BFT25A_15 JMNIC | Alldatasheet
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Technical content
- Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features
■ Low current consumption (100µA to 1 mA) ■ Low noise figure ■ Gold metallization ensures excellent reliability.
1.3 Quick reference data
[1] Ts is the temperature at the soldering point of the collector tab. BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 8 V VCEO collector-emitter voltage open base - - 5 V IC DC collector current - - 6.5 mA Ptot total power dissipation up to Ts = 165°C [1] --3 2 m W hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; Tamb =2 5°C; f = 500 MHz 3.5 5 - GHz G UM maximum unilateral power gain I C = 0.5 mA; VCE = 1 V; Tamb = 25°C; f = 1 GHz -1 5 -d B F noise figure Γ = Γopt; IC = 0.5 mA; VCE = 1 V; Tamb =2 5°C; f = 1 GHz - 1.8 - dB Γ = Γopt; IC = 1 mA; VCE = 1 V; Tamb =2 5°C; f = 1 GHz -2 -d B
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 2 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor 2. Pinning information 3. Ordering information 4. Marking [1] * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. 5. Limiting values [1] Ts is the temperature at the soldering point of the collector tab. Table 2: Discrete pinning Pin Description Simplified outline Symbol Code: V10 1 base 2 emitter 3 collector SOT23 sym021 Table 3: Ordering information Type number Package Name Description Version BFT25A - plastic surface mounted package; 3 leads SOT23 Table 4: Marking Type number Marking code[1] BFT25A 34* Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 8 V VCEO collector-emitter voltage open base - 5 V VEBO emitter-base voltage open collector - 2 V IC DC collector current - 6.5 mA Ptot total power dissipation up to Ts = 165°C [1] -3 2 m W Tstg storage temperature −65 +150 °C Tj junction temperature - 175 °C
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 3 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor 6. Thermal characteristics [1] Ts is the temperature at the soldering point of the collector tab. 7. Characteristics [1] G UM is the maximum unilateral power gain, assuming S12 is zero and Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-s) from junction to soldering point [1] 260 K/W Table 7: Characteristics Tj = 25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector cut-off current IE = 0 A; VCB = 5 V - - 50 nA hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; Tamb = 25°C; f = 500 MHz 3.5 5 - GHz C re feedback capacitance IC =ic = 0 A; VCB =1V ; f = 1 MHz - 0.3 0.45 pF G UM maximum unilateral power gain I C = 0.5 mA; VCE =1V ; Tamb =2 5°C; f = 1 GHz [1] -1 5 -d B F noise figure Γ = Γopt; IC = 0.5 mA; VCE = 1 V; Tamb =2 5°C; f = 1 GHz - 1.8 - dB Γ = Γopt; IC = 1 mA; VCE = 1 V; Tamb =2 5°C; f = 1 GHz -2 -d B G UM 10 log S21 1S 11 2–() 1S 22 2–()
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 4 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor Figure5,6,7 and 8,G UM = maximum unilateral power gain; MSG = maximum stable gain. VCE =1 V . Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector current. 0 50 100 200 mbg247 150 Ptot (mW) Ts (°C) mcd138 100 h FE IC (mA) 10−210−3 10−1 1 10 IC = ic = 0 A; f = 1 MHz. V CE = 1 V; Tamb =2 5°C; f = 500 MHz. Fig 3. Feedback capacitance as a function of collector-base voltage. Fig 4. Transition frequency as a function of collector current. 0 5 0.4 0.3 0.1 0.2 mcd103 1234 C re (pF) VCB (V) 12 4 mcd140 IC (mA) fT (GHz)
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 5 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor VCE = 1 V; f = 500 MHz. V CE = 1 V; f = 1 GHz. Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current. 0 0.5 1.0 2.0 mcd104 1.5 MSG G UMgain (dB) IC (mA) 0 0.5 1.0 2.0 mcd105 1.5 MSG G UM gain (dB) IC (mA) VCE = 1 V; IC = 0.5 mA. V CE = 1 V; IC = 1 mA. Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency. mcd106 gain (dB) f (MHz) MSG G UM G max 10 10 2 103 104 mcd107 gain (dB) f (MHz) MSG G UM G max 10 10 2 103 104
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 6 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor VCE =1 V . V CE =1 V . Fig 9. Minimum noise figure as a function of collector current. Fig 10. Minimum noise figure as a function of frequency. mcd145 10−1 11 0 F (dB) IC (mA) f =
2 GHz
1 GHz
500 MHz
F (dB) f (MHz) IC = 2 mA 1 mA 0.5 mA See Table8; Zo =5 0Ω . Average gain parameter: MSG = 14.5 dB. Fig 11. Noise circle figure. mcd108 0.2 0.5 0.2 0.5 0 50.50.2 21 10 + j − j stability circle pot. unst. region Fmin = 1.9 dB Γopt 11 dB 6 dB 4 dB MSG 14.5 dB 13 dB 2.5 dB
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 7 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor Table 8: Noise parameters f (MHz) VCE (V) IC (mA) Fmin (dB) Γopt R n/50 (mag) (ang) 500 1 1 1.9 0.79 4 2.5 See Table9; Zo =5 0Ω . Average gain parameter: MSG = 11.2 dB. Fig 12. Noise circle figure. Table 9: Noise parameters f (MHz) VCE (V) IC (mA) Fmin (dB) Γopt R n/50 (mag) (ang) 1000 1 1 2 0.74 8 2.6 mcd109 0.2 0.5 0.2 0.5 0 50.50.2 21 10 + j − j stability circle pot. unst. region MSG 11.2 dB 10 dB 8 dB 8 dB 4 dB 3 dB Fmin = 2 dB Γopt
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 8 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor See Table10; Zo =5 0Ω . Average gain parameter: MSG = 7.7 dB. Fig 13. Noise circle figure. Table 10: Noise parameters f (MHz) VCE (V) IC (mA) Fmin (dB) Γopt R n/50 (mag) (ang) 2000 1 1 2.4 0.72 26 1.7 mcd110 0.2 0.5 0.2 0.5 0 50.50.2 21 10 + j − j stability circle pot. unst. region 7 dB 5 dB 6 dB MSG 7.7 dB 3 dB 4 dB Fmin = 2.4 dB Γopt
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 9 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor VCE = 1 V; IC = 1 mA. Zo = 50Ω . Fig 14. Common emitter input reflection coefficient (S11). VCE = 1 V; IC = 1 mA. Fig 15. Common emitter forward transmission coefficient (S21). mcd111 0.2 0.5 0.2 0.5 0 50.50.2 21 10 + j − j ∞40 MHz
3 GHz
90° −90° −45°−135° 45°135° 0°0180° 5 4 3 2 1
40 MHz
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 10 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor VCE = 1 V; IC = 1 mA. Fig 16. Common emitter reverse transmission coefficient (S12). VCE = 1 V; IC = 1 mA. Zo = 50Ω . Fig 17. Common emitter output reflection coefficient (S22). mcd114 90° −90° −45°−135° 45°135° 0.2 0.5 0.2 0.5 0 50.50.2 21 10 + j − j
9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 11 of 14 Philips Semiconductors BFT25A NPN 5 GHz wideband transistor 8. Package outline Fig 18. Package outline. UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23
Philips Semiconductors BFT25A NPN 5 GHz wideband transistor 9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 12 of 14 9. Revision history Table 11: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes BFT25A_4 20040706 product data sheet - 9397 750 13399 BFT25A_CNV_3 Modifications:
- Converted from Lotus Manuscript format to TDM format.
- Marking code added. BFT25A_CNV_3 19971205 product specification - - -
Philips Semiconductors BFT25A NPN 5 GHz wideband transistor 9397 750 13399 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 6 July 2004 13 of 14 10. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 July 2004 Document order number: 9397 750 13399 Published in The Netherlands Philips Semiconductors BFT25A NPN 5 GHz wideband transistor 14. Contents