BFS520_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFS520 NPN 9 GHz wideband transistor

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520

FEATURES

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability
  • SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. PINNING PIN DESCRIPTION Code: N2 1 base 2 emitter 3 collector Fig.1 SOT323. handbook, 2 columns 3 MBC870Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage R BE =0 −− 15 V IC DC collector current −− 70 mA Ptot total power dissipation up to T s =1 1 8°C; note 1 −− 300 mW hFE DC current gain I C = 20 mA; VCE = 6 V; Tj=2 5°C 60 120 250 fT transition frequency I C = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 15 − dB F noise figure I c = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 1.1 1.6 dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage R BE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation up to T s =1 1 8°C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C, unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. IC = 20 mA; VCE = 6 V; RL =5 0Ω ; f = 900 MHz; Tamb =2 5°C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz. SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts =1 1 8°C; note 1 190 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCE =6 V −− 50 nA hFE DC current gain I C = 20mA; VCE = 6 V 60 120 250 C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 1 − pF C c collector capacitance I E =ie = 0; VCB = 6 V; f = 1 MHz − 0.5 − pF C re feedback capacitance I C = 0; VCB = 6 V; f = 1 MHz − 0.4 − pF fT transition frequency I C = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain (note 1) IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 15 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb =2 5°C − 9 − dB S212 insertion power gain I C = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C 13 14 − dB F noise figure Γs = Γopt;IC = 5 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.1 1.6 dB Γs = Γopt;IC = 20 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.6 2.1 dB Γs = Γopt;IC = 5 mA; VCE =6 V ; f = 2 GHz; Tamb =2 5°C − 1.9 − dB PL1 output power at 1 dB gain compression Ic = 20 mA; VCE = 6 V; RL =5 0Ω ; f = 900 MHz; Tamb =2 5°C − 17 − dBm ITO third order intercept point note 2 − 26 − dBm G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 MRC030 - 1 150 Ptot (mW) Ts (o C) Fig.3 DC current gain as a function of collector current. VCE = 6 V; Tj=2 5°C. handbook, halfpage MRC028 100 150 200 10−110−2 11 0 1 0 2 IC (mA) h FE Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage MRC021 0.1 0.2 0.3 0.4 0.5 0.6 0.7 02468 1 0 V (V)CB C re (pF) Fig.5 Transition frequency as a function of collector current. f = 1 GHz; Tamb =2 5°C. handbook, halfpage MRC022 1 10 100 fT (GHz) IC (mA) 3 V = 8 VCEV

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Maximum unilateral power gain as a function of collector current. VCE = 6 V; f = 900 MHz; Tamb =2 5°C. handbook, halfpage MRC027 01 02 03 0 G UM (dB) IC (mA) 3 V = 6 VCEV Fig.7 Gain as a function of collector current. VCE = 6 V; f = 2 GHz; Tamb =2 5°C. handbook, halfpage MRC026 0 1 02 03 0 MSG G UM G max gain (dB) IC (mA) Fig.8 Gain as a function of frequency. IC = 5 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC024 10−110−2 11 0 f (GHz) MSG G UM G max gain (dB) Fig.9 Gain as a function of frequency. IC = 20 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC025 −110−2 11 0 f (GHz) MSG G UM G max gain (dB)

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 Fig.10 Minimum noise figure as a function of collector current. VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC029 11 0 1 0 IC (mA) F (dB)

900 MHz

500 MHz

f = 2 GHz Fig.11 Minimum noise figure as a function of frequency. VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC023 −1 11 0 F (dB) 5 mA I = 20 mAC f (GHz)

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 Fig.12 Noise circle. IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo =5 0Ω . handbook, full pagewidth MRC077 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° stability circle pot. unst. region F = 3 dB F = 2 dB F = 1.5 dB ΓOPT Fmin = 1. 1 dB Fig.13 Noise circle. IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo =5 0Ω . handbook, full pagewidth MRC078 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° ΓMS G max = 9.1 dB G = 7 dB G = 8 dB G = 8,5 dB ΓOPT Fmin = 1. 9 dB F = 3 dB F = 2.5 dB F = 2 dB

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 Fig.14 Common emitter input reflection coefficient (S11). IC = 20 mA; VCE = 6 V; Zo =5 0Ω . handbook, full pagewidth MRC066 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

3 GHz

40 MHz

Fig.15 Common emitter forward transmission coefficient (S21). IC = 20 mA; VCE = 6 V. handbook, full pagewidth MRC067 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135°

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 Fig.16 Common emitter reverse transmission coefficient (S12). IC = 20 mA; VCE = 6 V. handbook, full pagewidth MRC060 180° −90° −135° −45° 45° 90° 135° handbook, full pagewidth MRC061 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° Fig.17 Common emitter output reflection coefficient (S22). IC = 20 mA; VCE = 6 V; Zo =5 0Ω .

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 PACKAGE OUTLINE UNIT A 1 max bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT323 SC-70 w Mbp D e A B Lp Q detail X c H E E v M A AB y 0 1 2 mm scale A X Plastic surface mounted package; 3 leads SOT323 97-02-28

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.