BFR93AR

BFR93AR_15 JMNIC | Alldatasheet

Document overview

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Technical content

1.1 General description

NPN wideband transistor in a plastic SOT23 package.

1.2 Features

1.3 Applications

1.4 Quick reference data

Table 1. Quick reference data

BFR93AR_1 © NXP B.V. 2006. All rights reserved. [1] Tsp is the temperature at the solder point of the collector pin. Table 2. Pinning Table 3. Ordering information Table 4. Marking Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

BFR93AR_1 © NXP B.V. 2006. All rights reserved. [1] Tsp is the temperature at the solder point of the collector pin. [2] Measured on the same crystal in a SOT37 package (BFR91A). Table 6. Thermal characteristics Table 7. Characteristics

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 4 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor L1 = L3 = 5µH choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig 1. Intermodulation distortion and second harmonic MATV test circuit mbb251 18 W 1.5 nF 10 kW L2 1 nF 75 W input 270 W 1 nF 1.5 nF 1 nF 0.68 pF3.3 pF DUT 75 W output +VCC +VBB VCE =5V ; Tj=2 5°C. Fig 2. Power derating curve Fig 3. DC current gain as a function of collector current 0 50 100 200 400 300 100 200 mra702 150 Ptot (mW) Tsp (°C) mcd087 01 0 2 0 3 0 120 hFE IC (mA)

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 5 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor IE =ie = 0 mA; f = 1 MHz; Tj=2 5°C. V CE = 2 V; f = 500 MHz; Tj=2 5°C. Fig 4. Collector capacitance as a function of collector-base voltage; typical values Fig 5. Transition frequency as a function of collector current; typical values VCE = 8 V; f = 500 MHz. V CE = 8 V; f = 1 GHz. Fig 6. Gain as a function of collector current; typical values Fig 7. Gain as a function of collector current; typical values mbb252 048 1 6 0.8 0.6 0.4 0.2 C c (pF) VCB (V) mcd089 01 0 2 0 4 0 IC (mA) (GHz) fT mbb255 10 20 40 IC (mA) gain (dB) MSG G UM mbb256 10 20 40 gain (dB) IC (mA) MSG G UM

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 6 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor IC = 10 mA; VCE =8V . I C = 30 mA; VCE =8V . Fig 8. Gain as a function of frequency; typical values Fig 9. Gain as a function of frequency; typical values IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb =2 5°C. I C = 4 mA; VCE = 8 V; f = 800 MHz; Tamb =2 5°C. Fig 10. Circles of constant noise figure; typical values Fig 11. Circles of constant noise figure; typical values mbb257 10 10 2 103 104 gain (dB) f (MHz) MSG G UM G max mbb258 10 10 2 103 104 gain (dB) f (MHz) MSG G UM G max mbb253 02 0 4 0 8 0 -20 -40 G S (mS) BS (mS) mbb254 -10 -20 -30 20 40 60 G S (mS) BS (mS) 2.5 3.0 3.5 2.3 NF = 4.0 dB

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 7 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor VCE =8V . V CE =8V . Fig 12. Minimum noise figure as a function of collector current; typical values Fig 13. Minimum noise figure as a function of frequency; typical values VCE =8V ; VO = 425 mV (52.6 dBmV); fp + fq − fr = 793.25 MHz; Tamb =2 5°C. Measured in MATV test circuit; seeFigure1. VCE =8V ; VO = 200 mV (46 dBmV); fp + fq − fr = 810 MHz; Tamb =2 5°C. Measured in MATV test circuit; seeFigure1. Fig 14. Intermodulation distortion; typical values Fig 15. Second order intermodulation distortion; typical values mcd0944 101 NF (dB) IC (mA) f = 2 GHz

500 MHz

1 GHz

(dB) f (MHz) 5 mA 10 mA 104103102 IC = 30 mA mbb263 (dB) 01 0 2 0 4 0 -40 -65 -45 -50 -55 -60 IC (mA) IMD mbb264 01 0 2 0 4 0 -30 -55 -35 -40 -45 -50 IC (mA) IMD2 (dB)

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 8 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor IC = 30 mA; VCE =8V ; ZO =5 0Ω ;Tamb =2 5°C. Fig 16. Common emitter input reflection coefficient (S11) IC = 30 mA; VCE =8V ; Tamb =2 5°C. Fig 17. Common emitter forward transmission coefficient (S21) mbb259 0.2 0.5 0.2 0.5 + j - j 500 200

100 MHz

10.2 10 52 0.5 1200 800 1000 mbb261 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 100 10 20 30 200 500 8001000

1200 MHz

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 9 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor IC = 30 mA; VCE =8V ; Tamb =2 5°C. Fig 18. Common emitter reverse transmission coefficient (S12) IC = 30 mA; VCE =8V ; ZO =5 0Ω ;Tamb =2 5°C. Fig 19. Common emitter output reflection coefficient (S22) mbb262 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 200 1200 0.05 0.1 0.15 0.2 0.5 0.2 0.5 + j - j 10.2 10 520.5 1200 8001000 500 200

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 10 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 8. Package outline Fig 20. Package outline SOT23 UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 IEC JEDEC JEITA mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface-mounted package; 3 leads SOT23

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Table 8. Abbreviations Table 9. Revision history

BFR93AR_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 November 2006 12 of 13 NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 November 2006 Document identifier: BFR93AR_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 13. Contents