BFR106

BFR106_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFR106 NPN 5 GHz wideband transistor

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106

DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PINNING PIN DESCRIPTION Code: R7p 1 base 2 emitter 3 collector Fig.1 SOT23. age MSB003Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V IC DC collector current −− 100 mA Ptot total power dissipation up to T s =7 0°C; note 1 −− 500 mW hFE DC current gain I C = 50 mA; VCE =9 V ; Tamb =2 5°C2 5 8 0 − fT transition frequency I C = 50 mA; VCE = 9 V; f = 500 MHz; Tamb =2 5°C − 5 − GHz G UM maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb =2 5°C − 11.5 − dB Vo output voltage I C = 50 mA; VCE = 9 V; RL =7 5Ω ; Tamb =2 5°C; dim = −60 dB; f(p+q−r)= 793.25 MHz − 350 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3V IC DC collector current − 100 mA Ptot total power dissipation up to T s =7 0°C; note 1 − 500 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. IC = 30 mA; VCE = 6 V; RL =7 5Ω ;Tamb =2 5°C; f(p+q) = 810 MHz; Vo = 100 mV. 3. dim = −60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL =7 5Ω ;Tamb =2 5°C; f(p+q−r)= 793.25 MHz. SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts =7 0°C; note 1 210 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = 10 V −− 100 nA hFE DC current gain I C = 50 mA; VCE =9 V 2 5 8 0 − fT transition frequency I C = 50 mA; VCE = 9 V; f = 500 MHz; Tamb =2 5°C − 5 − GHz C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 1.5 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 4.5 − pF C re feedback capacitance I C = 0; VCE = 10 V; f = 1 MHz − 1.2 − pF G UM maximum unilateral power gain (note 1) IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb =2 5°C − 11.5 − dB F noise figure I C = 30 mA; VCE = 6 V; f = 800 MHz; Tamb =2 5°C − 3.5 − dB d2 second order intermodulation distortion note 2 −− 50 − dB Vo output voltage note 3 − 350 − mV G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 Fig.2 Power derating curve. 1/2 page (Datasheet) 22 mm s 0 50 100 200 200 MEA398 - 1 150 T ( C)o P tot (mW) 400 600 Fig.3 DC current gain as a function of collector current. VCE = 9 V; Tamb =2 5°C. handbook, halfpage 120 40 120 MBB774 I (mA)C h FE Fig.4 Transition frequency as a function of collector current. VCE = 9 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 04 08 0 MBB773 120I (mA)C (GHz) Tf Fig.5 Maximum unilateral power gain as a function of frequency. IC = 30 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage40 MEA399 102 103 104 f (MHz) G UM (dB)

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 handbook, full pagewidth MEA400 0.2 0.5 0.2 0.5 + j – j 800 100

40 MHz

10.2 10 520.5

2000 MHz

Fig.6 Common emitter input reflection coefficient (S11). IC = 30 mA; VCE = 6 V; Tamb =2 5°C. Zo =5 0Ω . handbook, full pagewidth MEA403 180° + ϕ − ϕ 30° 60° 90° 120° 150° 150° 120° 90° 60° 30° Fig.7 Common emitter forward transmission coefficient (S21). IC = 30 mA; VCE = 6 V; Tamb =2 5°C.

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 handbook, full pagewidth MEA402 180° + ϕ − ϕ 30° 60° 90° 120° 150° 150° 120° 90° 60° 30° Fig.8 Common emitter reverse transmission coefficient (S12). IC = 30 mA; VCE = 6 V; Tamb =2 5°C. handbook, full pagewidth MEA401 0.2 0.5 0.2 0.5 + j – j 10.2 10 520.5

800 MHz

Fig.9 Common emitter output reflection coefficient (S22). IC = 30 mA; VCE = 6 V; Tamb =2 5°C. Zo =5 0Ω .

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.