BLF246

BLF246_15 JMNIC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 12

Technical content

Product specification Supersedes data of September 1992

1996 Oct 21

1996 Oct 21 2

Philips Semiconductors Product specification VHF power MOS transistor BLF246

FEATURES

• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.

APPLICATIONS

• Large signal amplifier applications in the VHF frequency range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage GS ) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING - SOT121 PIN SYMBOL DESCRIPTION 1 d drain 2 s source 3 g gate 4 s source Fig.1 Simplified outline and symbol. handbook, halfpage s d g MAM267 QUICK REFERENCE DATA RF performance at Th =2 5°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 108 28 80 ≥16 ≥55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1996 Oct 21 3

Philips Semiconductors Product specification VHF power MOS transistor BLF246 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage −± 20 V ID DC drain current − 13 A Ptot total power dissipation up to T amb =2 5°C − 130 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER VALUE UNIT R th j-mb thermal resistance from junction to mounting base 1.35 K/W R th mb-h thermal resistance from mounting base to heatsink 0.2 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 10−1 102 11 0 (1) ID (A) VDS (V) MRA931 (2) Fig.3 Power derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 0 50 100 150 200 150 100 MGG104 Ptot (W) Th (°C) (1) (2)

1996 Oct 21 4

Philips Semiconductors Product specification VHF power MOS transistor BLF246 CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID =5 0m A 6 5 −− V IDSS drain-source leakage current V GS = 0; VDS =2 8V −− 2.5 mA IGSS gate-source leakage current V GS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS =1 0V 2 − 4.5 V ΔVGS gate-source voltage difference of matched pairs ID = 50 mA; VDS =1 0V −− 100 mV gfs forward transconductance I D = 2.5 A or 5 A; VDS = 10 V 3 4.2 − S R DSon drain-source on-state resistance ID = 5 A; VGS =1 0V − 0.2 0.3 Ω IDSX on-state drain current V GS = 10 V; VDS =1 0V − 22 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 225 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 180 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 25 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V; valid for Th = 25 to 70°C. handbook, halfpage2 MGG105 10−2 10−1 11 0 T.C. (mV/K) ID (A) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V; Tj=2 5°C. handbook, halfpage 0 5 10 20 MGG106 VGS (V) ID (A)

1996 Oct 21 5

Philips Semiconductors Product specification VHF power MOS transistor BLF246 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. VGS = 10 V; ID =5A . handbook, halfpage 05 0 100 200 MBD297 150 T ( C)o j R DSon (Ω ) 300 400 100 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. 200 400 600 800 01 0 2 0 3 0 4 0 C (pF) C is C os (V)VDS MRA930 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 300 100 200 MGG108 VDS (V) C rs (pF)

1996 Oct 21 6

Philips Semiconductors Product specification VHF power MOS transistor BLF246

APPLICATION INFORMATION

RF performance in CW operation in a common source test circuit. Th =2 5°C; Rth mb-h= 0.2 K/W; RGS =1 2Ω unless otherwise specified. Note 1. V GS = 0 (class-C). Ruggedness in class-B operation The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the following conditions: VDS = 28 V; f = 108 MHz; Th =2 5°C; Rth mb-h= 0.2 K/W at rated output power. Noise figure Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS = 28 V; ID =2A ; f = 108 MHz; RGS =2 7Ω ; Th =2 5°C; Rth mb-h= 0.2 K/W; F = typ. 3 dB. MODE OF OPERATION f (MHz) VDS (V) ID (A) PL (W) G p (dB) ηD (%) CW, class-B 108 28 0.1 80 >16 >55 CW, class-B 108 28 0.1 80 typ. 18 typ. 65 CW, class-C 108 28 0 (1) 80 typ. 15 typ. 72 Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =1 2Ω ; f = 108 MHz; Th =2 5°C; Rth mb-h= 0.2 K/W. handbook, halfpage 0 150 100 MGG096 G p (dB) PL (W) 100 ηD (%)ηD G p Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =1 2Ω ; f = 108 MHz; Th =2 5°C; Rth mb-h= 0.2 K/W. handbook, halfpage150 100 MGG095 05 3412 PL (W) PIN (W)

1996 Oct 21 7

Philips Semiconductors Product specification VHF power MOS transistor BLF246 Fig.11 Test circuit for class-B operation at 108 MHz. handbook, full pagewidth MGG097 C10 C2 C3 C11 C1 L1 L2 L3 L4 L6 L8 C14 C12 C13 C8C5 C9 VDS output 50Ωinput 50Ω VG DUT

1996 Oct 21 8

Philips Semiconductors Product specification VHF power MOS transistor BLF246 List of components(see Figs 11 and 12). Notes 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (ε r = 4.5), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C5, C8, C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C2, C3, C6, C7 film dielectric trimmer 5 to 60 pF 2222 809 08003 C9 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228 C10 multilayer ceramic chip capacitor; note 1 6 8p F+3 9p F in parallel C11 multilayer ceramic chip capacitor; note 1 69 pF + 100 pF in parallel C12 multilayer ceramic chip capacitor; note 1 2x 100 pF in parallel C13 multilayer ceramic chip capacitor; note 1 62 pF L1 5 turns enamelled 0.6 mm copper wire 52 nH length 6.5 mm int. dia. 3 mm leads 2× 10 mm L2 2 turns enamelled 0.6 mm copper wire 19 nH length 3.5 mm int. dia. 3 mm leads 2× 7.5 mm L3, L4 stripline; note 2 31 Ω length 13 mm width 6 mm L5 3 turns enamelled 1.6 mm copper wire 36 nH length 12 mm int. dia. 6 mm leads 2× 5m m L6 hairpin of enamelled 1.6 mm copper wire 14 nH length 20 mm L7 grade 3B Ferroxcube HF choke 4312 020 36640 L8 3 turns enamelled 1.6 mm copper wire 52 nH length 8 mm int. dia. 6 mm leads 2× 9m m R1 metal film resistor 2 × 24 Ω in parallel, 0.4 W R2 metal film resistor 100 k Ω, 0.4 W R3 metal film resistor 10 Ω, 0.4 W

1996 Oct 21 9

Philips Semiconductors Product specification VHF power MOS transistor BLF246 Fig.12 Component layout for 108 MHz class-B test circuit. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper and lower sheets. handbook, full pagewidth STRAP RIVET STRAP 150 MGG098 C10 C11 + VG L3 L4 R3 C8 C12 C13 C14 +VDS Dimensions in mm.

1996 Oct 21 10

Philips Semiconductors Product specification VHF power MOS transistor BLF246 Fig.13 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =1 2Ω ; PL =8 0W ;Th =2 5°C; Rth mb-h= 0.2 K/W. handbook, halfpage 0 50 100 200 −10 −15 150 MGG093 f (MHz) Zi (Ω ) ri xi Fig.14 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =1 2Ω ; PL =8 0W ;Th =2 5°C; Rth mb-h= 0.2 K/W. handbook, halfpage6 MGG094 0 50 100 200 150 ZL (Ω ) f (MHz) R L XL Fig.15 Power gain as a function of frequency, typical values. Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =1 2Ω ; PL =8 0W ;Th =2 5°C; Rth mb-h= 0.2 K/W. handbook, halfpage 0 50 100 200 150 MGG092 G p (dB) f (MHz)

1996 Oct 21 11

Philips Semiconductors Product specification VHF power MOS transistor BLF246 PACKAGE OUTLINE Fig.16 SOT121. Dimensions in mm. handbook, full pagewidth MBC873 3229 (2x) 6.5 min 5.9 5.5 6.35 3.35 3.04 4.50 4.05 7.5 max 12.2 max 2.54 max 0.14 ceramic BeO metal 18.4225.2 max

1996 Oct 21 12

Philips Semiconductors Product specification VHF power MOS transistor BLF246 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.