BFQ18A_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFQ18A NPN 4 GHz wideband transistor

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A

DESCRIPTION

NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes. PINNING PIN DESCRIPTION Code: FF 1 emitter 2 collector 3 base Fig.1 SOT89. page 12 3 Bottom view MBK514 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V IC DC collector current − 150 mA Ptot total power dissipation up to T s = 155°C (note 1) − 1W fT transition frequency I C = 100 mA; VCE = 10 V; f = 500 MHz; Tj = 25°C 4 − GHz C re feedback capacitance I C = 0; VCE = 10 V; f = 10.7 MHz 1.2 − pF dim intermodulation distortion I C = 80 mA; VCE = 10 V; RL =7 5Ω ; Vo = 700 mV; measured at f(p+q-r)= 793.25 MHz −− 60 dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 150 mA Ptot total power dissipation up to T s = 155°C (note 1) − 1W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25°C unless otherwise specified. Note 1. Ic = 80 mA; VCE = 10 V; RL =7 5Ω ; Vp =V o = 700 mV; fp =795.25 MHz; Vq =V o −6 dB; fq = 803.25 MHz; Vr =V o −6 dB; fr = 805.25 MHz; measured at f(p+q-r)= 793.25 MHz. SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 155°C (note 1) 20 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT hFE DC current gain I C = 100 mA; VCE = 10 V 25 − C c collector capacitance I E = ie = 0; VCB = 10 V; f = 1 MHz − 2p F C e emitter capacitance I C = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 pF C re feedback capacitance I C = 0; VCE = 10 V; f = 10.7 MHz − 1.2 pF fT transition frequency I C = 100 mA; VCE = 10 V; f = 500 MHz− 4 GHz dim intermodulation distortion (see Fig.2) note 1 −− 60 dB

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A Fig.2 Intermodulation distortion MATV test circuit. f = 40− 860 MHz. handbook, halfpage MBB829 12 Ω 10 nF 0.68 pF DUT V CC VBB R L 1.5 nF 2.2 nF 5 µH 5 µH 200 Ω 10 kΩ L1 4.7 nF 2.2 nF 0.68 pF 10 nF Fig.3 DC current gain as a function of collector current. VCE = 10 V; Tj=2 5°C. handbook, halfpage 120 40 80 160 MBB361 120 I (mA)C FEh Fig.4 Transition frequency as a function of collector current. VCE = 10 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 0 40 80 160 MBB357 120 I (mA)C (GHz) Tf

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ DIMENSIONS (mm are the original dimensions) SOT89 97-02-28 w M e E H E B 0 2 4 mm scale c D L A Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 12 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 H E 4.25 3.75 e 3.0 w 0.13 1.5 L min. 0.8 b2b1 0.53 0.40 1.8 1.4

Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.