BLF245_15 JMNIC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF245 VHF power MOS transistor

Philips Semiconductors Product specification VHF power MOS transistor BLF245

FEATURES

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (V GS ) groups are available on request. PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. lfpage MSB057 s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 175 28 30 > 13 > 50

Philips Semiconductors Product specification VHF power MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage V GS =0 − 65 V ±VGS gate-source voltage V DS =0 − 20 V ID DC drain current − 6A Ptot total power dissipation up to T mb = 25°C − 68 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base Tmb =2 5°C; Ptot= 68 W 2.6 K/W R th mb-h thermal resistance from mounting base to heatsink Tmb =2 5°C; Ptot= 68 W 0.3 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 10−1 102 11 0 ID (A) VDS (V) (1) MRA921 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 0 40 80 160 100 120 MGP167 Ptot (W) Th (°C) (1) (2)

Philips Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID =1 0m A 6 5 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 2m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V ΔVGS gate-source voltage difference of matched devices ID = 10 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 1.5 A; VDS = 10 V 1.2 1.9 − S R DS(on) drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 10 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 125 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 75 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 7 − pF F noise figure (see Fig.14) input and output power matched for: ID = 1 A; VDS =2 8V ; PL =3 0W ; R1 = 1 kΩ ; Th =2 5°C; f = 175 MHz − 2 − dB Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V; valid for Tj= 25 to 125°C. handbook, halfpage6 T.C. (mV/K) ID (mA) MGP168 10 10 2 103 104 Fig.5 Drain current as a function of gate-source voltage, typical values. VDS =1 0V . handbook, halfpage 02 0 MGP169 ID (A) VGS (V) Tj = 25 °C 125 °C

Philips Semiconductors Product specification VHF power MOS transistor BLF245 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. VGS =1 0V ; ID = 1.5 A. handbook, halfpage 0.8 0.6 0.4 0.2 40 80 160 120 MGP170 R DS(on) (Ω ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 240 200 160 120 MGP171 C (pF) VDS (V) C is C os Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 02 0 C rs (pF) VDS (V) 30 MRA920

Philips Semiconductors Product specification VHF power MOS transistor BLF245 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ . RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) Zi (Ω ) (note1) ZL (Ω ) CW, class-B 175 28 50 30 > 13 typ. 15.5 < 50 typ. 67 Note 1. R1 included. Ruggedness in class-B operation The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: T h =2 5°C; Rth mb-h= 0.3 K/W; at rated load power. Fig.9 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 28 V; IDQ =5 0m A ; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 10 20 30 50 100 MGP172 G p (dB) PL (W) ηD (%)G p ηD Fig.10 Load power as a function of input power, typical values. Class-B operation; VDS = 28 V; IDQ =5 0m A ; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage60 0 0.6 2.4 MEA736 1.2 PL (W) PIN (W) 1.8

Philips Semiconductors Product specification VHF power MOS transistor BLF245 Fig.11 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 01 0 2 0 100 MGP173 G p (dB) PL (W) ηD (%) ηD G p Fig.12 Load power as a function of input power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage20 0 0.6 2.4 MEA737 1.2 PIN (W) PL (W) 1.8 Fig.13 Test circuit for class-B operation. f = 175 MHz. handbook, full pagewidth MGP174 50 Ω input L1 L2 D.U.T. L3 L6 L4R1 Zi C10 +VGG +VDD R3C6 50 Ω output

Philips Semiconductors Product specification VHF power MOS transistor BLF245 List of components (class-B test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (ε r = 4.5), thickness1⁄16 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 4 to 40 pF 2222 809 07008 C2, C8 film dielectric trimmer 5 to 60 pF 2222 809 07011 C3 multilayer ceramic chip capacitor 100 pF 2222 854 13101 C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C5 ceramic capacitor 100 pF 2222 680 10101 C7 multilayer ceramic chip capacitor (note 1) 18 pF C9 multilayer ceramic chip capacitor (note 1) 27 pF C10 multilayer ceramic chip capacitor (note 1) 24 pF L1 3 turns enamelled 0.5 mm copper wire 13.5 nH length 3.5 mm int. dia. 2 mm leads 2× 2m m L2, L3 stripline (note 2) 30 Ω 10 × 6m m L4 6 turns enamelled 1.5 mm copper wire 98 nH length 12.5 mm int. dia. 5 mm leads 2× 2m m L5 grade 3B Ferroxcube RF choke 4312 020 36640 L6 2 turns enamelled 1.5 mm copper wire 24.5 nH length 4 mm int. dia. 5 mm leads 2× 2m m R1 metal film resistor 1 k Ω R2 metal film resistor 1 M Ω R3 metal film resistor 10 Ω

Philips Semiconductors Product specification VHF power MOS transistor BLF245 Fig.14 Component layout for 175 MHz class-B test circuit. The circuit and components are situated on one side of the epoxy fiber-glass board; the other side is unetched copper and serves as an earth. Earth connections are made by means of fixing screws, hollow rivets and copper straps under the sources and around the edges, to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm. handbook, full pagewidth MGP175 copper straps copper straps copper strap rivets C1 C2 +VGG +VDD L2 L3 C7 C9 C10 135

Philips Semiconductors Product specification VHF power MOS transistor BLF245 Fig.15 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ =5 0m A ; PL = 30 W; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 20 40 120 60 80 100 MGP177 Zi (Ω ) −xi f (MHz) ri Fig.16 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 28 V; IDQ =5 0m A ; PL = 30 W; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 20 40 120 60 80 100 MGP178 ZL (Ω ) R L f (MHz) XL Fig.17 Definition of MOS impedance. handbook, halfpage MBA379Zi ZL Fig.18 Power gain as a function of frequency, typical values. Class-B operation; VDS = 28 V; IDQ =5 0m A ; PL = 30 W; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 20 40 120 60 80 100 MGP179 G p (dB) f (MHz)

Philips Semiconductors Product specification VHF power MOS transistor BLF245 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power MOS transistor BLF245 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.