BLF368

BLF368_15 JMNIC | Alldatasheet

Document overview

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Technical content

Product specification Supersedes data of September 1992

1998 Jul 29

1998 Jul 29 2

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368

FEATURES

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262A1 PIN DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source PIN CONFIGURATION CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. ndbook, halfpage MSB008Top view MBB157 s QUICK REFERENCE DATA RF performance at Th =2 5°C in a push-pull common source test circuit. Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ΔG p (dB) (note1) ηD (%) CW, class-AB 225 32 300 >12 >1 >55

1998 Jul 29 3

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor sectionunless otherwise specified VDSS drain-source voltage − 65 V VGSS gate-source voltage −± 20 V ID drain current (DC) − 25 A Ptot total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded− 500 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded

0.35 K/W

R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded

0.15 K/W

Fig.2 DC SOAR. (1) Current in this area may be limited by RDSon . (2) Tmb =2 5°C. Total device; both sections equally loaded. handbook, halfpage 102 11 0 VDS (V) ID (A) 102 (1) MRA933 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. handbook, halfpage 0 40 80 160 500 400 MGE616 120 300 200 100 Ptot (W) Th (°C) (2) (1)

1998 Jul 29 4

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 100 mA 65 −− V IDSS drain-source leakage current VGS = 0; VDS =3 2V −− 5m A IGSS gate-source leakage current V GS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage ID = 100 mA; VDS =1 0V 2 − 4.5 V ΔVGS gate-source voltage difference of both transistor sections ID = 100 mA; VDS =1 0V −− 100 mV gfs forward transconductance I D = 8 A; VDS = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 8 A; VDS = 10 V 0.9 − 1.1 R DSon drain-source on-state resistance ID = 8 A; VDS =1 0V − 0.1 0.15 Ω IDSX on-state drain current V GS = 10 V; VDS =1 0V − 37 − A C is input capacitance V GS = 0; VDS =3 2V ; f=1M H z − 495 − pF C os output capacitance V GS = 0; VDS =3 2V ; f=1M H z − 340 − pF C rs feedback capacitance V GS = 0; VDS =3 2V ; f=1M H z − 40 − pF C d-f drain-flange capacitance − 5.4 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. VDS =1 0V . handbook, halfpage0 MGP229 10−1 11 0 ID (A) T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage; typical values per section. VDS = 10 V; Tj=2 5°C. handbook, halfpage 0 5 10 20 MGP230 ID (A) VGS (V)

1998 Jul 29 5

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values per section. VGS = 10 V; ID =8A . handbook, halfpage 0 50 100 150 200 150 100 MGP231 Tj (°C) R DSon (mΩ ) Fig.7 Input and output capacitance as functions of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 1500 500 1000 MGP234 C (pF) VDS (V) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 600 200 400 MGP232 C rs (pF) VDS (V)

1998 Jul 29 6

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th =2 5°C; Rth mb-h= 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source class-AB circuit. RGS = 536Ω per section; optimum load impedance per section = 1.34+ j0.34Ω ; VDS =3 2V . Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system). Ruggedness in class-AB operation The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated output power. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G p (dB) ΔG p (dB) (note1) ηD (%) CW, class-AB 225 32 2 × 250 300 >12 >1 >55 225 28 2 × 250 300 typ. 13 typ. 0.7 typ. 68 225 35 2 × 250 300 typ. 14 typ. 0.2 typ. 60 175 28 2 × 250 300 typ. 15 typ. 0.5 typ. 70

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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 Fig.9 Power gain as a function of load power; typical values per section. Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA; ZL = 1.34+ j0.34Ω (per section); RGS = 536Ω (per section); f = 225 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage 0 500 100 200 300 400 MGP239 G p (dB) PL (W) Fig.10 Efficiency as a function of load power; typical values per section. Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA; ZL = 1.34+ j0.34Ω (per section); RGS = 536Ω (per section); f = 225 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage 0 100 500 200 300 400 MGP241 ηD (%) PL (W) Fig.11 Load power as a function of input power; typical values per section. Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA; ZL = 1.34+ j0.34Ω (per section); RGS = 536Ω (per section); f = 225 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage 01 0 2 0 3 0 500 400 300 200 100 MGP240 PL (W) PIN (W)

1998 Jul 29 8

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... ndbook, full pagewidth C19 C14 C10 C11 C31C32 C33 C34 IC1 R2 R7 A C15 C20 C21 L15 C29 L22 L24 L23 C30 L21 L20L18 L19 L12 C4 C5 L6L4 50 Ω input D.U.T. C13 C12 C18 C16 L13 L10 L16 L17 C25 C17 VDD1 C23C22 C24 C27 C28 50 Ω output MGP211 C26 L11 L14 A VDD1 VDD2 Fig.12 Test circuit for class-AB operation. f = 225 MHz.

1998 Jul 29 9

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 List of components class-AB test circuit(see Figs 12 and 13) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2 multilayer ceramic chip capacitor (note 1) 2 × 56 pF in parallel+ 18 pF, 500 V C3 film dielectric trimmer 2 to 9 pF 2222 809 09005 C4 multilayer ceramic chip capacitor (note 1) 47 pF, 500 V C5 film dielectric trimmer 5 to 60 pF 2222 809 08003 C6, C7, C9, C10, C12, C15, C31, C34 multilayer ceramic chip capacitor (note 1) 1 nF, 500 V 2222 852 47104 C8, C11, C16, C21, C32 multilayer ceramic chip capacitor (note 1) 100 nF, 50 V C17, C20, C33 electrolytic capacitor 10 µF, 63 V C22 multilayer ceramic chip capacitor (note 1) 82 pF, 500 V C23 multilayer ceramic chip capacitor (note 1) 10 pF+ 30 pF in parallel, 500 V C24, C28 film dielectric trimmer 2 to 18 pF 2222 809 09006 C25, C26 multilayer ceramic chip capacitor (note 1) 39 pF+ 47 pF in parallel, 500 V C27 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V C29, C30 multilayer ceramic chip capacitor (note 1) 3 × 100 pF in parallel, 500 V L1, L3, L22, L24 stripline (note 2) 50 Ω 4.8× 80 mm L2, L23 semi-rigid cable (note 3) 50 Ω ext. conductor length 80 mm ext. dia 3.6 mm L4, L5 stripline (note 2) 43 Ω 6 × 32.5 mm L6, L7 stripline (note 2) 43 Ω 6 × 10.5 mm L8, L9 stripline (note 2) 43 Ω 6 × 3m m L10, L11 stripline (note 2) 43 Ω 6 × 10.5 mm L12, L15 grade 3B Ferroxcube wideband HF choke 2 in parallel 4312 020 36642 L13, L14 2 turns enamelled 1.6 mm copper wire 25 nH space 2.5 mm int. dia. 5 mm leads 2× 7m m L16, L17 stripline (notes 2 and 4) 43 Ω 6 × 3m m L18, L19 stripline (notes 2 and 4) 43 Ω 6 × 35 mm L20, L21 stripline (notes 2 and 4) 43 Ω 6 × 9m m R1, R6 10 turns potentiometer 50 k Ω R2, R5 metal film resistor 0.4 W, 1 k Ω R3, R4 metal film resistor 0.4 W, 536 Ω

1998 Jul 29 10

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 - L11, L16 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (ε r = 2.2); thickness1⁄16 inch; thickness of copper sheet 2× 35 µm. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 - L21 to avoid overheating by large RF currents. R7, R8 metal film resistor 1 W, ±5%, 10Ω R9 metal film resistor 1 W, 3.16 k Ω IC1 voltage regulator 78L05 COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

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Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 Fig.13 Component layout for 225 MHz class-AB test circuit. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Dimensions in mm. handbook, full pagewidth 130 MGP213 C18 C13 L12 L12 C12 C16 C17 +VDD1L13 hollow rivet C25 C23 C24 L18 L19 C27 L20 C28 L21 C30C26 L17 L16 L10 L11 C22 L14 C19 C14 C15 C21 C20 copper strap L23 L24 hollow rivets L15 L15 +VDD2 L22 C29 +VDD1 IC1 to R1, R6 C31 C32 C33 slider R1 C10 C11 C34 slider R6L3 hollow rivets copper strap 119 100

1998 Jul 29 12

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 Fig.14 Input impedance as a function of frequency (series components); typical values per section. Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA; R GS = 536Ω (per section); PL = 300 W. handbook, halfpage 150 250 200 MGP242 f (MHz) Zi (Ω ) xi ri Fig.15 Load impedance as a function of frequency (series components); typical values per section. Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA; R GS = 536Ω (per section); PL = 300 W. handbook, halfpage 150 250 MGP243 200 f (MHz) ZL (Ω ) R L XL Fig.16 Power gain as a function of frequency; typical values per section. Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA; R GS = 536Ω (per section); PL = 300 W. handbook, halfpage 150 250 200 MGP244 G p (dB) f (MHz)

1998 Jul 29 13

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT262A1 97-06-28 0 5 10 mm scale Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 p A F b e D q U 1 H 1 U 2H Q c EE1 C A w 1 ABM B Mw 3 Mw 2 C UNIT A mm Db 5.85 5.58 0.16 0.10 21.98 21.71 11.05 10.29 10.03 20.58 20.06 9.91 9.65 5.77 5.00 c e U 2 0.250.51 1.02 w 3 27.94 qw 2w 1F 1.78 1.52 U 1 34.17 33.90 H 1 17.02 16.51 p 3.28 3.02 Q 2.85 2.59 EE 1 10.27 10.05 inches 0.230 0.220 0.006 0.004 0.865 0.855 0.435 0.405 0.395 0.81 0.79 0.390 0.380 0.227 0.060 1.345 1.335 0.67 0.65 0.129 0.119 0.112 0.102 0.404 0.396 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

1998 Jul 29 14

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Jul 29 15

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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