BFM505_15 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14

1996 Oct 08

Dual NPN wideband transistor

1996 Oct 08 2

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505

FEATURES

  • Small size
  • Temperature and hFE matched
  • Low noise and high gain
  • High gain at low current and low capacitance at low voltage
  • Gold metallization ensures excellent reliability.

APPLICATIONS

  • Oscillator and buffer amplifiers
  • Balanced amplifiers
  • LNA/mixer.

DESCRIPTION

Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. PINNING - SOT363A PIN SYMBOL DESCRIPTION 1 base 1 2e 1 emitter 1 3c 2 collector 2 4b 2 base 2 5e 2 emitter 2 6c 1 collector 1 Fig.1 Simplified outline and symbol. handbook, halfpage MAM210 1 3 Top view c1 c2 e1 e2 b1 b2 Marking code: N0. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor C re feedback capacitance I e = 0; VCB = 3 V; f = 1 MHz − 0.22 − pF fT transition frequency I C = 5 mA; VCE = 3V; f = 1 GHz − 9 − GHz insertion power gain I C = 5 mA; VCE = 3 V; f = 900 MHz; Tamb =2 5°C 14 15 − dB G UM maximum unilateral power gain IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb =2 5°C − 17 − dB F noise figure I C = 1 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt − 1.1 1.6 dB R th j-s thermal resistance from junction to soldering point single loaded −− 230 K/W double loaded −− 115 K/W s21

1996 Oct 08 3

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 LIMITING VALUES In accordance with the Absolute Maximum System IEC 134. THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 18 mA Ptot total power dissipation up to T s =1 1 8°C; note 1 − 500 mW Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point; note 1 single loaded 230 K/W double loaded 115 K/W

1996 Oct 08 4

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 CHARACTERISTICS Tj=2 5°C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming s12 is zero. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor V(BR)CBO collector-base breakdown voltage IC = 2.5µA; IE =0 2 0 −− V V(BR)CEO collector-emitter breakdown voltage IC =1 0µA; IB =0 8 −− V V(BR)EBO emitter-base breakdown voltage IE = 2.5µA; IC = 0 2.5 −− V ICBO collector-base leakage current VCB =6V ; IE =0 −− 50 nA hFE DC current gain I C = 5 mA; VCE = 6 V 60 120 250 DC characteristics of the dual transistor ΔhFE ratio of highest and lowest DC current gain IC1 =IC2 = 5 mA; VCE1 =V CE2 =6V 1 1.2 − ΔVBEO difference between highest and lowest base-emitter voltage (offset voltage) I E1 =IE2 = 10 mA; Tamb =2 5°C0 1 − mV AC characteristics of any single transistor fT transition frequency I C = 5 mA; VCE = 3 V; f = 1 GHz− 9 − GHz C c collector capacitance I E =ie = 0; VCB =3V ;f=1M H z − 0.31 − pF C re feedback capacitance I C = 0; VCB =3V ;f=1M H z − 0.22 − pF G UM maximum unilateral power gain; note 1 IC = 5 mA; VCE =3V ; Tamb =2 5°C; f = 900 MHz − 17 − dB IC = 5 mA; VCE =3V ; Tamb =2 5°C; f = 2 GHz − 10 − dB insertion power gain I C = 5 mA; VCE =3V ; f = 900 MHz; Tamb =2 5°C 14 15 − dB F noise figure I C = 5 mA; VCE =3V ; f = 900 MHz;ΓS = Γopt − 1.4 1.8 dB IC = 5 mA; VCE =3V ; f = 2 GHz;ΓS = Γopt − 1.9 − dB IC = 1 mA; VCE =3V ; f = 900 MHz;ΓS = Γopt − 1.1 1.6 dB s21 G UM 10 s21 1s 11 2–() 1s 22

1996 Oct 08 5

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 Fig.2 Power derating as a function of soldering point temperature; typical values. handbook, halfpage 0 50 100 200 400 MBG208 150 600 200 Ptot (mW) Ts (oC) double loaded single loaded Fig.3 Transition frequency as a function of collector current; typical values. f = 1 GHz; Tamb =2 5°C. handbook, halfpage 10−1 101 fT (GHz) IC (mA) MGD687 VCE = 6V 3 V Fig.4 DC current gain as a function of collector current; typical values. VCE =6V . handbook, halfpage MRA719 250 100 150 200 hFE IC (mA) −2 10−110−3 1 10 102 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. handbook, halfpage 02 1 0 0.4 C re (pF) 0.3 0.1 0.2 46 8 VCB (V) MRA720

1996 Oct 08 6

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 Fig.6 Gain as a function of collector current; typical values. f = 900 MHz; VCE =3V . handbook, halfpage 048 1 2 MGG199 IC (mA) gain (dB) G UM MSG Fig.7 Gain as a function of collector current; typical values. f = 2 GHz; VCE =3V . handbook, halfpage 048 1 2 MGG200 IC (mA) gain (dB) G UM MSG/G max Fig.8 Gain as a function of frequency; typical values. IC = 1 mA; VCE =3V . handbook, halfpage50 MGG201 102 103 10410 f (MHz) gain (dB) G UM MSG/G max Fig.9 Gain as a function of frequency; typical values. IC = 5 mA; VCE =3V . handbook, halfpage50 MGG202 102 103 10410 f (MHz) gain (dB) G UM MSG/G max

1996 Oct 08 7

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =3V . handbook, halfpage 10−1 101 F (dB) IC (mA)

1000 MHz

2000 MHz

500 MHz

900 MHz

Fig.11 Associated available gain as a function of collector current; typical values. VCE =3V . handbook, halfpage 10−1 101 G ass (dB) IC (mA) MGD686 f = 900 MHz 1GHz

2 GHz

Fig.12 Minimum noise figure as a function of frequency; typical values. VCE =3V . handbook, halfpage MGC768 102 103 104 F (dB) f (MHz) 1.25 mA 5 mA Fig.13 Associated available gain as a function of frequency; typical values. VCE =3V . handbook, halfpage MGC769 102 103 104 G ass (dB) f (MHz) 5 mAIC = 1.25 mA

1996 Oct 08 8

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505

APPLICATION INFORMATION

SPICE parameters for any single BFM505 die Note 1. These parameters have not been extracted, the default values are shown. SEQUENCE No. PARAMETER VALUE UNIT 1 IS 134.1 aA 2 BF 180.0 − 3 NF 0.988 − 4 VAF 38.34 V 5 IKF 150.0 mA 6 ISE 27.81 fA 7 NE 2.051 − 8 BR 55.19 − 9 NR 0.982 − 10 VAR 2.459 V 11 IKR 2.920 mA 12 ISC 17.45 aA 13 NC 1.062 − 14 RB 20.00 Ω 15 IRB 1.000 µA 16 RBM 20.00 Ω 17 RE 1.171 Ω 18 RC 4.350 Ω (1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 284.7 fF 23 VJE 600.0 mV 24 MJE 0.303 − 25 TF 7.037 ps 26 XTF 12.34 − 27 VTF 1.701 V 28 ITF 30.64 mA 29 PTF 0.000 deg 30 CJC 242.4 fF 31 VJC 188.6 mV 32 MJC 0.041 − 33 XCJC 0.130 − 34 TR 1.332 ns (1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 0.897 − Fig.14 Package equivalent circuit SOT363A (inductance only). handbook, halfpage B1 B2 C1 C2 LB LB E1 E2 MBG188 LP LP T1 T2 LELE Fig.15 Package capacitance (fF) between indicated nodes. 3E2 27 6 0.4 0.6 1.0 LP Lead inductances (nH) LB LE 3 17 36 B1 E2 E1 B2 C2 48 36 17 3 MBG189

1996 Oct 08 9

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PACKAGE OUTLINE Fig.16 SOT363. Dimensions in mm. handbook, full pagewidth MSA368 1.1 0.8 0.1 0.0 0.25 0.10 0.3 0.1 A AM0.2 0.9 0.6 0.2 1.35 1.15 0.65 0.65 2.2 2.0 0.3 0.2 (6x) 2.2 1.8 B BM0.2

1996 Oct 08 10

Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.