BLF248

BLF248_15 JMNIC | Alldatasheet

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Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF248 VHF push-pull power MOS transistor

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248

FEATURES

• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262 A1 PIN DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. halfpage MSB008Top view MBB157 s QUICK REFERENCE DATA RF performance at Th = 25°C in a push-pull common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G P (dB) ηD (%) class-AB 225 28 300 > 10 > 55 175 28 300 typ. 13 typ. 67

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 25 A Ptot total power dissipation up to T mb = 25°C total device; both sections equally loaded − 500 W Tstg storage temperature −65 150 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded.

0.35 K/W

R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded.

0.15 K/W

Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb = 25°C. Total device; both sections equally loaded. handbook, halfpage 102 11 0 VDS (V) ID (A) 102 (1) MRA933 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. handbook, halfpage 0 50 100 150 600 200 400 MGP203 Th (°C) Ptot (W) (2) (1)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 CHARACTERISTICS (per section) Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 100 mA 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 5m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 100 mA; VDS = 10 V 2 − 4.5 V ΔVGS gate-source voltage difference of both transistor sections ID = 100 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 8 A; VDS = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 8 A; VDS = 10 V 0.9 − 1.1 R DS(on) drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 37 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 500 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 360 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 46 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. VDS = 10 V. handbook, halfpage0 MGP204 10−1 11 0 ID (A) T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage, typical values per section. VDS = 10 V; Tj=2 5°C. handbook, halfpage 0 5 10 20 MGP205 ID (A) VGS (V)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values per section. ID = 8 A; VGS = 10 V. handbook, halfpage 0 50 100 150 200 100 MGP206 R DS(on) (mΩ ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 1500 500 1000 MGP207 C (pF) C is C os VDS (V) Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 600 200 400 MGP208 C rs (pF) VDS (V)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25°C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a linear amplifier in a common source class-AB circuit. R GS = 536Ω per section; optimum load impedance per section = 0.79− j0.11Ω . MODE OF OPERATION f (MHz) VDS (V) PL (W) G P (dB) ηD (%) class-AB 225 28 300 > 10 typ. 11.5 > 55 typ. 65 175 28 300 typ. 13 typ. 67 Ruggedness in class-AB operation The BLF248 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: V DS = 28 V; f = 225 MHz at rated output power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 2× 250 mA; R GS = 536Ω (per section); ZL = 0.79− j0.11Ω (per section); f = 225 MHz. handbook, halfpage 0 100 200 400 MGP209 300 PL (W) G p (dB) G p ηD (%)ηD Th = 25 °C 25 °C 70 °C 70 °C Fig.10 Load power as a function of input power, typical values. Class-AB operation; VDS = 28 V; IDQ = 2× 250 mA; R GS = 536Ω (per section); ZL = 0.79− j0.11Ω (per section); f = 225 MHz. handbook, halfpage 01 0 2 0 4 0 400 300 100 200 MGP210 PL (W) PIN (W) Th = 25 °C 70 °C

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... dbook, full pagewidth C19 C14 C10 C11 C31C32 C33 C34 IC1 R2 R7 A C15 C20 C21 L15 C29 L22 L24 L23 C30 L21 L20L18 L19 L12 C4 C5 L6L4 50 Ω input D.U.T. C13 C12 C18 C16 L13 L10 L16 L17 C25 C17 VDD1 C23C22 C24 C27 C28 50 Ω output MGP211 C26 L11 L14 A VDD1 VDD2 Fig.11 Test circuit for class-AB operation. f = 225 MHz.

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 List of components (class-AB test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor (note 1) 2 × 56 pF + 18 pF in parallel, 500 V C3 film dielectric trimmer 2 to 9 pF 2222 809 09005 C4 multilayer ceramic chip capacitor (note 1) 47 pF, 500 V C5 film dielectric trimmer 5 to 60 pF 2222 809 08003 C6, C7, C9, C10, C12, C15, C31, C34 multilayer ceramic chip capacitor (note 1) 1 nF, 500 V C8, C11, C16, C21, C32 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C13, C14, C18, C19 multilayer ceramic chip capacitor (note 1) 510 pF, 500 V C17, C20, C33 electrolytic capacitor 10 µF, 63 V C22 multilayer ceramic chip capacitor (note 1) 82 pF, 500 V C23 multilayer ceramic chip capacitor (note 1) 10 pF+ 30 pF in parallel, 500 V C24, C28 film dielectric trimmer 2 to 18 pF 2222 809 09006 C25, C26 multilayer ceramic chip capacitor (note 1) 39 pF+ 47 pF in parallel, 500 V C27 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V C29, C30 multilayer ceramic chip capacitor (note 1) 3 × 100 pF in parallel, 500 V L1, L3, L22, L24 stripline (note 2) 50 Ω 4.8× 80 mm L2, L23 semi-rigid cable (note 3) 50 Ω ext. dia. 3.6 mm ext. conductor length 80 mm L4, L5 stripline (note 2) 43 Ω 6 × 32.5 mm L6, L7, L10, L11 stripline (note 2) 43 Ω 6 × 10.5 mm L8, L9 stripline (note 2) 43 Ω 6 × 3 mm L12, L15 grade 3B Ferroxcube wide-band HF choke 2 in parallel 4312 020 36642 L13, L14 2 turns enamelled 1.6 mm copper wire 25 nH int. dia. 5 mm leads 2× 7 mm space 2.5 mm L16, L17 stripline (notes 2 and 4) 43 Ω 6 × 3 mm L18, L19 stripline (notes 2 and 4) 43 Ω 6 × 35 mm L20, L21 stripline (notes 2 and 4) 43 Ω 6 × 9 mm R1, R6 10 turns potentiometer 50 k Ω R2, R5 0.4 W metal film resistor 1 k Ω

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. L1, L3 - L11, L16 - L22 and L24 are micro-striplines on a double copper-clad printed circuit board, with glass microfibre PTFE dielectric (ε r = 2.2), thickness1⁄16 inch, thickness of copper sheet 2× 35 µm. 3. L2 and L23 are soldered on striplines L1 and L24 respectively. 4. A copper strap, thickness 0.8 mm, is soldered on striplines L16 - L21. R3, R4 0.4 W metal film resistor 536 Ω R7, R8 1 W metal film resistor 10 Ω± 5% R9 1 W metal film resistor 3.16 k Ω IC1 78L05 voltage regulator COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 Fig.12 Component layout for 225 MHz class-AB test circuit. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets. Dimensions in mm. handbook, full pagewidth 130 MGP213 C18 C13 L12 L12 C12 C16 C17 +VDD1L13 hollow rivet C25 C23 C24 L18 L19 C27 L20 C28 L21 C30C26 L17 L16 L10 L11 C22 L14 C19 C14 C15 C21 C20 copper strap L23 L24 hollow rivets L15 L15 +VDD2 L22 C29 +VDD1 IC1 to R1, R6 C31 C32 C33 slider R1 C10 C11 C34 slider R6L3 hollow rivets copper strap 119 100

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 Fig.13 Input impedance as a function of frequency (series components), typical values per section. Class-AB operation; VDS = 28 V; ID = 2× 250 mA; R GS = 536Ω (per section); PL = 300 W (total device); Th = 25°C. handbook, halfpage 0 250 −20 −15 MGP218 −10 50 100 150 200 ri xi Zi (Ω ) f (MHz) Fig.14 Load impedance as a function of frequency (series components), typical values per section. Class-AB operation; VDS = 28 V; ID = 2× 250 mA; R GS = 536Ω (per section); PL = 300 W (total device); Th = 25°C. handbook, halfpage 50 250 MGP217 100 150 200 ZL (Ω ) f (MHz) R L XL Fig.15 Power gain as a function of frequency, typical values per section. Class-AB operation; VDS = 28 V; ID = 2× 250 mA; R GS = 536Ω (per section); PL = 300 W (total device); Th = 25°C. handbook, halfpage 50 250 MGP216 100 150 200 G p (dB) f (MHz)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT262A1 97-06-28 0 5 10 mm scale Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 p A F b e D q U 1 H 1 U 2H Q c EE1 C A w 1 ABM B Mw 3 Mw 2 C UNIT A mm Db 5.85 5.58 0.16 0.10 21.98 21.71 11.05 10.29 10.03 20.58 20.06 9.91 9.65 5.77 5.00 c e U 2 0.250.51 1.02 w 3 27.94 qw 2w 1F 1.78 1.52 U 1 34.17 33.90 H 1 17.02 16.51 p 3.28 3.02 Q 2.85 2.59 EE 1 10.27 10.05 inches 0.230 0.220 0.006 0.004 0.865 0.855 0.435 0.405 0.395 0.81 0.79 0.390 0.380 0.227 0.060 1.345 1.335 0.67 0.65 0.129 0.119 0.112 0.102 0.404 0.396 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.