BFS17A

BFS17A_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September1995 DISCRETE SEMICONDUCTORS BFS17A NPN 3 GHz wideband transistor

Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A

DESCRIPTION

NPN transistor in a plastic SOT23 package.

APPLICATIONS

• It is intended for RF applications such as oscillators in TV tuners. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 SOT23. Marking code: E2p. handbook, halfpage MSB003Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note to the Quick reference data and the Limiting values 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V IC DC collector current − 25 mA Ptot total power dissipation up to T s =7 0°C; note 1 − 300 mW fT transition frequency I C = 25 mA; VCE = 5 V; f = 500 MHz; Tamb =2 5°C 2.8 − GHz G UM maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 800 MHz 13.5 − dB F noise figure I C = 2 mA; VCE = 5 V; f = 800 MHz; Tamb =2 5°C 2.5 − dB VO output voltage d im = −60 dB; IC = 14 mA; VCE =1 0V ; R L =7 5Ω ; Tamb =2 5°C; f(p+q−r)= 793.25 MHz 150 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 25 mA ICM peak collector current − 50 mA Ptot total power dissipation up to T s =7 0°C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C

Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and dB. 2. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V O ; fp = 795.25 MHz; Vq =V O −6 dB; fq = 803.25 MHz; Vr =V O −6 dB; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts =7 0°C; note 1 260 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =1 0V −− 50 nA hFE DC current gain I C = 2 mA; VCE =1V ; Tamb =2 5°C2 5 9 0 − IC = 25 mA; VCE =1V ; Tamb =2 5°C2 5 9 0 − fT transition frequency I C = 25 mA; VCE = 5 V; f = 500 MHz; Tamb =2 5°C − 2.8 − GHz C c collector capacitance I E = 0; VCB = 10 V; f = 1 MHz; Tamb =2 5°C − 0.7 − pF C e emitter capacitance I C = 0; VEB = 0.5 V; f = 1 MHz − 1.25 − pF C re feedback capacitance I C = 0; VCE =5V ; f=1M H z − 0.6 − pF G UM maximum unilateral power gain note 1 IC = 14 mA; VCE = 10 V; f = 800 MHz− 13.5 − dB F noise figure I C = 2 mA; VCE =5V ; ZS =6 0Ω ; f = 800 MHz; Tamb =2 5°C − 2.5 − dB VO output voltage note 2 − 150 − mV G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. L 1=L 3=5 µH Ferroxcube choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. handbook, full pagewidth MBB251 18 Ω 1.5 nF 10 kΩ L2 1 nF75 Ω input 270 Ω 1 nF 1.5 nF 1 nF 0.68 pF3.3 pF DUT 75 Ω output VCCVBB Fig.3 DC current gain as a function of collector current. VCE = 1 V; Tamb =2 5°C. handbook, halfpage 100 10 30 MEA395

20 IC (mA)

Fig.4 Collector capacitance as a function of collector-base voltage. IE = 0; f = 1 MHz; Tamb =2 5°C. handbook, halfpage MEA903 0.5 4 8 12 16 VCB (V) C c (pF)

Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A Fig.5 Transition frequency as a function of collector current. VCE = 5 V; f = 500 MHz; Tamb =2 5°C. handbook, halfpage MEA904 20 40 IC (mA) fT (GHz) Fig.6 Minimum noise figure as a function of collector current. VCE = 5 V; Zs =6 0Ω ; f = 800 MHz; Tamb =2 5°C. handbook, halfpage MEA902 10 20 F (dB) IC (mA)

Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.7 SOT23. Dimensions in mm. handbook, full pagewidth MBC846 max o max o max o 1.1 max 0.55 0.45 0.150 0.0900.1 max M0.1 AB0.48 0.38 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 AA B 0.95 1.9