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Technical content

Product speciﬁcation Supersedes data of 2000 Feb 04

2001 Oct 10

ndbook, halfpage M3D075

2001 Oct 10 2

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B

FEATURES

High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.

APPLICATIONS

Large signal applications in the VHF frequency range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN DESCRIPTION 1 source 2 source 3 drain 1 4 gate 1 5 drain 2 6 gate 2 7 source 8 source PIN CONFIGURATION CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. handbook, halfpage MBC826 1357 2468 Top view MBB157 s QUICK REFERENCE DATA RF performance at Th =2 5°C in a push-pull common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-AB 175 28 60 >14 >55

2001 Oct 10 3

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise speciﬁed VDS drain-source voltage − 65 V VGS gate-source voltage −± 20 V ID drain current (DC) − 8A Ptot total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded− 130 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded

1.35 K/W

R th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded

0.25 K/W

Fig.2 DC SOAR. (1) Current in this area may be limited by RDSon . (2) Tmb =2 5°C. Total device; both sections equally loaded. handbook, halfpage 10−1 11 0 ID (A) VDS (V) 102 (1) MRA932 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. handbook, halfpage 0 40 80 160 160 120 MGR738 120 Th (°C) Ptot (W) (2) (1)

2001 Oct 10 4

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID =1 0m A 6 5 −− V IDSS drain-source leakage current VGS = 0; VDS =2 8V −− 2m A IGSS gate-source leakage current V GS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage ID = 10 mA; VDS =1 0V 2 − 4.5 V gfs forward transconductance I D = 1.5 A; VDS = 10 V 1.2 1.8 − S R DSon drain-source on-state resistance ID = 1.5 A; VGS =1 0V − 0.4 0.75 Ω IDSX on-state drain current V GS = 10 V; VDS =1 0V − 10 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 125 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 75 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 11 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. VDS =1 0V . handbook, halfpage6 MGR739 10 10 2 103 104 T.C. (mV/K) ID (mA) Fig.5 Drain current as a function of gate-source voltage; typical values per section. VDS =1 0V . handbook, halfpage 02 0 MGR740

10 VGS (V)

(A) Tj = 25 °C 125 °C

2001 Oct 10 5

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values per section. VGS = 10 V; ID = 1.5 A. handbook, halfpage 0 40 80 160 0.8 0.6 0.2 0.4 MGR741 120 Tj (°C) R DSon (Ω ) Fig.7 Input and output capacitance as functions of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 240 MGR742 180 120 VDS (V) C (pF) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 MGR743 VDS (V) C rs (pF)

2001 Oct 10 6

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B

APPLICATION INFORMATION

RF performance in CW operation in a push-pull, common source, class-B circuit. Th =2 5°C; Rth mb-h= 0.25 K/W; unless otherwise speciﬁed. Ruggedness in class-B operation The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 175 MHz at rated output power. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G p (dB) ηD (%) CW, class-B 175 28 2 × 50 60 >14 >55 typ. 19 typ. 65 Fig.9 Power gain and efficiency as a function of load power; typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; ZL = 4.6+ j5Ω ; f = 175 MHz. handbook, halfpage 02 0 4 0 8 0 MGR744 100 G p η D G p (dB) PL (W) η D (%) Fig.10 Load power as a function of input power; typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; ZL = 4.6+ j5Ω ; f = 175 MHz. handbook, halfpage 0 2.5 100 MGR745 0.5 1.0 1.5 2.0 PIN (W) PL (W)

2001 Oct 10 7

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B Fig.11 Test circuit for class-B operation. f = 175 MHz. MGR749 handbook, full pagewidth C15 C14 L12 +VD +VG C13 C12 C11 C25 C26 C6C4 C5 C21 C22 C23 C24 L10 L11 L16 L17 L18 L19 L20 L21 L22 L23 L24 50 Ω output 50 Ω input C16 C17 L15 L14 L13 +VD +VG C18 C20 C19 C10

2001 Oct 10 8

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B List of components class-B test circuit(see Figs 11 and 12) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with epoxy glass dielectric (ε r = 4.5); thickness 1⁄16 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side of the board are connected together by means of copper straps and hollow rivets. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF C3 ﬁlm dielectric trimmer 4 to 40 pF 2222 809 08002 C4 multilayer ceramic chip capacitor; note 1 180 pF C5, C22, C24 ﬁlm dielectric trimmer 5 to 60 pF 2222 809 08003 C6 multilayer ceramic chip capacitor; note 2 100 pF C7, C9, C12, C14, C17, C19 multilayer ceramic chip capacitor; note 1 100 nF 2222 852 47104 C8, C10 multilayer ceramic chip capacitor; note 1 680 pF C11, C20 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C13, C18 electrolytic capacitor 10 µF , 63 V C15, C16, C21 multilayer ceramic chip capacitor; note 1 82 pF C23 multilayer ceramic chip capacitor; note 1 33 pF L1, L3, L22, L24 stripline; note 3 55 Ω 111 × 2.5 mm L2, L23 semi-rigid cable 50 Ω length 111 mm ext. dia 2.2 mm L4, L5 stripline; note 3 50 Ω 38 × 2.8 mm L6, L7 stripline; note 3 50 Ω 9 × 2.8 mm L8, L9 stripline; note 3 50 Ω 8 × 2.8 mm L10, L11 stripline; note 3 50 Ω 11 × 2.8 mm L12, L15 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L13, L14 4 turns enamelled 1 mm copper wire 50 nH length 6.5 mm int. dia. 4 mm leads 2× 5m m L16, L17 stripline; note 3 50 Ω 16 × 2.8 mm L18, L19 stripline; note 3 50 Ω 25 × 2.8 mm L20, L21 stripline; note 3 50 Ω 3 × 2.8 mm R1, R2 metal ﬁlm resistor 0.4 W, 10 Ω R3, R4 10 turns potentiometer 50 k Ω R5, R6 metal ﬁlm resistor 0.4 W, 205 k Ω R7, R8 metal ﬁlm resistor 1 W, 21.5 Ω

2001 Oct 10 9

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B Fig.12 Component layout for 175 MHz class-B test circuit. Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth strap strap rivet rivet rivet rivet rivet rivet strap strap strapstrap strap strap 110 200 MGR750 +VG +VD +VG +VD L1 + L2 L23 + L24 C3 L4 L5 C4 C10 L9R1 L10 L11 C16 C15 L13 L14 L16 L17 C21 C22 C23 C24 L18 L19 L20 L21 L22 C25 C26 C17 C19 C20 L15 C18 L12 C13 C12 C11 C14

2001 Oct 10 10

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B Fig.13 Input impedance as a function of frequency (series components); typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; R GS =1 0Ω ; PL = 60 W (total device). handbook, halfpage 0 100 200 400 MGR746 Zi (Ω ) f (MHz) ri xi 300 Fig.14 Load impedance as a function of frequency (series components); typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; R GS =1 0Ω ; PL = 60 W (total device). handbook, halfpage 0 100 200 400 MGR747 ZL (Ω ) f (MHz) R L XL 300 Fig.15 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.16 Power gain as a function of frequency; typical values per section. Class-B operation; VDS = 28 V; IDQ =2 × 50 mA; R GS =1 0Ω ; PL = 60 W (total device). handbook, halfpage 100 200 400 MGR748 3000 G p (dB) f (MHz)

2001 Oct 10 11

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT161A 99-03-29 99-10-04 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 8 leads SOT161A U 2H D D 1 A F A b Mw 3b1 H 1 M MCw 2 w 1p ABM M M EE1 Q c q U 1 e e1 C B UNIT A mm Db 2.04 1.77 2.93 2.66 0.18 0.10 10.22 10.00 E 10.21 10.00 e 3.50 16.81 16.21 10.34 10.08 7.27 6.47 c e1 U 2 0.250.25 0.51 w 3 18.42 qw 2w 1F 2.70 2.08 U 1 24.97 24.71 H 1 12.83 12.57 p 3.33 3.07 Q 4.32 4.063.80 inches 0.080 0.070 0.115 0.105 0.007 0.004 0.402 0.394 D 1 10.21 9.94 0.402 0.391 0.402 0.394 10.21 9.94 0.402 0.391 0.138 0.662 0.638 0.407 0.397 0.286 0.082 0.983 0.973 0.505 0.495 0.131 0.121 0.170 0.1600.150 H DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

2001 Oct 10 12

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2001 Oct 10 13

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B NOTES

2001 Oct 10 14

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B NOTES

2001 Oct 10 15

Philips Semiconductors Product speciﬁcation VHF push-pull power MOS transistor BLF246B NOTES

© Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands 613524/06/pp16 Date of release:2001 Oct 10 Document order number: 9397 750 08678

Product Information

BLF246B specifications and overview.

Summary

VHF push-pull power MOS transistor

Description

VHF push-pull power MOS transistor

Source title BLF246B_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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