BFS17W_15 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14

1995 Sep 04

NPN 1 GHz wideband transistor

1995 Sep 04 2

Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W

APPLICATIONS

Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners.

DESCRIPTION

Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 SOT323 handbook, 2 columns 3 MBC870Top view Marking code:E1 QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage −− 25 V VCEO collector-emitter voltage −− 15 V IC DC collector current −− 50 mA Ptot total power dissipation up to Ts =1 1 8°C; note 1 −− 300 mW hFE DC current gain I C = 2 mA; VCE = 1 V 25 90 − fT transition frequency I C = 25 mA; VCE =5V − 1.6 − GHz C c collector capacitance I E = 0; VCB = 10 V; f = 1 MHz − 0.8 1.5 pF C re feedback capacitance I C = 1 mA; VCE =5V ; f=1M H z − 0.75 − pF Tj junction temperature −− 175 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation Ts =1 1 8°C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C

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Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5°C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts =1 1 8°C; note 1 190 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =1 0V −− 10 nA hFE DC current gain I C = 2 mA; VCE =1V 2 5 9 0 − fT transition frequency I C = 25 mA; VCE =5V ; f = 500 MHz − 1.6 − GHz C c collector capacitance I E =ie = 0; VCB =1 0V ; f=1M H z − 0.8 1.5 pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f=1M H z − 2 − pF C re feedback capacitance I B =ib = 0; VCE =5V ; f = 1 MHz; Tamb =2 5°C − 0.75 − pF F noise figure I C = 2 mA; VCE =5V ; f = 500 MHz;ΓS = Γopt − 4.5 − dB Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 200 MLB587 150 T ( C)os P tot (mW) 300 400 100 Fig.3 DC current gain as a function of collector current; typical values. VCE =1V . handbook, halfpage60 MBG237 11 0 hFE IC (mA)10−1 102

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Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IB =ib = 0; f = 1 MHz. handbook, halfpage MBG238 1.5 0.5 C re (pF) VCB (V) Fig.5 Transition frequency as a function of collector current; typical values. Tamb =2 5°C; f = 500 MHz. handbook, halfpage 1.5 MBG239 2.5 101 5 V VCE = 10 V fT (GHz) IC (mA) 102 Fig.6 Minimum noise figure as function of frequency; typical values. VCE =1 0V . handbook, halfpage MBG240 F (dB) f (MHz) 10310210−3 10−2 10−1 101

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Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W PACKAGE OUTLINE Dimensions in mm. Fig.7 SOT323. handbook, full pagewidth 0.3 0.1 0.25 0.10 0.2 0.1 max 1.00 max MBC871 1.4 1.2 2.2 1.8 B A 1.35 1.15 0.4 0.2 BM0.2AM0.2 2.2 2.0

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Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.