BFS25A_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 December 1997 DISCRETE SEMICONDUCTORS BFS25A NPN 5 GHz wideband transistor

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A

FEATURES

  • Low current consumption
  • Low noise figure
  • Gold metallization ensures excellent reliability
  • SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. PINNING PIN DESCRIPTION Code: N6 1 base 2 emitter 3 collector Fig.1 SOT323. handbook, 2 columns 3 MBC870Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 8V VCEO collector-emitter voltage open base −− 5V IC DC collector current −− 6.5 mA Ptot total power dissipation up to T s = 170°C; note 1 −− 32 mW hFE DC current gain I C = 0.5 mA; VCE = 1 V; Tj=2 5°C 50 80 200 fT transition frequency I C = 1 mA; VCE = 1 V; f = 1 GHz; Tamb =2 5°C 3.5 5 − GHz G UM maximum unilateral power gain Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb =2 5°C − 13 − dB F noise figure I c = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb =2 5°C − 1.8 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 8V VCEO collector-emitter voltage open base − 5V VEBO emitter-base voltage open collector − 2V IC DC collector current − 6.5 mA Ptot total power dissipation up to T s = 170°C; note 1 − 32 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C, unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 170°C; note 1 190 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =5 V −− 50 nA hFE DC current gain I C = 0.5 mA; VCE = 1 V 50 80 200 C re feedback capacitance I C = 0; VCB = 1 V; f = 1 MHz − 0.3 0.45 pF fT transition frequency I C = 1 mA; VCE = 1 V; f = 1 GHz; Tamb =2 5°C 3.5 5 − GHz G UM maximum unilateral power gain (note 1) IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb =2 5°C − 13 − dB F noise figure Γs = Γopt;IC = 0.5 mA; VCE =1 V ; f = 1 GHz; Tamb =2 5°C − 1.8 − dB Γs = Γopt;IC = 1 mA; VCE =1 V ; f = 1 GHz; Tamb =2 5°C − 2 − dB G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 MRC038 - 1 150 P tot (mW) Ts (oC) Fig.3 DC current gain as a function of collector current. VCE = 1 V; Tj=2 5°C. handbook, halfpage MRC037 100 −110−210−3 11 0 IC (mA) h FE Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage MRC031 0.1 0.2 0.3 0.4 0.5 012345 V (V)CB C re (pF) Fig.5 Transition frequency as a function of collector current. f = 1 GHz; Tamb =2 5°C. handbook, halfpage MRC032 0 0.5 1 1.5 2 2.5 fT (GHz) IC (mA) 1 V = 3 VCEV

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Gain as a function of collector current. VCE = 1 V; f = 500 MHz; Tamb =2 5°C. handbook, halfpage MRC035 0 0.5 1 1.5 2 2.5 MSG G UM gain (dB) IC (mA) Fig.7 Maximum unilateral power gain as a function of collector current. f = 1 GHz; Tamb =2 5°C. handbook, halfpage 0 0.5 1 1.5 2 2.5 IC (mA) G UM (dB) MRC036 1 V = 3 VCEV Fig.8 Gain as a function of frequency. IC = 0.5 mA; VCE = 1 V; Tamb =2 5°C. handbook, halfpage MRC034 0.01 0.1 1 10 f (GHz) MSG G UM G max gain (dB) Fig.9 Gain as a function of frequency. IC = 1 mA; VCE = 1 V; Tamb =2 5°C. handbook, halfpage MRC033 10−110−2 11 0 MSG G UM G max gain (dB) f (GHz)

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A Fig.10 Minimum noise figure as a function of collector current. VCE = 1 V; Tamb =2 5°C. handbook, halfpage4 MCD145 10−1 11 0 F (dB) IC (mA) f = 2 GHz

1 GHz

500 MHz

Fig.11 Minimum noise figure as a function of frequency. VCE = 1 V; Tamb =2 5°C. handbook, halfpage4 MCD146 102 104103 F (dB) f (MHz) IC = 2 mA 1 mA 0.5 mA Fig.12 Noise circle. IC = 1 mA; VCE = 1 V; f = 500 MHz; Zo =5 0Ω . handbook, full pagewidth MRC075 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 2 5 180° −135° −90° −45° 45° 90° 135° stability circle pot. unst. region F = 6 dB F = 4 dB 10 dB 12 dB F = 2.5 dB MSG = 13.9 dB ΓOPT Fmin = 1.9 dB

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A Fig.13 Noise circle. IC = 1 mA; VCE = 1 V; f = 1 GHz; Zo =5 0Ω . handbook, full pagewidth MRA076 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 2 5 180° −135° −90° −45° 45° 90° 135° stability circle F = 6 dB Fmin = 2 dB ΓOPT F = 4 dB F = 3 dB MSG = 11.1 dB 8 dB 10 dB Fig.14 Noise circle. IC = 1 mA; VCE = 1 V; f = 2 GHz; Zo =5 0Ω . handbook, full pagewidth MRC051 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 2 5 180° −135° −90° −45° 45° 90° 135° F = 6 dB G max = 7. 5 dB F = 4 dB5 dB 7 dB 3 dB F = 2.5 dB Fmin = 2.4 dB ΓOPT

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A Fig.15 Common emitter input reflection coefficient (S11). IC = 1 mA; VCE = 1 V; Zo =5 0Ω . handbook, full pagewidth MRA052 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

3 GHz

40 MHz

Fig.16 Common emitter forward transmission coefficient (S21). IC = 1 mA; VCE = 1 V. handbook, full pagewidth MRC053 5 4 3 2 1 180° −135° −90° −45° 45° 90° 135°

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A Fig.17 Common emitter reverse transmission coefficient (S12). IC = 1 mA; VCE = 1 V. handbook, full pagewidth MRC054 0.5 0.4 0.3 0.2 0.1 180° −90° −135° −45° 45° 90° 135° Fig.18 Common emitter output reflection coefficient (S22). IC = 1 mA; VCE = 1 V; Zo =5 0Ω . handbook, full pagewidth MRC055 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A PACKAGE OUTLINE UNIT A 1 max bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT323 SC-70 w Mbp D e A B Lp Q detail X c H E E v M A AB y 0 1 2 mm scale A X Plastic surface mounted package; 3 leads SOT323 97-02-28

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.