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BFR92AW_15 JMNIC | Alldatasheet

Document overview

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PDF pages: 12

Technical content

Product speciﬁcation Supersedes data of October 1992 File under discrete semiconductors, SC14

1995 Sep 18

NPN 5 GHz wideband transistor

1995 Sep 18 2

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW

FEATURES

High power gain
Gold metallization ensures excellent reliability
SOT323 (S-mini) package.

APPLICATIONS

It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Marking code: P2. Fig.1 SOT323 handbook, 2 columns 3 MBC870Top view QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V IC collector current (DC) −− 25 mA Ptot total power dissipation up to Ts =9 3°C; note 1 −− 300 mW hFE current gain I C = 15 mA; VCE =1 0V 4 0 9 0 − C re feedback capacitance I C = 0; VCE = 10 V; f = 1 MHz; Tamb =2 5°C − 0.35 − pF fT transition frequency I C = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz G UM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb =2 5°C − 14 − dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb =2 5°C − 8 − dB F noise ﬁgure I C = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt − 2 − dB Tj junction temperature −− 150 °C

1995 Sep 18 3

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 25 mA Ptot total power dissipation up to T s =9 3°C; see Fig.2; note 1− 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts =9 3°C; note 1 190 K/W Fig.2 Power derating curve 0 50 100 200 200 MLB540 150 T ( C)os P tot (mW) 300 400 100

1995 Sep 18 4

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW CHARACTERISTICS Tj=2 5°C (unless otherwise speciﬁed). Note 1. G UM is the maximum unilateral power gain, assuming s12 is zero and SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB =1 0V −− 50 nA hFE DC current gain I C = 15 mA; VCE = 10 V 40 90 − C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 0.6 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 0.9 − pF C re feedback capacitance I C = 0; VCE = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency I C = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz G UM maximum unilateral power gain; note 1 IC = 15 mA; VCE =1 0V ; f = 1 GHz; Tamb =2 5°C − 14 − dB IC = 15 mA; VCE =1 0V ; f = 2 GHz; Tamb =2 5°C − 8 − dB F noise ﬁgure I C = 5 mA; VCE =1 0V ; f = 1 GHz;Γs = Γopt − 2 − dB IC = 5 mA; VCE =1 0V ; f = 2 GHz;Γs = Γopt − 3 − dB G UM 10 s21 1s 11 2–() 1s 22

1995 Sep 18 5

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW Fig.3 DC current gain as a function of collector current; typical values. VCE =1 0V . handbook, halfpage 01 0 2 0 3 0 120 MCD074 hFE I (mA)C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. 1.0 MGC883 V (V)CB C re (pF) 0.8 0.6 0.4 0.2 12 16 Fig.5 Transition frequency as a function of collector current; typical values. VCE = 5 V; f = 500 MHz; Tamb =2 5°C. handbook, halfpage MGC884 101 fT (GHz) I (mA)C 10 2

1995 Sep 18 6

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW Fig.6 Gain as a function of collector current; typical values. VCE = 10 V; f = 500 MHz. handbook, halfpage 51 0 MGC885 15 20 gain (dB) I (mA)C MSG G UM Fig.7 Gain as a function of collector current; typical values. VCE = 10 V; f = 1 GHz. handbook, halfpage 51 0 MGC886 15 20 gain (dB) I (mA)C MSG G UM Fig.8 Gain as a function of frequency; typical values. VCE =1 0V ;IC = 5 mA. handbook, halfpage50 MGC887 102 103 104 gain (dB) f (MHz) G UM G max MSG Fig.9 Gain as a function of frequency; typical values. VCE =1 0V ;IC =1 5m A . handbook, halfpage50 MGC888 102 103 104 gain (dB) f (MHz) G UM G max MSG

1995 Sep 18 7

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =1 0V . handbook, halfpage MGC889 101 F (dB) I (mA)C f = 2 GHz

500 MHz

1 GHz

Fig.11 Minimum noise figure as a function of frequency; typical values. VCE =1 0V . handbook, halfpage MGC890 103102 F (dB) f (MHz) IC = 15 mA 5 mA 10 mA 104 Fig.12 Common emitter noise figure circles; typical values. f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo =5 0Ω . handbook, full pagewidth MGC891 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 2 5 180o 20.5 0.50.2 0.2 0.2 F = 2 dB optΓ F = 1.6 dBmin F = 4 dB F = 3 dB

1995 Sep 18 8

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW Fig.13 Common emitter noise figure circles; typical values. f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo =5 0Ω. handbook, full pagewidth MGC892 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 21 5 180o 0.5 0.2 0.2 0.5 0.2 (4) (3)(2) (1) (6) (5) (7) (8) (1) Γopt; Fmin = 2.1 dB. (2) F = 2.5 dB. (3) F = 3 dB. (4) F = 4 dB. (5) Γ ms ;G max = 15.7 dB. (6) G = 15 dB. (7) G = 14 dB. (8) G = 13 dB. Fig.14 Common emitter noise figure circles; typical values. f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo =5 0Ω. handbook, full pagewidth MGC893 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 21 5 180o 0.5 0.5 0.2 0.2 0.2 (3) (2) (1) (5) (4) (6) (7) (8) (1) Γopt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) Γ ms ;G max = 9.1 dB. (6) G = 8 dB. (7) G = 7 dB. (8) G = 6 dB.

1995 Sep 18 9

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW Fig.15 Common emitter input reflection coefficient (s11); typical values. VCE = 10 V; IC = 15 mA; Zo =5 0Ω . handbook, full pagewidth MGC894 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 45o 90o 135o 0.5 0.2 0.5 0.2 o180 0.2 1 0.5

40 MHz

3 GHz

Fig.16 Common emitter forward transmission coefficient (s21); typical values. VCE = 10 V; IC =1 5m A . handbook, full pagewidth MGC895 0 o 90o 135o 180 o 90o 50 40 30 20 10 45o 135o 45o

40 MHz 3 GHz

1995 Sep 18 10

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW Fig.17 Common emitter reverse transmission coefficient (s12); typical values. VCE = 10 V; IC =1 5m A . handbook, full pagewidth MGC896 0 o 90o 135o 180 o 90o 45o 135o 45o Fig.18 Common emitter output reflection coefficient (s22); typical values. VCE = 10 V; IC = 15 mA; Zo =5 0Ω . handbook, full pagewidth MGC897 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.5 0.2 0.5 2 0.2 1 5

1995 Sep 18 11

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW PACKAGE OUTLINE Fig.19 SOT323. Dimensions in mm. handbook, full pagewidth 0.25 0.10 B0.2 0.2 A A M M 0.65 1.3 2.2 1.8 0.40 0.30 B1.35 1.15 2.2 2.0 detail X X 1.1 max0.1 0.0 1.0 0.8 0.3 0.1 0.2 MBC871

1995 Sep 18 12

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFR92AW DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Short-form speciﬁcation The data in this speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Product Information

BFR92AW specifications and overview.

Summary

NPN 5 GHz wideband transistor

Description

NPN 5 GHz wideband transistor

Source title BFR92AW_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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