BFG97

BFG97_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFG97 NPN 5 GHz wideband transistor

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97

DESCRIPTION

NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP complement is the BFG31. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. age 4 123 MSB002 - 1Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V IC DC collector current −− 100 mA Ptot total power dissipation up to T s = 125°C (note 1) −− 1W hFE DC current gain I C = 70 mA; VCE = 10 V; Tj=2 5°C2 5 8 0 − fT transition frequency I C = 70 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C − 5.5 − GHz G UM maximum unilateral power gain IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C − 16 − dB IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb =2 5°C − 12 − dB Vo output voltage I C = 70 mA; VCE = 10 V; dim =−60 dB; RL =7 5Ω ; f(p+q−r) = 793.25 MHz; Tamb =2 5°C − 700 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3V IC DC collector current − 100 mA Ptot total power dissipation up to T s = 125°C (note 1) − 1W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C Vp =V o at dim = −60 dB; Vq =V o −6 dB; fp = 445.25 MHz; Vr =V o −6 dB; fq = 453.25 MHz; fr = 455.25 MHz; measured at f(p+q−r)= 443.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C Vp =V o at dim = −60 dB; Vq =V o −6 dB; fp = 795.25 MHz; Vr =V o −6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz. 4. IC = 70 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V q =V o = 50 dBmV; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz. 5. IC = 70 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V q =V o = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 125°C (note 1) 50 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = 10 V −− 100 nA hFE DC current gain I C = 70 mA; VCE = 10 V 25 80 − fT transition frequency I C = 70 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C − 5.5 − GHz C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 1.5 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 6.5 − pF C re feedback capacitance I C = 0; VCE = 10 V; f = 1 MHz − 1 − pF G UM maximum unilateral power gain (note 1) IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C − 16 − dB IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb =2 5°C − 12 − dB Vo output voltage note 2 − 750 − mV note 3 − 700 − mV d2 second order intermodulation distortion note 4 −− 56 − dB note 5 −− 53 − dB G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 List of components (see test circuit) Notes The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness1⁄16 inch; thickness of copper sheet 2× 35 µm. 1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB. DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C2, C3, C7, C8 multilayer ceramic capacitor 10 nF 2222 590 08627 C1, C4, C6 multilayer ceramic capacitor 1.2 pF 2222 851 12128 C5 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103 L1 (note 1) 0.5 turns 0.4 mm copper wire int. dia. 3 mm L2 microstripline 75 Ω length 14 mm; width 2.5 mm L3 microstripline 75 Ω length 8 mm; width 2.5 mm L4, L5 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm; winding pitch 1 mm L6 microstripline 75 Ω length 19 mm; width 2.5 mm L7 Ferroxcube choke 5 µH 3122 108 20153 R1 metal film resistor 10 k Ω 2322 180 73103 R2 (note 1) metal film resistor 220 Ω 2322 180 73221 R3, R4 metal film resistor 30 Ω 2322 180 73309 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. handbook, full pagewidth MBB807 L1C1 output 75 Ω DUTinput 75 Ω VCC VBB C8L6L5 C4L2 R3 R4

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board. handbook, full pagewidth MEA970 80 mm 60 mm mounting screws M 2.5 (8x) handbook, full pagewidth MEA969 60 mm 80 mm handbook, full pagewidth MEA971 input output VCCVBB L2 L6 R4 C5 L5L1 C6C4 Ω Ω

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 0.8 0.6 0.2 0.4 MBB797 150 T ( C)os P tot (W) 1.0 1.2 Fig.5 DC current gain as a function of collector current. VCE = 10 V; Tj=2 5°C. handbook, halfpage 120 40 120 MBB774 I (mA)C h FE Fig.6 Feedback capacitance as a function of collector-emitter voltage. IE = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage V (V)CE MBB798 10 20 C re (pF) Fig.7 Transition frequency as a function of collector current. VCE = 10 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 04 08 0 MBB773 120I (mA)C (GHz) Tf

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.8 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 750 mV; f(p+q−r)= 443.25 MHz; Tamb =2 5°C. handbook, halfpage 20 120 MBB799 40 60 80 100 d im (dB) I (mA)C Fig.9 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 700 mV; f(p+q−r)= 793.25 MHz; Tamb =2 5°C. handbook, halfpage MBB796 20 120 40 60 80 100 d im (dB) I (mA)C Fig.10 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb =2 5°C. handbook, halfpage MBB800 20 120 40 60 80 100 (dB) I (mA)C Fig.11 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb =2 5°C. handbook, halfpage MBB801 20 120 40 60 80 100 (dB) I (mA)C

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.12 Load impedance as a function of output power. VCE = 6 V; f = 900 MHz. handbook, halfpage 0 0.25 1 –20 MEA963 0.50 POUT (W) 0.75 Z (Ω ) L R L X L –10 Fig.13 Load impedance as a function of output power. VCE = 7.5 V; f = 900 MHz. handbook, halfpage 0 0.25 1 MEA964 0.50 POUT (W) 0.75 Z (Ω ) L X L–10 R L Fig.14 Load impedance as a function of output power. VCE = 10 V; f = 900 MHz. handbook, halfpage 0 0.25 1 MEA965 0.50 POUT (W) 0.75 Z (Ω ) L X L –10 R L

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.15 Input impedance as a function of output power. VCE = 6 V; f = 900 MHz. handbook, halfpage 0 0.25 1 MEA957 0.50 POUT (W) 0.75 Z (Ω ) i ri x i Fig.16 Input impedance as a function of output power. VCE = 7.5 V; f = 900 MHz. handbook, halfpage 0 0.25 1 MEA958 0.50 POUT (W) 0.75 Z (Ω ) i ri x i Fig.17 Input impedance as a function of output power. VCE = 10 V; f = 900 MHz. handbook, halfpage 0 0.25 1 –10 MEA959 0.50 POUT (W) 0.75 Z (Ω ) i ri xi

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.18 Efficiency as a function of output power. f = 900 MHz. handbook, halfpage 0 0.5 1.5 MEA961 η (%) POUT (W) V =CE 6 V 10 V 7.5 V Fig.19 Output power as a function of input power. f = 900 MHz. handbook, halfpage 0 100 300 1.5 0.5 MEA962 200 P OUT (W) P IN (mW) V =CE 10 V 6 V 7.5 V Fig.20 Power gain as a function of output power. f = 900 MHz. handbook, halfpage 0 0.5 1.5 MEA960 G p (dB) POUT (W) V =CE 10 V 6 V 7.5 V Fig.21 Maximum unilateral power gain as a function of frequency. IC = 70 mA; VCE = 10 V; Tamb =2 5°C. handbook, halfpage50 MBB802 102 103 104 f (MHz) G UM (dB)

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 handbook, full pagewidth MBB803 100 250 100 250 + j – j

2 GHz

40 MHz

Fig.22 Common emitter input reflection coefficient (S11). IC = 70 mA; VCE = 10 V; Tamb =2 5°C. Zo =5 0Ω . handbook, full pagewidth MBB806 180 ϕ ϕ 30o 60o 90o 120o 150o o 150o 120o 90o 60o 30o 80 40100 60 20 Fig.23 Common emitter forward transmission coefficient (S21). IC = 70 mA; VCE = 10 V; Tamb =2 5°C.

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Fig.24 Common emitter reverse transmission coefficient (S12). IC = 70 mA; VCE = 10 V; Tamb =2 5°C. handbook, full pagewidth MBB805 180 ϕ ϕ 30o 60o 90o 120o 150o o 150o 120o 90o 60o 30o handbook, full pagewidth MBB804 100 250 100 250 + j – j Fig.25 Common emitter output reflection coefficient (S22). IC = 70 mA; VCE = 10 V; Tamb =2 5°C. Zo =5 0Ω .

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 PACKAGE OUTLINE UNIT A 1 bp cD E e1 H E Lp Qy wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.10 0.01 1.8 1.5 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.10.2 DIMENSIONS (mm are the original dimensions) SOT223 96-11-11 97-02-28 w Mbp D e A Lp Q detail X H E E v M A AB B c y 0 2 4 mm scale A X 13 2 Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.