BFQ67W

BFQ67W_15 JMNIC | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFQ67W NPN 8 GHz wideband transistor

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W

FEATURES

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. PINNING PIN DESCRIPTION Code: V2 1 base 2 emitter 3 collector Fig.1 SOT323. handbook, 2 columns 3 MBC870Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 10 V IC DC collector current −− 50 mA Ptot total power dissipation up to T s =1 1 8°C; note 1 −− 300 mW hFE DC current gain I C = 15 mA; VCE = 5 V; Tj=2 5°C 60 100 − fT transition frequency I C = 15 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 8 − GHz G UM maximum unilateral power gain Ic = 15 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 13 − dB F noise figure I c = 5 mA; VCE = 8 V; f = 1 GHz − 1.3 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 50 mA Ptot total power dissipation up to T s =1 1 8°C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C, unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts =1 1 8°C; note 1 190 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =5 V −− 50 nA hFE DC current gain I C = 15 mA; VCE = 5 V 60 100 − C c collector capacitance I E =ie = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF C re feedback capacitance I C = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency I C = 15 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 8 − GHz G UM maximum unilateral power gain (note 1) IC = 15 mA; VCE = 8 V; f = 1 GHz Tamb =2 5°C − 13 − dB IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 8 − dB F noise figure Γs = Γopt;IC = 5 mA; VCE =8 V ; f=1G H z − 1.3 − dB Γs = Γopt;IC = 15 mA; VCE =8 V ; f=1G H z − 2 − dB Γs = Γopt;IC = 5 mA; VCE =8 V ; f=2G H z − 2.2 − dB IC = 5 mA; VCE =8 V ; f = 2 GHz; Zs =6 0Ω − 2.5 − dB Γs = Γopt;IC = 15 mA; VCE =8 V ; f=2G H z − 2.7 − dB IC = 5 mA; VCE =8 V ; f = 2 GHz; Zs =6 0Ω − 3 − dB G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 MRC045- 1 150 Ptot (mW) Ts (o C) Fig.3 DC current gain as a function of collector current. VCE = 5 V; Tj=2 5°C. handbook, halfpage 120 20 40 MBB301 60I (mA)C FEh Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage 0.2 0.4 0.6 0.8 048 1 2 MRC039 (pF) V (V)CB C re Fig.5 Transition frequency as a function of collector current. VCE = 8 V; f = 2 GHz; Tamb =2 5°C. handbook, halfpage 01 0 2 0 4 0 MBB303 I (mA)C (GHz) Tf

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Gain as a function of collector current. VCE = 8 V; f = 1 GHz; Tamb =2 5°C. handbook, halfpage MRC042 0 5 10 15 20 25 30 35 MSG G max gain (dB) IC (mA) G UM Fig.7 Gain as a function of frequency. IC = 5 mA; VCE = 8 V; Tamb =2 5°C. handbook, halfpage −2 10−1 11 0f (GHz) MRC040 MSG G UM G max gain (dB) Fig.8 Gain as a function of frequency. IC = 15 mA; VCE = 8 V; Tamb =2 5°C. handbook, halfpage MRC041 10−2 10−1 11 0f (GHz) MSG G UM G max gain (dB) Fig.9 Gain as a function of frequency. IC = 30 mA; VCE = 8 V; Tamb =2 5°C. handbook, halfpage MRC043 10−2 10−1 11 0 f (GHz) MSG G UM G max gain (dB)

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W Fig.10 Minimum noise figure as a function of collector current. VCE = 8 V; f = 1 GHz. handbook, halfpage MRC044 11 0 1 0 2 IC (mA) F (dB) handbook, full pagewidth MRC046 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° 135° 90° 45° −45° −90° −135° Fmin = 1.5 dB F = 2 dB F = 2.5 dB F = 3 dB opt Fig.11 Noise circle. IC = 5 mA; VCE = 8 V; f = 1 GHz; Zo =5 0Ω .

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W Fig.12 Common emitter input reflection coefficient (S11). IC = 15 mA; VCE = 8 V; Zo =5 0Ω . handbook, full pagewidth MRA047 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2

3 GHz

0.5 1 2 5 180° 135° 90° 45° −45° −90° −135°

40 MHz

Fig.13 Common emitter forward transmission coefficient (S21). IC = 15 mA; VCE = 8 V. handbook, full pagewidth MRC048 180° 135° 90° 45° −45° −90° −135° 50 40 30 20 10

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W Fig.14 Common emitter reverse transmission coefficient (S12). IC = 15 mA; VCE = 8 V. handbook, full pagewidth MRC049 180° 135° 90° 45° −45° −90° −135° Fig.15 Common emitter output reflection coefficient (S22). IC = 15 mA; VCE = 8 V; Zo =5 0Ω . handbook, full pagewidth MRC050 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° 135° 90° 45° −45° −90° −135°

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W PACKAGE OUTLINE UNIT A 1 max bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.11.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.20.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT323 SC-70 w Mbp D e A B Lp Q detail X c H E E v M A AB y 0 1 2 mm scale A X Plastic surface mounted package; 3 leads SOT323 97-02-28

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.