BLF175

BLF175_15 JMNIC | Alldatasheet

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Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF175 HF/VHF power MOS transistor

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175

FEATURES

• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures excellent reliability.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (V GS ) information is provided for matched pair applications. Refer to the 'General' section for further information. PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. ook, halfpage MSB057 s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source test circuit. Note 1. 2-tone efficiency. MODE OF OPERATION f (MH Z) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) (dB) class-A 28 50 800 8 (PEP) > 24 −< − 40 class-AB 28 50 150 30 (PEP) typ. 24 typ. 40 (note 1) typ.−35 CW, class-B 108 50 30 30 typ. 20 typ. 65 −

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V ±VGS gate-source voltage − 20 V ID DC drain current − 4A Ptot total power dissipation up to T mb = 25°C − 68 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base Tmb = 25°C; Ptot = 68 W 2.6 K/W R th mb-h thermal resistance from mounting base to heatsink Tmb = 25°C; Ptot = 68 W 0.3 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb = 25°C. handbook, halfpage 10−1 11 0 ID (A) VDS (V) 102 (1) MRA905 (2) Fig.3 Power/temperature derating curves. (1) Continuous operation. (2) Short-time operation during mismatch. handbook, halfpage 0 40 80 160 100 MGP063 120 Th (°C) (2) (1) Ptot (W)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 mA; VGS = 0 110 −− V IDSS drain-source leakage current VGS = 0; VDS = 50 V −− 100 µA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V ΔVGS gate-source voltage difference of matched pairs ID = 10 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 1 A; VDS = 10 V 1.1 1.6 − S R DS(on) drain-source on-state resistance ID = 1 A; VGS = 10 V − 0.75 1.5 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 5.5 − A C is input capacitance V GS = 0; VDS = 50 V; f = 1 MHz− 130 − pF C os output capacitance V GS = 0; VDS = 50 V; f = 1 MHz− 36 − pF C rs feedback capacitance V GS = 0; VDS = 50 V; f = 1 MHz− 3.7 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS = 10 V. handbook, halfpage0 MGP064 10−2 10−1 1 T.C. (mV/K) ID (A) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS = 10 V; Tj=2 5°C. handbook, halfpage MGP065 51 0 VGS (V) ID (A)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 1 A; VGS = 10 V. handbook, halfpage 0 50 100 150 1.5 0.5 MGP066 R DS(on) (Ω ) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 400 200 300 100 10 50 MGP067 20 30 40 VDS (V) C (pF) C os C is Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 150 100 10 50 MGP068 20 30 40 C rs (pF) VDS (V)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 25°C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in SSB operation in a common source circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. P L (W) f (MHz) VDS (V) IDQ (mA) G P (dB) (dB) (note1) (dB) (note1) R GS (Ω ) 0 to 8 (PEP) 28 50 800 > 24 typ. 28 >− 40 typ.−44 <− 40 typ.−64 Fig.9 Power gain as a function of load power, typical values. Class-A operation; VDS = 50 V; IDQ = 0.8 A; R GS = 24Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25°C. dotted line: Th = 70°C. handbook, halfpage 0 5 10 20 MGP069 G p (dB) PL (W) PEP Fig.10 Third order intermodulation distortion as a function of load power, typical values. Class-A operation; VDS = 50 V; IDQ = 0.8 A; R GS = 24Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. solid line: Th = 25°C. dotted line: Th = 70°C. handbook, halfpage 0 5 10 20 −20 −60 −80 −40 MGP070 (dB) PL (W) PEP

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.11 Power gain as a function of frequency, typical values. Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24Ω ; f1 − f2 = 1 MHz. handbook, halfpage 01 0 2 0 4 0 MGP071 G p (dB) f (MHz) Fig.12 Third order intermodulation distortion as a function of frequency, typical values. Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24Ω ; f1 − f2 = 1 MHz. handbook, halfpage 01 0 2 0 4 0 −20 −60 −40 MGP072 (dB) f (MHz) Fig.13 Test circuit for class-A operation. f = 28 MHz. handbook, full pagewidth MGP073 50 Ω input C2T1 D.U.T. L4 +VG +VD R2 C4 C5 50 Ω output

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 List of components (class-A test circuit) Note 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 multilayer ceramic chip capacitor (note 1) 39 pF C2 multilayer ceramic chip capacitor 3 × 10 nF 2222 852 47103 C3, C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C8 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109 C9 multilayer ceramic chip capacitor (note 1) 24 pF L1 4 turns enamelled 0.6 mm copper wire 86 nH length 3.3 mm; int. dia. 5 mm; leads 2 x 2 mm L2 36 turns enamelled 0.7 mm copper wire wound on a rod grade 4B1 Ferroxcube drain choke 20 µH length 30 mm; int. dia. 5 mm 4330 030 30031 L3 grade 3B Ferroxcube wideband RF choke 4312 020 36640 L4 8 turns enamelled 1 mm copper wire 189 nH length 9.5 mm; int. dia. 5 mm; leads 2 x 3 mm R1 0.4 W metal film resistor 24 Ω R2 0.4 W metal film resistor 1500 Ω R3 0.4 W metal film resistor 10 Ω T1 4 : 1 transformer; 18 turns twisted pair of 0.25 mm copper wire with 10 twists per cm, wound on a grade 4C6 toroidal core dimensions 9 x 6 x 3 mm 4322 020 97171

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.14 Component layout for 28 MHz class-A test circuit. Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. handbook, full pagewidth mounting screw strapstrap MGP074 +VDD+VG 100

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25°C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in SSB operation in a common source circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) f (MHz) VDS (V) IDQ (mA) G P (dB) ηD (%) (dB) (note1) (dB) (note1) R GS (Ω ) 30 (PEP) 28 50 150 typ. 24 typ. 40 (note 2) typ.−35 typ. −40 22 Notes 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. 2. 2-tone efficiency. Ruggedness in class-AB operation The BLF175 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P L = 30 W single tone under the following conditions: VDS = 50 V; f = 28 MHz. Fig.15 Power gain as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; R GS = 22Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 0 2 04 06 0 MGP076 G p (dB) PL (W) PEP Fig.16 Two tone efficiency as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; R GS = 22Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 0 2 04 06 0 MGP077 ηD (%) PL (W) PEP

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.17 Third order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; R GS = 22Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 0 2 04 06 0 −20 −60 −40 MGP078 (dB) PL (W) PEP Fig.18 Fifth order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; R GS = 22Ω ;f1 = 28.000 MHz; f2 = 28.001 MHz. handbook, halfpage 0 2 04 06 0 −20 −60 −40 MGP079 (dB) PL (W) PEP Fig.19 Test circuit for class-AB operation. f = 28 MHz. handbook, full pagewidth /,/, /,/, /,/, C9 C12 +VD 50 Ω output C11 C10 L3D.U.T. +VG 50 Ω output MGP080

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 List of components (class-AB test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 4.5), thickness 1.6 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C10 multilayer ceramic chip capacitor (note 1) 62 pF C2, C4, C8, C11 film dielectric trimmer 5 to 60 pF 2222 809 07011 C3 multilayer ceramic chip capacitor (note 1) 51 pF C5, C6, C9 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C7 multilayer ceramic chip capacitor (note 1) 10 pF C12 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109 L1 9 turns enamelled 1 mm copper wire 280 nH length 11 mm; int. dia. 6 mm; leads 2 x 4 mm L2, L3 stripline (note 2) 30 Ω length 10 mm; width 6 mm L4 14 turns enamelled 1 mm copper wire 1650 nH length 20 mm; int. dia. 12 mm; leads 2 x 2 mm L5 10 turns enamelled 1 mm copper wire 380 nH length 13 mm; int. dia. 7 mm; leads 2 x 3 mm L6 grade 3B Ferroxcube wideband RF choke 4312 020 36640 R1 0.4 W metal film resistor 22 Ω R2 0.4 W metal film resistor 1 M Ω R3 0.4 W metal film resistor 10 Ω

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.20 Component layout for 28 MHz class-AB test circuit. Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts. Dimensions in mm. handbook, full pagewidth MGP081 C3C1 C2 C4 L2 L3 C8 C11 C10 C12 L6C6 150 rivet strapstrap mounting screw strap

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.21 Input impedance as a function of frequency (series components), typical values. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS =2 2Ω . handbook, halfpage 01 0 2 0 4 0 −10 −20 MGP083 ri xi Zi (Ω ) f (MHz) Fig.22 Load impedance as a function of frequency (series components), typical values. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS =2 2Ω . handbook, halfpage 01 0 2 0 3 0 MGP084 R L XL ZL (Ω ) f (MHz) Fig.23 Power gain as a function of frequency, typical values. Class-AB operation; VDS = 50 V; IDQ = 0.15 A; PL = 30 W (PEP); RGS =2 2Ω . handbook, halfpage 0 1 02 03 0 MGP085 G p (dB) f (MHz)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) G P (dB) ηD (%) R GS (Ω ) CW, class-B 108 50 30 30 typ. 20 typ. 65 10 Fig.24 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS =1 0Ω . handbook, halfpage 200 MGP086 100 Zi (Ω ) f (MHz) ri xi Fig.25 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS =1 0Ω . handbook, halfpage 0 200 MGP087 100 f (MHz) ZL (Ω ) R L XL

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.26 Power gain as a function of frequency, typical values. Class-B operation; VDS = 50 V; IDQ = 30 mA; PL = 30 W; RGS =1 0Ω . handbook, halfpage 200 MGP088 100 f (MHz) G p (dB)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.