BFQ67_15 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14

1998 Aug 27

NPN 8 GHz wideband transistor book, halfpage M3D088

1998 Aug 27 2

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67

FEATURES

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability.

APPLICATIONS

Satellite TV tuners and RF portable communications equipment up to 2 GHz.

DESCRIPTION

Silicon NPN wideband transistor in a plastic SOT23 package. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 SOT23. alfpage MSB003Top view Marking code: V2p. QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 10 V IC collector current (DC) −− 50 mA Ptot total power dissipation T s ≤ 97 °C; note 1 −− 300 mW hFE DC current gain I C = 15 mA; VCE = 5 V 60 100 − fT transition frequency I C = 15 mA; VCE =8V − 8 − GHz G UM maximum unilateral power gain IC = 15 mA; VCE = 8 V; f = 1 GHz − 14 − dB F noise figure I C = 5 mA; VCE = 8 V; f = 1 GHz − 1.3 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation T s ≤ 97 °C; note 1 − 300 mW Tstg storage temperature range −65 +150 °C Tj junction temperature − 175 °C

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Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector lead. CHARACTERISTICS Tj=2 5°C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and . SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 260 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =5V −− 50 nA hFE DC current gain I C = 15 mA; VCE = 5 V 60 100 − C c collector capacitance I E =ie = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF C re feedback capacitance I C = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency I C = 15 mA; VCE =8V − 8 − GHz G UM maximum unilateral power gain (note 1) IC = 15 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz − 14 − dB IC = 15 mA; VCE =8V ; f=2G H z − 8 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz − 1.3 − dB Γs = Γopt; IC = 15 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz − 2.2 − dB IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz; Zs =6 0Ω − 2.5 − dB Γs = Γopt; IC = 15 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz − 2.7 − dB IC = 15 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz; Zs =6 0Ω − 3 − dB G UM 10 log S 21

1 S 11

–  1 S 22 –

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Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 150 MRA614 Ptot (mW) Ts (oC) Fig.3 DC current gain as a function of collector current, typical values. VCE =5V . handbook, halfpage 120 20 40 MBB301 60I (mA)C FEh Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. IC =ic = 0; f = 1 MHz. handbook, halfpage 0 5 10 15 VCB (V) C re (pF) 0.8 0.6 0.2 0.4 MRA607 Fig.5 Transition frequency as a function of collector current, typical values. VCE = 8 V; Tamb =2 5°C; f = 2 GHz. handbook, halfpage 01 0 2 0 4 0 MBB303 I (mA)C (GHz) Tf

1998 Aug 27 5

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 Fig.6 Gain as a function of collector current, typical values. VCE = 8 V; f = 1 GHz. handbook, halfpage 01 0 IC (mA) 20 30 gain (dB) MRA611 MSG G UM G max Fig.7 Gain as a function of frequency, typical values. VCE = 8 V; IC = 5 mA. handbook, halfpage50 gain (dB) MRA610 102 103 104 f (MHz) MSG G UM G max Fig.8 Gain as a function of frequency, typical values. VCE = 8 V; IC =1 5m A . handbook, halfpage50 gain (dB) MRA608 102 103 104 f (MHz) G max G UM MSG Fig.9 Gain as a function of frequency, typical values. VCE = 8 V; IC =3 0m A . handbook, halfpage50 gain (dB) MRA609 102 103 104 f (MHz) G max G UM MSG

1998 Aug 27 6

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 Fig.10 Minimum noise figure as a function of collector current, typical values. VCE =8V . handbook, halfpage4 100 MBB308 101 F (dB) I (mA)C f = 2 GHz

1 GHz

900 MHz

500 MHz

Fig.11 Noise figure as a function of collector current, typical values. VCE = 6 V; f = 900 MHz. handbook, halfpage5 F (dB) IC (mA) MRA613 1 10210 optimum source ZS = 60 Ω Fig.12 Minimum noise figure as a function of frequency, typical values. VCE =8V . handbook, halfpage4 MBB309 F (dB) f (MHz) 10 410 310 2 5 mA I = 30 mAC 15 mA Fig.13 Minimum noise figure as a function of frequency, typical values. VCE =1V . handbook, halfpage5 F (dB) f (MHz) MRA612 102 104103 IC = 0.5 mA 1 mA 2 mA

1998 Aug 27 7

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 handbook, full pagewidth MBC968 0.2 0.5 0.2 0.5 + j − j

3 GHz

40 MHz

10.2 5 21 0 Fig.14 Common emitter input reflection coefficient (S11), typical values. VCE = 8 V; IC = 15 mA; Zo =5 0Ω . Fig.15 Common emitter forward transmission coefficient (S21), typical values. VCE = 8 V; IC =1 5m A . handbook, full pagewidth MBC967 + ϕ − ϕ 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 0.2 0.1 3 GHz

1998 Aug 27 8

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 Fig.16 Common emitter reverse transmission coefficient (S12), typical values. VCE = 8 V; IC = 15 mA. handbook, full pagewidth MBC966 + ϕ − ϕ 30o 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 0.2 0.1 Fig.17 Common emitter output reflection coefficient (S22), typical values. VCE = 8 V; IC = 15 mA; Zo =5 0Ω . handbook, full pagewidth MBC965 0.2 0.5 0.2 0.5 + j − j 0.2 0.5 1 10 52

1998 Aug 27 9

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

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Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Aug 27 11

Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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