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BLF346_15 JMNIC | Alldatasheet

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Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 16

Technical content

Product speciﬁcation Supersedes data of September 1992

1996 Oct 02

1996 Oct 02 2

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346

FEATURES

High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.

APPLICATIONS

Linear amplifier applications in Television transmitters and transposers.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 ﬂange package, with a ceramic cap. All leads are isolated from the ﬂange. A marking code, showing gate-source voltage GS ) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING-SOT119 PIN SYMBOL DESCRIPTION 1 s source 2 s source 3 g gate 4 d drain 5 s source 6 s source Fig.1 Simplified outline and symbol. handbook, halfpage s d g MAM268 QUICK REFERENCE DATA RF performance in a linear ampliﬁer. Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak synchronization level. MODE OF OPERATION f (MHz) VDS (V) ID (A) Th (°C) PL (W) G P (dB) dim (dB)(1) Class-A 224.25 28 3 70 >24 >14 −52 25 typ. 30 typ. 16.5 −52 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1996 Oct 02 3

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS drain-source voltage − 65 V VGSS gate-source voltage −± 20 V ID DC drain current − 13 A Ptot total power dissipation up to T mb =2 5°C − 130 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base Tmb =2 5°C; Ptot= 130 W 1.35 K/W R th mb-h thermal resistance from mounting base to heatsink Tmb =2 5°C; Ptot= 130 W 0.2 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDSon. (2) Tmb =2 5°C. handbook, halfpage 10−1 102 11 0 (1) ID (A) VDS (V) MRA931 (2) Fig.3 Power derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 0 50 100 150 200 150 100 MGG104 Ptot (W) Th (°C) (1) (2)

1996 Oct 02 4

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID =5 0m A 6 5 −− V IDSS drain-source leakage current VGS = 0; VDS =2 8V −− 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage VDS =1 0V ; ID =5 0m A 2 − 4.5 V ΔVGS gate-source voltage difference of matched pairs VDS =1 0V ; ID =5 0m A −− 100 mV gfs forward transconductance V DS =1 0V ; ID =5A 3 4 . 2 − S R DSon drain-source on-state resistance VGS = 10 V; ID =5A − 0.2 0.3 Ω IDSX on-state drain current V GS = 10 V; VDS =1 0V − 22 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 225 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 180 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 25 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. VDS =1 0V . handbook, halfpage2 MGG105 10−2 10−1 11 0 T.C. (mV/K) ID (A) Fig.5 Drain current as a function of gate-source voltage; typical values. VDS = 10 V; Tj=2 5°C. handbook, halfpage 0 5 10 20 MGG106 VGS (V) ID (A)

1996 Oct 02 5

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. ID = 5 A; VGS =1 0V . handbook, halfpage 340 280 220 160 30 150 MGG107 60 90 120 R DS on (mΩ ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage; typical values. VGS = 0; f = 1 MHz. 200 400 600 800 01 0 2 0 3 0 4 0 C (pF) C is C os (V)VDS MRA930 Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 300 100 200 MGG108 VDS (V) C rs (pF)

1996 Oct 02 6

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346

APPLICATION INFORMATION

RF performance in a linear ampliﬁer (common source class-A circuit). R th mb-h= 0.2 K/W; ZL = 1.1 + j0.2Ω unless otherwise speciﬁed. Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 225 MHz at rated output power. MODE OF OPERATION f (MHz) VDS (V) ID (A) Th (°C) Po sync (W) G P (dB) dim (dB)(1) Class-A 224.25 28 3 70 > 24 > 14 −52 25 typ. 30 typ. 16.5 −52 70 typ. 20 typ. 14.5 −55 25 typ. 22 typ. 15 −55 Fig.9 Intermodulation distortion as a function of peak synchronized output power. handbook, halfpage 0 1 02 03 04 0 −50 −70 −55 MGG109 −65 −60 dim (dB) Po sync (W) (1) (2) (1) Th =7 0°C. (2) Th =2 5°C.

1996 Oct 02 7

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 Fig.10 Test circuit for class-A operation at f = 225 MHz. handbook, full pagewidth MGG113 DUT C13 C12 C11 C15 C14C10 L4 L7 L2 L3 C4C2 BLF346 50 Ω output C16 50 Ω input L1 L5 VDSVB

1996 Oct 02 8

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 List of components (see Figs 10 and 11). Notes 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board with epoxy fibre-glass dielectric (ε r = 4.5); thickness 1⁄16 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 ﬁlm dielectric trimmer 2 to 18 pF 2222 809 09003 C2 multilayer ceramic chip capacitor (note 1) 10 pF, 500 V C3, C15, C16 ﬁlm dielectric trimmer 4 to 40 pF 2222 809 08002 C4, C5 multilayer ceramic chip capacitor (note 1) 56 pF, 500 V C6, C12 multilayer ceramic chip capacitor (note 1) 680 pF, 500 V C7, C8, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C10, C11 multilayer ceramic chip capacitor (note 1) 43 pF, 500 V C13 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C14 multilayer ceramic chip capacitor (note 1) 27 pF, 500 V L1 4 turns enamelled 0.7 mm copper wire 42.4 nH length 4 mm; int. dia. 3 mm; leads 2× 5m m L2 stripline (note 2) 50 Ω length 49 mm; width 2.8 mm L3, L4 stripline (note 2) 31 Ω length 11.5 mm; width 6 mm L5 2 turns enamelled 1.5 mm copper wire 18.7 nH length 8 mm; int. dia. 4 mm; leads 2× 5m m L6 grade 3B Ferroxcube RF choke 4312 020 36642 L7 stripline (note 2) 31 Ω length 40 mm; width 6 mm L8 3 turns enamelled 1.5 mm copper wire 28.8 nH length 8 mm; int. dia. 4 mm; leads 2× 5m m R1 metal ﬁlm resistor 1 k Ω , 0.4 W 2322 151 71002 R2 metal ﬁlm resistor 100 k Ω , 0.4 W 2322 151 71004 R3 10 turns cermet potentiometer 100 Ω R4 metal ﬁlm resistor 316 k Ω , 0.4 W 2322 153 53161 R5 metal ﬁlm resistor 10 Ω , 0.4 W 2322 153 51009

1996 Oct 02 9

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 Fig.11 Component layout for 225 MHz class-A test circuit. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets. handbook, full pagewidth strap strap strap strap rivet rivet rivet rivet rivet rivet rivet rivet mounting screws (8×) L3 L4L1 L8L2 L7 C16 C15 C14 C5 C11 C10C4 R2 C8 C9 C12 C13 R3 +VDS 150 MGG114

1996 Oct 02 10

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 Fig.12 Input impedance as a function of frequency (series components); typical values. Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th =7 0°C. handbook, halfpage 160 180 200 220 240 MGG110 Zi (Ω ) ri xi f (MHz) Fig.13 Load impedance as a function of frequency (series components); typical values. Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th =7 0°C. handbook, halfpage 160 180 200 220 240 MGG111 ZL (Ω ) f (MHz) R L XL Fig.14 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.15 Power gain as a function of frequency; typical values. Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th =7 0°C. handbook, halfpage 160 180 200 220 240 MGG112 f (MHz) G p (dB)

1996 Oct 02 11

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 PACKAGE OUTLINE Fig.16 SOT119. Dimensions in mm. handbook, full pagewidth MBC877 0.14 max ceramic BeO metal 18.4225.2 max 12.2 4.50 4.05 7.5 max 2.5 5.5 5.0 6.48 12.96 3.35 3.04(2x) 3.8 min 5.7 5.3 5.7 5.3 min 6.35 22 max

1996 Oct 02 12

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the speciﬁcation.

1996 Oct 02 13

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 NOTES

1996 Oct 02 14

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 NOTES

1996 Oct 02 15

Philips Semiconductors Product speciﬁcation VHF power MOS transistor BLF346 NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1996 SCA51 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 926 5361, Fax. +7 095 564 8323 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Product Information

BLF346 specifications and overview.

Summary

VHF power MOS transistor

Description

VHF power MOS transistor

Source title BLF346_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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