BFQ19_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFQ19 NPN 5 GHz wideband transistor

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19

DESCRIPTION

NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers etc. The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN DESCRIPTION Code: FB 1 emitter 2 collector 3 base Fig.1 SOT89. page 12 3 Bottom view MBK514 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base − 15 V IC DC collector current − 100 mA Ptot total power dissipation up to T s = 145°C (note 1) − 1W fT transition frequency I c = 50 mA; VCE = 10 V; f = 500 MHz; Tj=2 5°C 5.5 − GHz C re feedback capacitance I c = 10 mA; VCE = 10 V; f = 1 MHz; Tamb =2 5°C 1.3 − pF F noise figure I c = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb =2 5°C 3.3 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3.3 V IC DC collector current − 100 mA ICM peak collector current f > 1 MHz − 150 mA Ptot total power dissipation up to T s = 145°C (note 1) − 1W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 145°C (note 1) 30 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = 10 V −− 100 nA hFE DC current gain I C = 70 mA; VCE = 10 V 25 80 − C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 1.6 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 5 − pF C re feedback capacitance I C = 10 mA; VCE = 10 V; f = 1 MHz; Tamb =2 5°C − 1.3 − pF fT transition frequency I C = 70 mA; VCE = 10 V; f = 500 MHz 4.4 5.5 − GHz G UM maximum unilateral power gain (note 1) IC = 50 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C − 11.5 − dB IC = 50 mA; VCE = 10 V; f = 800 MHz; Tamb =2 5°C − 7.5 − dB F noise figure I C = 50 mA; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb =2 5°C − 3.3 − dB G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 Fig.2 DC current gain as a function of collector current. VCE = 10 V; Tj=2 5°C. handbook, halfpage 120 40 120 MBB774 I (mA)C h FE Fig.3 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 0 5 10 20 MBB830 C c (pF) V CB (V) Fig.4 Transition frequency as a function of collector current. VCE = 10 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 04 08 0 MBB773 120I (mA)C (GHz) Tf

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ DIMENSIONS (mm are the original dimensions) SOT89 97-02-28 w M e E H E B 0 2 4 mm scale c D L A Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 12 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 H E 4.25 3.75 e 3.0 w 0.13 1.5 L min. 0.8 b2b1 0.53 0.40 1.8 1.4

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.