VHF/UHF range with a nominal supply voltage of 12.5 V.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap. PINNING PIN DESCRIPTION 1, 8 source 2, 3 gate 4, 5 source 6, 7 drain Fig.1 Simplified outline SOT409A. handbook, halfpage MBK150Top view QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW class-AB 500 12.5 4 ≥10 ≥50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

1998 Jan 29 3

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V VGS gate-source voltage −± 20 V ID DC drain current − 1.5 A Ptot total power dissipation T mb ≤ 85 °C − 8.3 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C Fig.2 DC SOAR. (1) Current in this area may be limited by RDSon . (2) Tmb =8 5°C. handbook, halfpage MGM522 10−1 11 0 1 0 2 VDS (V) ID (A) (2)(1) THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base Tmb ≤ 85 °C, Ptot= 8.3 W 12.1 K/W

1998 Jan 29 4

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 5 mA 40 −− V VGS(th) gate-source threshold voltage ID = 50 mA; VDS =1 0V 2 − 4.5 V IDSS drain-source leakage current VGS = 0; VDS = 12.5 V −− 0.5 mA IGSS gate-source leakage current VDS = 0; VGS = ±20 V −− 1 µA IDSX on-state drain current V GS = 15 V; VDS =1 0V − 2.3 − A R DSon drain-source on-state resistance ID = 0.7 A; VGS =1 5V − 1.8 2.7 Ω gfs forward transconductance I D = 0.7 A; VDS = 10 V 200 270 − mS C is input capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 14 − pF C os output capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 17 − pF C rs feedback capacitance V GS = 0; VDS = 12.5 V; f = 1 MHz− 3 − pF Fig.3 Temperature coefficient of gate-source voltage as a function of drain current; typical values. VDS =1 0V . handbook, halfpage T.C. (mV/K) 10 10 2 103 104 MRA254 ID (mA) Fig.4 Drain current as a function of gate-source voltage; typical values. VDS = 10 V; Tj=2 5°C. handbook, halfpage 4 8 12 16 20 MRA249 ID (A) VGS (V)

1998 Jan 29 5

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 Fig.5 Drain-source on-state resistance as a function of junction temperature; typical values. ID = 0.7 A; VGS =1 5V . handbook, halfpage 0 50 100 Tj ( oC) 150 MRA253 R DSon (Ω ) Fig.6 Input and output capacitance as functions of drain-source voltage; typical values. VGS = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 0 4 8 12 16 C (pF) MRA246 VDS (V) C is C os Fig.7 Feedback capacitance as a function of drain-source voltage; typical values. VGS = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 048 1 2 1 6 MRA256 VDS (V) C rs (pF)

1998 Jan 29 6

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404

APPLICATION INFORMATION

RF performance at Tmb ≤ 60 °C in a common source test circuit with the device soldered on a printed-circuit board with through metallized holes. Ruggedness in class-AB operation The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: f = 500 MHz; VDS = 12.5 V; PL = 4 W; Tmb ≤ 60 °C. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) G p (dB) ηD (%) CW, class-AB 500 12.5 50 4 ≥10 ≥50 typ. 11.5 typ. 55 Fig.8 Power gain and drain efficiency as functions of load power; typical values. CW, class-AB operation; f = 500 MHz; VDS = 12.5 V; IDQ = 50 mA; Tmb ≤ 60 °C. handbook, halfpage 0246 MGM520 PL (W) G p (dB) G p ηD (%) ηD 100 CW, class-AB operation; f = 500 MHz; VDS = 12.5 V; IDQ = 50 mA; Tmb ≤ 60 °C. Fig.9 Load power as a function of drive power; typical values. handbook, halfpage 600 MGM521 200 400 PL (W) PD (mW)

1998 Jan 29 7

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 Test circuit information Fig.10 Class-AB common source test circuit at f = 500 MHz. handbook, full pagewidth MGM523 input 50 Ω output 50 Ω C2 R5 C9 C13C12 +VD L10 L11 L6 L7 C11 C10 L4L8 L9 DUT R4 L1

1998 Jan 29 8

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 List of components used in test circuit(see Figs 10 and 11). Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed circuit board, with DUROID dielectric (ε r = 2.2); thickness 0.79 mm, thickness of the copper sheet 2 x 35µm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1 electrolytic capacitor 4.7 µF, 10 V C2, C3 multilayer ceramic chip capacitor 47 nF C4 multilayer ceramic chip capacitor; note 1 18 pF C5, C10 multilayer ceramic chip capacitor; note 1 180 pF C6, C11 multilayer ceramic chip capacitor; note 1 270 pF C7 multilayer ceramic chip capacitor; note 1 22 pF C8 multilayer ceramic chip capacitor; note 1 8.2 pF C9 multilayer ceramic chip capacitor; note 1 2.7 pF C12 multilayer ceramic chip capacitor; note 1 1.2 pF C13 multilayer ceramic chip capacitor; note 1 12 pF L1 2 turns 1 mm enamelled copper wire on a grade 4B1 Ferroxcube core ext. dia. = 4.2 mm int. dia.=2m m length = 6 mm L2 3 turns 1 mm enamelled copper wire int. dia. = 4.6 mm leads =2x5m m L3 biﬁlar coil lead dia. = 0.8 mm L4 biﬁlar coil lead dia. = 1 mm L5 stripline; note 2 50 Ω 8.8× 2.38 mm L6 stripline; note 2 50 Ω 5.8× 2.38 mm L7 stripline; note 2 50 Ω 6.8× 2.38 mm L8 stripline; note 2 50 Ω 3.76× 2.38 mm L9 stripline; note 2 50 Ω 5.8× 2.38 mm L10 stripline; note 2 50 Ω 4.48× 2.38 mm L11 stripline; note 2 50 Ω 3.13× 2.38 mm R1, R2 SMD resistor 3.9 k Ω R3 metal ﬁlm resistor 1 k Ω , 0.25 W R4 metal ﬁlm resistor 22 Ω , 0.25 W R5 metal ﬁlm resistor 10 k Ω , 0.25 W R6 potentiometer 10 k Ω

1998 Jan 29 9

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 Fig.11 Printed-circuit board and component layout for 500 MHz class-AB test circuit in Fig.10. The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Dimensions in mm. handbook, full pagewidth MGM524 C13 C10 C11 C7 C8 C9 C12 BLF404 3 1 +VD C3R4 L3 L4 L5 L6 L8 L7 L9 L10 L11

1998 Jan 29 10

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 Fig.12 Input impedance as a function of frequency (series components); typical values. CW, class-AB operation; VDS = 12.5 V; ID = 50 mA; PL = 4 W; Tmb ≤ 60 °C. handbook, halfpage 0 200 400 600 MGM517 f (MHz) ri (Ω ) −20 −60 −80 −40 xi (Ω )xi ri Fig.13 Load impedance as a function of frequency (series components); typical values. CW, class-AB operation; VDS = 12.5 V; ID = 50 mA; PL = 4 W; Tmb ≤ 60 °C. handbook, halfpage 0 200 400 600 MGM518 f (MHz) ZL (Ω ) R L XL Fig.14 Power gain as a function of frequency (series components); typical values. CW, class-AB operation; VDS = 12.5 V; IDQ =5 0m A ; PL = 4 W; Tmb ≤ 60 °C. handbook, halfpage 0 200 400 600 MGM519 f (MHz) G p (dB)

1998 Jan 29 11

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 MOUNTING RECOMMENDATIONS Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance R th(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. Fig.15 Reflow soldering footprint for SOT409A. Dimensions in mm. full pagewidth MGK390 1.87 (2×) 4.60 0.80 (2×) 0.60 (4×) 0.50 (12×) 1.00 (8×) 1.00 (9×) 3.607.38

1998 Jan 29 12

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT409A 0 2.5 5 mm scale A Q 1 L Ceramic surface mounted package; 8 leads SOT409A UNIT c bDE E2 HH 1 LQ 1 α α w 1 w 2 mm 0.23 0.18 0.58 0.43 4.93 4.01 5.94 5.03 D 2 5.16 5.00 4.14 3.99 e 1.27 4.39 4.24 7.47 7.26 0.25 7° 0°0.25 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) 1.02 0.51 0.10 0.00 A 2.36 2.06 inches 0.009 0.007 0.023 0.017 0.194 0.158 0.234 0.198 0.203 0.197 0.163 0.157 0.050 0.173 0.167 0.294 0.286 0.010 7° 0°0.0100.040 0.020 0.004 0.000 0.093 0.081 98-01-27 c H E A b H 1 D D 2 e Bw 2 w 1 B

1998 Jan 29 13

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the speciﬁcation.

1998 Jan 29 14

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 NOTES

1998 Jan 29 15

Philips Semiconductors Product speciﬁcation UHF power MOS transistor BLF404 NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Product Information

BLF404 specifications and overview.

Summary

UHF power MOS transistor

Description

UHF power MOS transistor

Source title BLF404_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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