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PDF pages: 20

Technical content

Product speciﬁcation Supersedes data of September 1992

1998 Jul 02

HF/VHF power MOS transistor M3D060

1998 Jul 02 2

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177

FEATURES

High power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.

APPLICATIONS

Designed for industrial and military applications in the HF/VHF frequency range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (V GS ) information is provided for matched pair applications. Refer to the handbook 'General' section for further information. PINNING PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline (SOT121B) and symbol. s d g MBB072 andbook, halfpage MLA876 QUICK REFERENCE DATA RF performance at Th =2 5°C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) G p (dB) ηD (%) (dB) (dB) SSB class-AB 28 50 150 (PEP) >20 >35 <−30 <−30 CW class-B 108 50 150 typ. 19 typ. 70 −−

1998 Jul 02 3

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V VGS gate-source voltage −± 20 V ID drain current (DC) − 16 A Ptot total power dissipation T mb ≤ 25 °C − 220 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER VALUE UNIT R th j-mb thermal resistance from junction to mounting base max. 0.8 K/W R th mb-h thermal resistance from mounting base to heatsink max. 0.2 K/W Fig.2 DC SOAR. (1) Current in this area may be limited by RDSon . (2) Tmb =2 5°C. handbook, halfpage102 10−1 MRA906 11 0 VDS (V) ID (A) 102 103 (1) (2) Fig.3 Power derating curves. (1) Short-time operation during mismatch. (2) Continuous operation. handbook, halfpage 300 200 100 (2) (1) 100 150 MGP089 Ptot (W) Th (°C)

1998 Jul 02 4

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 50 mA; VGS =0 1 1 0 −− V IDSS drain-source leakage current V GS = 0; VDS =5 0V −− 2.5 mA IGSS gate-source leakage current V GS = ±20 V; VDS =0 −− 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS =1 0V 2 − 4.5 V ΔVGS gate-source voltage difference of matched pairs ID = 50 mA; VDS =1 0V −− 100 mV gfs forward transconductance I D = 5 A; VDS = 10 V 4.5 6.2 − S R DSon drain-source on-state resistance ID = 5 A; VGS =1 0V − 0.2 0.3 Ω IDSX on-state drain current V GS = 10 V; VDS =1 0V − 25 − A C is input capacitance V GS = 0; VDS =5 0V ; f=1M H z − 480 − pF C os output capacitance V GS = 0; VDS =5 0V ; f=1M H z − 190 − pF C rs feedback capacitance V GS = 0; VDS =5 0V ; f=1M H z − 14 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. VDS = 10 V; valid for Th =2 5t o7 0°C. handbook, halfpage0 MGP090 10−1 11 010−2 ID (A) T.C. (mV/K) Fig.5 Drain current as a function of gate-source voltage; typical values. VDS =1 0V . handbook, halfpage 51 0 1 5 MGP091 ID (A) VGS (V)

1998 Jul 02 5

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. ID = 5 A; VGS =1 0V . handbook, halfpage 400 300 200 100 50 100 150 MGP092 R DSon (mΩ ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage; typical values. VGS = 0; f = 1 MHz. handbook, halfpage 1200 800 400 20 40 C is C os 60VDS (V) C (pF) MBK408 Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. VGS = 0; f = 1 MHz. handbook, halfpage 300 200 100 10 50 20 30 40 MGP093 C rs (pF) VDS (V)

1998 Jul 02 6

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB test circuit (see Fig.13). Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. Ruggedness in class-AB operation The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: f = 28 MHz; V DS = 50 V at rated output power. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) G p (dB) ηD (%) (dB) (note1) (dB) (note1) SSB, class-AB 28 50 0.7 20 to 150 (PEP) >20 typ. 35 >35 typ. 40 <−30 typ.−35 <−30 typ.−38 Fig.9 Power gain as a function of load power; typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS =5 Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 100 200 MGP096 G p (dB) PL (W) PEP Fig.10 Two tone efficiency as a function of load power; typical values. handbook, halfpage 100 200 MGP094 ηD (%) PL (W) PEP Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS =5 Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz.

1998 Jul 02 7

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 Fig.11 Third order intermodulation distortion as a function of load power; typical values. handbook, halfpage −20 −40 −30 −50 −60 100 200 MGP097 (dB) PL (W) PEP Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS =5 Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.12 Fifth order intermodulation distortion as a function of load power; typical values. handbook, halfpage −20 −40 −30 −50 −60 100 200 MGP098 (dB) PL (W) PEP Class-AB operation; VDS = 50 V; IDQ = 0.7 A; R GS =5 Ω ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.13 Test circuit for class-AB operation at 28 MHz. handbook, full pagewidth MGP095 input 50 Ω L1 L2 D.U.T. L3 L6 L4R2R1 C4C2 +VG C13 C10 C11 C12 C15 +VD C14 R5 C7 output 50 Ω

1998 Jul 02 8

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 List of components class-AB test circuit(see Fig.13) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C13, C14 ﬁlm dielectric trimmer 7 to 100 pF 2222 809 07015 C2 multilayer ceramic chip capacitor (note 1) 56 pF C3, C11 multilayer ceramic chip capacitor (note 1) 62 pF C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C8 electrolytic capacitor 2.2 µF, 63 V C9, C10 multilayer ceramic chip capacitor (note 1) 20 pF C12 multilayer ceramic chip capacitor (note 1) 100 pF C15 multilayer ceramic chip capacitor (note 1) 150 pF L1 5 turns enamelled 0.7 mm copper wire 133 nH length 4.5 mm; int. dia. 6 mm; leads 2× 5m m L2, L3 stripline (note 2) 41.1 Ω length 13× 6m m L4 7 turns enamelled 1.5 mm copper wire 236 nH length 12.5 mm; int. dia. 8 mm; leads 2× 5m m L5 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L6 5 turns enamelled 2 mm copper wire 170 nH length 11.5 mm; int. dia. 8 mm; leads 2× 5m m R1, R2 metal ﬁlm resistor 10 Ω , 1 W R2 metal ﬁlm resistor 10 k Ω, 0.4 W R3 metal ﬁlm resistor 1 M Ω , 0.4 W R5 metal ﬁlm resistor 10 k Ω , 1 W

1998 Jul 02 9

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 Fig.14 Input impedance as a function of frequency (series components); typical values. handbook, halfpage 10 20 30 MGP099 Zi (Ω ) ri xi f (MHz) Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25Ω ; RL = 6.25Ω . Fig.15 Power gain as a function of frequency; typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25Ω ; RL = 6.25Ω . handbook, halfpage 10 20 30 MGP100 G p (dB) f (MHz)

1998 Jul 02 10

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in CW operation in a common source class-B test circuit (see Fig.19). Th =2 5°C; Rth mb-h= 0.2 K/W; RGS = 15.8Ω unless otherwise speciﬁed. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) G p (dB) ηD (%) CW, class-B 108 50 0.1 150 typ. 19 typ. 70 Fig.16 Power gain as a function of load power; typical values. handbook, halfpage 0 100 200 MGP101 G p (dB) PL (W) Class-B operation; VDS = 50 V; IDQ = 100 mA; R GS = 15.8Ω ; f = 108 MHz. Fig.17 Two tone efficiency as a function of load power; typical values. Class-B operation; VDS = 50 V; IDQ = 100 mA; R GS = 15.8Ω ; f = 108 MHz. handbook, halfpage 100 100 200 MGP102 ηD (%) PL (W)

1998 Jul 02 11

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 Fig.18 Load power as a function of input power; typical values. handbook, halfpage 012 4 200 100 MGP103 PL (W) PIN (W) Class-B operation; VDS = 50 V; IDQ = 100 mA; R GS = 15.8Ω ; f = 108 MHz. Fig.19 Test circuit for class-B operation at 108 MHz. handbook, full pagewidth MGP104 input 50 Ω C6 C11 C19 L1 L3 D.U.T. BLF177 L4 L8 R2R1 C2 C5 C3 C4 C16C14 C13 C15 C17 +VD L7 C18 R6 C12 C9 C10 output 50 ΩL2

1998 Jul 02 12

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 List of components class-B test circuit(see Fig.19) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C16, C18 ﬁlm dielectric trimmer 2.5 to 20 pF 2222 809 07004 C3 multilayer ceramic chip capacitor (note 1) 20 pF C4, C5 multilayer ceramic chip capacitor (note 1) 62 pF C6, C7, C9, C10 multilayer ceramic chip capacitor (note 1) 1n F C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C13, C14 multilayer ceramic chip capacitor (note 1) 36 pF C15 multilayer ceramic chip capacitor (note 1) 12 pF C17 multilayer ceramic chip capacitor (note 1) 5.6 pF C19 electrolytic capacitor 4.4 µF, 63 V 2222 030 28478 L1 3 turns enamelled 0.8 mm copper wire 22 nH length 5.5 mm; int. dia. 3 mm; leads 2× 5m m L2 stripline (note 2) 64.7 Ω 31 × 3m m L3, L4 stripline (note 2) 41.1 Ω 10 × 6m m L5 6 turns enamelled 1.6 mm copper wire 122 nH length 13.8 mm; int. dia. 6 mm; leads 2× 5m m L6 grade 3B Ferroxcube wideband HF choke 4312 020 36642 L7 1 turn enamelled 1.6 mm copper wire 16.5 nH int. dia. 9 mm; leads 2× 5m m L8 2 turns enamelled 1.6 mm copper wire 34.4 nH length 3.9 mm; int. dia. 6 mm; leads 2× 5m m R1, R2 metal ﬁlm resistor 31.6 Ω , 1 W R3 metal ﬁlm resistor 1 k Ω , 0.4 W R4 cermet potentiometer 5 k Ω R5 metal ﬁlm resistor 44.2 Ω , 0.4 W R6 metal ﬁlm resistor 10 Ω, 1W

1998 Jul 02 13

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 Fig.20 Component layout for 108 MHz class-B test circuit. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact between upper and lower sheets. handbook, full pagewidth MGP105 174 strap strap straprivet C1 C2 C3 C4 R1 R2 L4 L7 L8C14 C13 C12 +VD C10 C11 C15 C19 C16 C18 C17 Dimensions in mm.

1998 Jul 02 14

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 Fig.21 Input impedance as a function of frequency (series components); typical values. Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS =1 5Ω . handbook, halfpage 0 200 MGP107 100 ri xi Zi (Ω ) f (MHz) Fig.22 Load impedance as a function of frequency (series components); typical values. Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS =1 5Ω . handbook, halfpage 0 200 MGP108 100 XL ZL (Ω ) f (MHz) R L Fig.23 Definition of transistor impedance. handbook, halfpage MBA379Zi ZL Fig.24 Power gain as a function of frequency; typical values. handbook, halfpage 0 200 100 MGP109 G p (dB) f (MHz) Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS =1 5Ω .

1998 Jul 02 15

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT121B 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U 3D 1U 2 H H L b Q D U 1 q A F c p w 1 M Mw 2 B C C A AB α 0.51 UNIT A mm Db 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c D 1 U 3U 2 12.32 12.06 1.02 w 1 w 2 45° αL 7.93 6.32 U 1 24.90 24.63 Q 4.45 3.91 q 18.42 F 2.67 2.41 0.02inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.040.312 0.249 0.98 0.97 0.175 0.154 0.7250.105 0.095 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

1998 Jul 02 16

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1998 Jul 02 17

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 NOTES

1998 Jul 02 18

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 NOTES

1998 Jul 02 19

Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor BLF177 NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Product Information

BLF177 specifications and overview.

Summary

HF/VHF power MOS transistor

Description

HF/VHF power MOS transistor

Source title BLF177_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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