BLF145

BLF145_15 JMNIC | Alldatasheet

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Technical content

Product specification September 1992 DISCRETE SEMICONDUCTORS BLF145 HF power MOS transistor

Philips Semiconductors Product specification HF power MOS transistor BLF145

FEATURES

• High power gain
• Low noise figure
• Good thermal stability
• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (V GS ) groups are available on request. PINNING - SOT123 PIN DESCRIPTION 1 drain 2 source 3 gate 4 source PIN CONFIGURATION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Fig.1 Simplified outline and symbol. k, halfpage MSB057 s d g MBB072 QUICK REFERENCE DATA RF performance at Th = 25°C in a common source test circuit. Note 1. 2-tone efficiency. MODE OF OPERATION f (MHz) VDS (V) ID (A) PL (W) G p (dB) ηD (%) (note1) (dB) SSB, class-A 28 28 1.3 8 (PEP) > 24 −< − 40 SSB, class-AB 28 28 − 30 (PEP) typ. 20 typ. 40 typ. −35

Philips Semiconductors Product specification HF power MOS transistor BLF145 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS drain-source voltage − 65 V ±VGSS gate-source voltage − 20 V ID DC drain current − 6A Ptot total power dissipation up to T mb = 25°C − 68 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 2.6 K/W R th mb-h thermal resistance from mounting base to heatsink 0.3 K/W Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb =2 5°C. handbook, halfpage 10−1 11 0 ID (A) VDS (V) 102 MRA901 (1) (2) Fig.3 Power/temperature derating curves. (1) Short-time operation during mismatch. (2) Continuous operation. handbook, halfpage (1) 40 80 160 100 120 MGP035 Ptot (W) Th (°C) (2)

Philips Semiconductors Product specification HF power MOS transistor BLF145 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 mA; VGS = 0 65 −− V IDSS drain-source leakage current VGS = 0; VDS = 28 V −− 2m A IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −− 1 µA VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V ΔVGS gate-source voltage difference of matched devices ID = 10 mA; VDS = 10 V −− 100 mV gfs forward transconductance I D = 1.5 A; VDS = 10 V 1.2 −− S R DS(on) drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω IDSX on-state drain current V GS = 10 V; VDS = 10 V − 10 − A C is input capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 125 − pF C os output capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 75 − pF C rs feedback capacitance V GS = 0; VDS = 28 V; f = 1 MHz− 7 − pF Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. VDS =1 0V . handbook, halfpage4 MGP036 102 103 10410 T.C. (mV/K) ID (mA) Fig.5 Drain current as a function of gate-source voltage, typical values. VDS =1 0V . handbook, halfpage ID (A) 10 20

15 VGS (V)

125 °C Tj = 25 °C

Philips Semiconductors Product specification HF power MOS transistor BLF145 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 1.5 A; VGS =1 0V . handbook, halfpage 04 0 R DS(on) (Ω ) Tj (°C) 80 160 0.8 0.6 0.2 0.4 120 MGP038 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 2 0 4 0 240 180 120 MGP039 C (pF) VDS (V) C os C is Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 01 0 C rs (pF)

20 VDS (V) 30

Philips Semiconductors Product specification HF power MOS transistor BLF145 APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 25°C; Rth mb-h = 0.3 K/W; R1 = 26Ω ; unless otherwise specified. RF performance in SSB operation in a common source class-A circuit. Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. MODE OF OPERATION f (MHz) V DS (V) ID (A) PL (W) G P (dB) (dB) (note1) (dB) (note1) ZL (Ω ) SSB, class-A 28 28 1.3 8 (PEP) > 24 typ. 27 >− 40 typ.−43 <− 40 typ.−70 18.4+ j5.2 Fig.9 Power gain as a function of load power, typical values. Class-A operation; VDS = 28 V; ID = 1.3 A; R th mb-h= 0.3 K/W; f = 28 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage 10 20 30 MGP040 G p (dB) PL (W) PEP Fig.10 Third order intermodulation distortion as a function of load power, typical values. Class-A operation; VDS = 28 V; ID = 1.3 A; R th mb-h= 0.3 K/W; f = 28 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage 01 0 2 0 3 0 −20 −30 −50 −60 −40 MGP041 (dB) PL (W) PEP

Philips Semiconductors Product specification HF power MOS transistor BLF145 List of components (class-A test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 4.5), thickness1⁄16 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015 C2, C10 multilayer ceramic chip capacitor (note 1) 39 pF C4, C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C5, C6 multilayer ceramic chip capacitor (note 1) 27 pF C11 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228 L1 12 turns enamelled 0.5 mm copper wire 307 nH length 8 mm; int. dia. 4 mm L2, L3 stripline (note 2) 30 Ω length 15× 6m m L4 14 turns enamelled 1 mm copper wire 1039 nH length 14 mm; int. dia. 9 mm L5 9 turns enamelled 1 mm copper wire 305 nH length 10 mm; int. dia. 6 mm L6 grade 3B Ferroxcube wideband HF choke 4312 020 36640 R1 0.25 W metal film resistor 26 Ω R2 0.25 W metal film resistor 10 Ω Fig.11 Test circuit for class-A operation. f = 28 MHz. handbook, full pagewidth MGP042 input 50 Ω L1 L2 D.U.T. L3 L5 +VG L4R1C3 C11 C12 C10 +VD output 50 Ω

Philips Semiconductors Product specification HF power MOS transistor BLF145 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25°C; Rth mb-h = 0.3 K/W; R1 = 34Ω ; unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. MODE OF OPERATION f (MHz) V DS (V) IDQ (A) PL (W) G p (dB) ηD (%) (dB) (note 1) (dB) (note 1) ZL (Ω ) Ruggedness in class-AB operation The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P L = 30 W single tone under the following conditions: VDS = 28 V; f = 28 MHz; Th = 25°C; Rth mb-h = 0.3 K/W at rated load power. Fig.12 Power gain as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 0.25 A; R th mb-h= 0.3 K/W; f = 28 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage 20 40 60 MGP043 G p (dB) PL (W) Fig.13 Two tone efficiency as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 0.25 A; R th mb-h= 0.3 K/W; f = 28 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage 20 40 60 MGP044 ηD (%) PL (W)

Philips Semiconductors Product specification HF power MOS transistor BLF145 List of components (class-AB test circuit) Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 4.5), thickness1⁄16 mm. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 film dielectric trimmer 5 to 60 pF 2222 809 07011 C3, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C4, C5 multilayer ceramic chip capacitor (note 1) 27 pF C7, C10 multilayer ceramic chip capacitor (note 1) 39 pF C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015 C11 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228 L1 13 turns enamelled 0.5 mm copper wire 415 nH length 10 mm; int. dia. 5 mm L2, L3 stripline (note 2) 30 Ω length 15× 6m m L4 10 turns enamelled 1 mm copper wire 390 nH length 13 mm; int. dia. 7 mm L5 9 turns enamelled 1 mm copper wire 245 nH length 10 mm; int. dia. 5 mm L6 grade 3B Ferroxcube wideband HF choke 4312 020 36640 R1 0.5 W metal film resistor 34 Ω R2 0.25 W metal film resistor 10 Ω Fig.14 Test circuit for class-AB operation. f = 28 MHz. handbook, full pagewidth MGP045 input 50 Ω L1 L2 D.U.T. L3 L5 +VG L4R1C2 C11 C4 C7 C12 C10 +VD output 50 Ω

Philips Semiconductors Product specification HF power MOS transistor BLF145 Fig.15 Third order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 0.25 A; R th mb-h= 0.3 K/W; f = 28 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage −20 −30 −40 −50 20 40 60 MGP046 (dB) PL (W) Fig.16 Fifth order intermodulation distortion as a function of load power, typical values. Class-AB operation; VDS = 28 V; IDQ = 0.25 A; R th mb-h= 0.3 K/W; f = 28 MHz. solid line: Th =2 5°C. dotted line: Th =7 0°C. handbook, halfpage −20 −30 −40 −50 20 40 60 MGP047 (dB) PL (W) Fig.17 Power gain as a function of frequency, typical values. Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th =2 5°C; Rth mb-h= 0.3 K/W; R 1 =3 4Ω ;ZL = 8.9+ j1Ω . handbook, halfpage 03 0 MGP048 6 1 21 82 4 G p (dB) f (MHz) Table 1 Input impedance as a function of frequency Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th = 25°C; R th mb-h = 0.3 K/W; R1 = 34Ω ;ZL = 8.9 + j1Ω . f (MHz) Zi (Ω ) 1.5 32.9 − j2.2 3.0 32.4 − j4.3 6.0 30.7 − j8.1 10 27.4 − j11.9 15 32.9 − j14.6 20 18.5 − j15.4 25 15.1 − j15.3 30 12.5 − j14.6

Philips Semiconductors Product specification HF power MOS transistor BLF145 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF power MOS transistor BLF145 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.