BFQ591_15 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of 2002 Jan 07

2002 Feb 04

NPN 7 GHz wideband transistor book, halfpage M3D109

2002 Feb 04 2

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591

FEATURES

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability.

APPLICATIONS

Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment.

DESCRIPTION

NPN wideband transistor in a SOT89 plastic package. MARKING PINNING TYPE NUMBER MARKING CODE BFQ591 BCp PIN DESCRIPTION 1 emitter 2 collector 3 base handbook, halfpage 12 3 Bottom view MBK514 Fig.1 Simplified outline (SOT89). QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V IC collector current (DC) −− 200 mA Ptot total power dissipation T s ≤ 90 °C; note 1 −− 2.25 W hFE DC current gain I C = 70 mA; VCE = 8 V 6 09 02 5 0 C re feedback capacitance I C = 0; VCB = 12 V; f = 1 MHz − 0.8 − pF fT transition frequency I C = 70 mA; VCE =1 2V ; f = 1 GHz − 7 − GHz G UM maximum unilateral power gain IC = 70 mA; VCE =1 2V ; f = 900 MHz; Tamb =2 5°C − 11 − dB |s21|2 insertion power gain I C = 70 mA; VCE =1 2V ; f = 900 MHz; Tamb =2 5°C − 10 − dB

2002 Feb 04 3

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 200 mA Ptot total power dissipation T s ≤ 90 °C; note 1 − 2.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point Ts ≤ 90 °C; note 1 38 K/W

2002 Feb 04 4

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 CHARACTERISTICS Tj=2 5°C; unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming s12 is zero and . 2. dim = 60 dB (DIN45004B); Vp =V o; Vq =V o −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q+r)= 793.25 MHz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE =0 −− 20 V V(BR)CES collector-emitter breakdown voltage IC = 0.1 mA; IB =0 −− 15 V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC =0 −− 3V ICBO collector-base leakage current IE = 0; VCB =1 0 −− 100 nA hFE DC current gain I C =7 0m A; VCE = 8 V 6 09 02 5 0 C re feedback capacitance I C = 0; VCB = 12 V; f = 1 MHz − 0.8 − pF fT transition frequency I C = 70 mA; VCE =1 2V ; f = 1 GHz − 7 − GHz G UM maximum unilateral power gain; note 1 IC = 70 mA; VCE =1 2V ; Tamb =2 5°C f = 900 MHz − 11 − dB f = 2 GHz − 5.5 − dB |s21|2 insertion power gain I C = 70 mA; VCE =1 2V ; f = 1 GHz; Tamb =2 5°C − 10 − dB Vo output voltage note 2 − 700 − mV G UM 10 log s21 1s 11 2–() 1s 22 2–()

2002 Feb 04 5

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage Ts (°C) 50 100 200 150 MLD796 Ptot (W) Fig.2 Power derating curve. handbook, halfpage 250 100 150 200 MRA749 10−2 10−1 11 0 1 0 2 hFE IC (mA) Fig.3 DC current gain as a function of collector current; typical values. VCE =1 2V . handbook, halfpage VCB (V) 1.2 0.8 0.4 48 1 6 12 MLD797 C re (pF) Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. handbook, halfpage8 MLD798 fT (GHz) IC (mA) 10 10 2 Fig.5 Transition frequency as a function of collector current. VCE = 12 V; f = 1 GHz.

2002 Feb 04 6

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage G max 40 80 IC (mA) gain (dB) 120 MLD799 G UM Fig.6 Gain as a function of collector current; typical values. VCE = 12 V; f = 900 MHz. handbook, halfpage MSG G UM 40 80 IC (mA) gain (dB) 120 MLD800 Fig.7 Gain as a function of collector current; typical values. VCE = 12 V; f = 2 GHz. handbook, halfpage40 MLD801 f (MHz) gain (dB) 104103102 G UM MSG MSG G max Fig.8 Gain as a function of frequency; typical values. IC = 70 mA; VCE =1 2V .

2002 Feb 04 7

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 handbook, halfpage 04 0 8 0 IC (mA) dim (dB) 120 -30 -40 -60 -70 -50 MLD802 Fig.9 Intermodulation distortion as function of collector current; typical values. Vo = 700 mV; VCE = 12 V; Tamb =2 5°C; f(p+q+r)= 793.25 MHz. handbook, halfpage 04 0 8 0 IC (mA) (dB) 120 -30 -80 -40 -50 -60 -70 MLD803 Fig.10 Second order intermodulation distortion as function of collector current; typical values. Vo = 316 mV; VCE = 12 V; f(p+q)= 810 MHz.

2002 Feb 04 8

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 SPICE parameters for the BFQ591 die. Note 1. These parameters have not been extracted, the default values are shown. List of components(see Fig.11) SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.341 fA 2 BF 123.5 − 3 NF .988 − 4 VAF 75.85 V 5 IKF 9.656 mA 6 ISE 232.2 fA 7 NE 2.134 − 8 BR 10.22 − 9 NR 1.016 − 10 VAR 1.992 V 11 IKR 294.1 mA 12 ISC 211.0 aA 13 NC 997.2 − 14 RB 5.00 Ω 15 IRB 1.000 µA 16 RBM 5.00 Ω 17 RE 1.275 Ω 18 RC 920.6 Ω (1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 3.821 pF 23 VJE 600.0 mV 24 MJE 348.5 − 25 TF 13.60 ps 26 XTF 71.73 − 27 VTF 10.28 V 28 ITF 1.929 mA 29 PTF 0.000 deg 30 CJC 1.409 fF 31 VJC 219.4 mV 32 MJC 166.5 − 33 XCJ 2.340 − 34 TR 543.7 ps (1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 733.2 − DESIGNATION VALUE UNIT C be 16 fF C cb 150 fF C ce 150 fF L1 1 nH L2 0.01 nH L3 1 nH L B 1.2 nH LE 1.2 nH handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 C cb C be ce C QL B = 50;QLE = 50;QLB,E( f )=Q LB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.11 Package equivalent circuit SOT89.

2002 Feb 04 9

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ DIMENSIONS (mm are the original dimensions) SOT89 TO-243 SC-62 97-02-28 99-09-13 w M e E H E B 0 2 4 mm scale c D L A Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 12 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 H E 4.25 3.75 e 3.0 w 0.13 1.5 L min. 0.8 b2b1 0.53 0.40 1.8 1.4

2002 Feb 04 10

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2002 Feb 04 11

Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 NOTES

© Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands 613516/03/pp12 Date of release:2002 Feb 04 Document order number: 9397 750 09271