BFS505_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFS505 NPN 9 GHz wideband transistor

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505

FEATURES

  • Low current consumption
  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability
  • SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. PINNING PIN DESCRIPTION Code: N0 1 base 2 emitter 3 collector Fig.1 SOT323. handbook, 2 columns 3 MBC870Top view QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage R BE =0 −− 15 V IC DC collector current −− 18 mA Ptot total power dissipation up to T s = 147°C; note 1 −− 150 mW hFE DC current gain I C = 5 mA; VCE = 6 V; Tj=2 5°C 60 120 250 fT transition frequency I C = 5 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 17 − dB F noise figure I c = 1.25 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.2 1.7 dB

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage R BE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 18 mA Ptot total power dissipation up to T s = 147°C; note 1 − 150 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 147°C; note 1 190 K/W

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 CHARACTERISTICS Tj=2 5°C, unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. IC = 5 mA; VCE = 6 V; RL =5 0Ω ; f = 900 MHz; Tamb =2 5°C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2p−q) = 904 MHz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =6 V −− 50 nA hFE DC current gain I C = 5 mA; VCE = 6 V 60 120 250 C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 0.4 − pF C c collector capacitance I E =ie = 0; VCB = 6 V; f = 1 MHz − 0.4 − pF C re feedback capacitance I C = 0; VCB = 0.5 V; f = 1 MHz − 0.3 − pF fT transition frequency I C = 5 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain (note 1) IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 17 − dB IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb =2 5°C − 10 − dB S212 insertion power gain I C = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C 13 14 − dB F noise figure Γs = Γopt;IC = 1.25 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.2 1.7 dB Γs = Γopt;IC = 5 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.6 2.1 dB Γs = Γopt;IC = 1.25 mA; VCE =6 V ; f = 2 GHz; Tamb =2 5°C − 1.9 − dB PL1 output power at 1 dB gain compression Ic = 5 mA; VCE = 6 V; RL =5 0Ω ; f = 900 MHz; Tamb =2 5°C − 4 − dBm ITO third order intercept point note 2 − 10 − dBm G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 200 150 100 MRC020 - 1 150 Ptot (mW) Ts (o C) Fig.3 DC current gain as a function of collector current. VCE = 6 V; Tj=2 5°C. handbook, halfpage MRC019 100 150 200 −110−210−3 11 0 1 0 2 IC (mA) hFE Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage MRC011 0.1 0.2 0.3 0.4 0.5 02468 1 0 V (V)CB C re (pF) Fig.5 Transition frequency as a function of collector current. f = 1 GHz; Tamb =2 5°C. handbook, halfpage MRC013 −1 11 0 1 0 2 fT (GHz) IC (mA) 3 V = 8 VCEV

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Gain as a function of collector current. VCE = 6 V; f = 900 MHz; Tamb =2 5°C. handbook, halfpage MRC016 02468 MSG G UM gain (dB) IC (mA) Fig.7 Gain as a function of collector current. VCE = 6 V; f = 2 GHz; Tamb =2 5°C. handbook, halfpage MRC017 02468 MSG G UM G max gain (dB) IC (mA) Fig.8 Gain as a function of frequency. IC = 1.25 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC015 −2 10−1 11 0 f (GHz) MSG G UM G max gain (dB) Fig.9 Gain as a function of frequency. IC = 5 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC014 −110−2 11 0 f (GHz) MSG G UM G max gain (dB)

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 Fig.10 Minimum noise figure as a function of collector current. VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC018 −1 11 0 IC (mA) F (dB)

500 MHz

900 MHz

f = 2 GHz Fig.11 Minimum noise figure as a function of frequency. VCE = 6 V; Tamb =2 5°C. handbook, halfpage MRC012 −1 11 0 F (dB) 1.25 mA f (GHz) I = 5 mAC

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 Fig.12 Noise circle. IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Zo =5 0Ω . handbook, full pagewidth MRC073 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 stability circle pot. unst. region 0.5 1 5 180° −135° −90° −45° 45° 90° 135° F = 3 dB F = 2 dB Fmin = 1. 2 dB F = 1.5 dB ΓOPT handbook, full pagewidth MRC074 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 5 180° −135° −90° −45° 45° 90° 135° F = 3 dB F = 4 dB Fmin = 1.9 dB ΓOPT F = 2.5 dB Fig.13 Noise circle. IC = 1.25 mA; VCE = 6 V; f = 2 GHz; Zo =5 0Ω .

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 Fig.14 Common emitter input reflection coefficient (S11). IC = 5 mA; VCE = 6 V; Zo =5 0Ω . handbook, full pagewidth MRC056 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

3 GHz 40 MHz

Fig.15 Common emitter forward transmission coefficient (S21). IC = 5 mA; VCE = 6 V. handbook, full pagewidth MRC057 15 12 9 6 3 180° −135° −90° −45° 45° 90° 135°

3 GHz40 MHz

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 Fig.16 Common emitter reverse transmission coefficient (S12). IC = 5 mA; VCE = 6 V. handbook, full pagewidth MRC058 180° −90° −135° −45° 45° 90° 135°

3 GHz

40 MHz

handbook, full pagewidth MRC059 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° Fig.17 Common emitter output reflection coefficient (S22). IC = 5 mA; VCE = 6 V; Zo =5 0Ω .

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 PACKAGE OUTLINE UNIT A 1 max bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT323 SC-70 w Mbp D e A B Lp Q detail X c H E E v M A AB y 0 1 2 mm scale A X Plastic surface mounted package; 3 leads SOT323 97-02-28

Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.