BLF244_15 JMNIC | Alldatasheet

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Product specification September 1992 DISCRETE SEMICONDUCTORS BLF244 VHF power MOS transistor

Philips Semiconductors Product specification VHF power MOS transistor BLF244

FEATURES

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures excellent reliability.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (V GS ) groups are available on request. PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. k, halfpage MSB057 s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) CW, class-B 175 28 15 > 13 > 50

Philips Semiconductors Product specification VHF power MOS transistor BLF244 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 3A Ptot total power dissipation up to T mb = 25°C − 38 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base Tmb =2 5°C; Ptot= 38 W 4.6 K/W R th mb-h thermal resistance from mounting base to heatsink Tmb =2 5°C; Ptot= 38 W 0.3 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 10−1 11 0 ID (A) VDS (V) 102 (1) MRA919 (2) Fig.3 Power/temperature derating curves. (1) Short-time operation during mismatch. (2) Continuous operation. handbook, halfpage 0 50 100 150 Ptot (W) Th (°C) MGP151 (1) (2)

Philips Semiconductors Product specification VHF power MOS transistor BLF244 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID =5m A 6 5 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 1m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V ΔVGS gate-source voltage difference of matched devices ID = 5 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 0.75 A; VDS = 10 V 0.6 −− S R DS(on) drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 5 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 60 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 40 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF F noise figure (see Fig. 13) I D = 0.5 A; VDS = 28 V; R1 = 23Ω; Th = 25°C; f = 175 MHz; R th mb-h= 0.3 K/W − 4.3 − dB Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V; valid for Tj= 25 to 125°C. handbook, halfpage2 MGP152 10 10 2 1031 T.C. (mV/K) ID (mA) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS =1 0V . solid line: Tj=2 5°C. dotted line: Tj= 125°C. handbook, halfpage 048 1 6 MGP153 ID (A) VGS (V)

Philips Semiconductors Product specification VHF power MOS transistor BLF244 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. VGS = 10 V; ID = 0.75 A. handbook, halfpage 40 80 160 120 MGP154 R DS(on) (Ω ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 160 120 10 20 40 30 MGP155 C (pF) C is C os VDS (V) Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 20 40 MGP156 C rs (pF) VDS (V)

Philips Semiconductors Product specification VHF power MOS transistor BLF244 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h = 3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) Zi (Ω ) (note1) ZL (Ω ) (Ω ) CW, class-B 175 28 25 15 > 13 typ. 17 > 50 typ. 65 Note 1. R1 included. Ruggedness in class-B operation The BLF244 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: T h =2 5°C; Rth mb-h= 0.3 K/W; at rated load power. Fig.9 Load power as a function of input power, typical values. Class-B operation; VDS = 28 V; IDQ =2 5m A ; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage MGP157 PL (W) PIN (W) Fig.10 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 28 V; IDQ =2 5m A ; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 100 10 20 30 MGP158 G p (dB) G p PL (W) ηD (%) ηD

Philips Semiconductors Product specification VHF power MOS transistor BLF244 Fig.11 Load power as a function of input power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 012 MGP159 PL (W) PIN (W) Fig.12 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 100 48 1 6 12 MGP160 G p (dB) PL (W) ηD (%) G p ηD Fig.13 Test circuit for class-B operation. f = 175 MHz. handbook, full pagewidth MGP161 50 Ω input C1 L1 L3 D.U.T. L4 C14 L8L7 C13 C10C9 C11 C12 50 Ω outputL2 +VG +VD

Philips Semiconductors Product specification VHF power MOS transistor BLF244 List of components (class-B test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε r = 4.5), thickness1⁄16 inch. 3. Refer to Application Information for value. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C12 multilayer ceramic chip capacitor (note 1) 680 nF C2 multilayer ceramic chip capacitor (note 1) 20 pF C3, C4, C9 film dielectric trimmer 5 to 60 pF 2222 809 08003 C5 multilayer ceramic chip capacitor (note 1) 75 pF C6 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor (note 1) 100 pF C8 multilayer ceramic chip capacitor (note 1) 47 pF C10, C11 multilayer ceramic chip capacitor (note 1) 11 pF C13 solid tantalum capacitor 2.2 µF C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104 L1 4 turns enamelled 1 mm copper wire 32 nH length 6.3 mm int. dia. 3 mm leads 2× 5m m L2 1 turn enamelled 1 mm copper wire 12.2 nH int. dia. 5.6 mm leads 2× 5m m L3, L4 stripline (note 2) 30 Ω 15 × 6 mm L5 6 turns enamelled 1 mm copper wire 119 nH length 10.4 mm int. dia. 6 mm leads 2× 5m m L6 grade 3B Ferroxcube RF choke 4312 020 36640 L7 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm int. dia. 3 mm leads 2× 5m m L8 4 turns enamelled 1 mm copper wire 28.5 nH length 8.5 mm int. dia. 3 mm leads 2× 5m m R1 metal film resistor (note 3) R2 0.4 W metal film resistor 1 M Ω R3 0.4 W metal film resistor 10 Ω

Philips Semiconductors Product specification VHF power MOS transistor BLF244 Fig.14 Component layout for 175 MHz class-B test circuit. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and hollow rivets under the sources and around the edges to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm. handbook, full pagewidth MGP162 C3 C4 C5L1 L2 C7 C14 L5 R3 +VD C13 L7 C8 L8 C11 C12 C10 +VG C6 L3 L4 strap rivetstrap 150

Philips Semiconductors Product specification VHF power MOS transistor BLF244 Fig.15 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS =2 8V ;IDQ =2 5m A ; PL = 15 W; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 20 120 Zi (Ω ) xi 40 60 80 100 f (MHz) MGP164 ri Fig.16 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS =2 8V ;IDQ =2 5m A ; PL = 15 W; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 20 120 MGP165 40 60 80 100 ZL (Ω ) f (MHz) R L XL Fig.17 Power gain as function of frequency, typical values. Class-B operation; VDS =2 8V ;IDQ =2 5m A ; PL = 15 W; Th =2 5°C; Rth mb-h= 0.3 K/W. handbook, halfpage 20 120 MGP166 40 60 80 100 G p (dB) f (MHz)

Philips Semiconductors Product specification VHF power MOS transistor BLF244 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power MOS transistor BLF244 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.