BFS17_2015 JMNIC | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFS17 NPN 1 GHz wideband transistor

Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17

DESCRIPTION

NPN transistor in a plastic SOT23 package.

APPLICATIONS

  • A wide range of RF applications such as: – Mixers and oscillators in TV tuners – RF communications equipment. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 SOT23. Marking code: E1p. handbook, halfpage MSB003Top view QUICK REFERENCED DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note to the Quick reference data and the Limiting values 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V IC DC collector current − 25 mA Ptot total power dissipation up to Ts =7 0°C; note 1 − 300 mW fT transition frequency I C = 25 mA; VCE = 5 V; f = 500 MHz; Tj=2 5°C1 − GHz F noise figure I C = 2 mA; VCE =5V ; RS =5 0Ω ; f = 500 MHz; Tj=2 5°C 4.5 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 25 mA ICM peak collector current − 50 mA Ptot total power dissipation up to T s =7 0°C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C

Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts =7 0°C; note 1 260 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =1 0V −− 10 nA hFE DC current gain I C = 2 mA; VCE =1V 2 5 9 0 − IC = 25 mA; VCE =1V 2 5 9 0 − fT transition frequency I C = 2 mA; VCE = 5 V; f = 500 MHz − 1 − GHz IC = 25 mA; VCE = 5 V; f = 500 MHz− 1.6 − GHz C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 0.8 1.5 pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz −− 2p F C re feedback capacitance I C = 1 mA; VCE = 5 V; f = 1 MHz − 0.65 − pF F noise figure I C = 2 mA; VCE =5V ; RS =5 0Ω ; f = 500 MHz − 4.5 − dB

Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 Fig.2 DC current gain as a function of collector current. VCE = 1 V; Tj=2 5°C. handbook, halfpage 100 10 30 MEA395

20 IC (mA)

Fig.3 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage MEA396 2.0 1.6 1.2 0.4 C c (pF) VCB (V)10 0.8 Fig.4 Transition frequency as a function of collector current. VCE = 5 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage MEA393 01 0 2 0 3 0 IC (mA) fT (GHz) Fig.5 Minimum noise figure as a function of collector current. VCE = 5 V; RS =5 0Ω ; f = 500 MHz; Tj=2 5°C. handbook, halfpage MEA397 1248 F (dB) 16 20 IC (mA)

Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.