BFG94_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFG94 NPN 6 GHz wideband transistor

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94

FEATURES

  • High power gain
  • Low noise figure
  • Low intermodulation distortion
  • Gold metallization ensures excellent reliability.

DESCRIPTION

NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in communication and instrumentation systems. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. page 4 123 MSB002 - 1Top view QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 15 V VCEO collector-emitter voltage open base −− 12 V IC DC collector current −− 60 mA Ptot total power dissipation up to T s = 140°C (note 1) −− 700 mW C re feedback capacitance I C = 0; VCE = 10 V; f = 1 MHz −− 0.8 pF fT transition frequency I C = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25°C 46 − GHz G UM maximum unilateral power gain I C = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25°C 11.5 13.5 − dB VO output voltage I C = 45 mA; VCE = 10 V; dim =−60 dB; RL = 75Ω ; f = 800 MHz; Tamb = 25°C − 500 − mV PL1 output power at 1 dB gain compression IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25°C − 21.5 − dBm

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 60 mA Ptot total power dissipation up to T s = 140°C (note 1) − 700 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 140°C (note 1) 50 K/W

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 CHARACTERISTICS Tj = 25°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. dim =−60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75Ω ; Tamb = 25°C; Vp = VO at dim =−60 dB; fp = 795.25 MHz; Vq = VO −6 dB; Vr = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 3. IC = 45 mA; VCE = 10 V; RL = 75Ω ; Tamb = 25°C; Vq = VO = 280 mV; fp = 250 MHz; fq = 560 MHz; measured at f(p+q) = 810 MHz. 4. IC = 45 mA; VCE = 10 V; RL = 50Ω ;Tamb = 25°C; fp = 1000 MHz; fq = 1001 MHz; measured at f(2p−q) and f(2q−p). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB = 10 V −− 100 nA hFE DC current gain I C = 30 mA; VCE = 5 V 45 90 − IC = 45 mA; VCE = 10 V − 100 − C c collector capacitance I E = ie = 0; VCB = 10 V; f = 1 MHz − 0.9 2 pF C e emitter capacitance I C = ie = 0; VEB = 0.5 V; f = 1 MHz− 2.9 4.5 pF C re feedback capacitance I C = ic = 0; VCE = 10 V; f = 1 MHz − 0.5 0.8 pF fT transition frequency I C = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25°C 4 −− GHz IC = 30 mA; VCE = 5 V; f = 1 GHz; Tamb = 25°C 46 − GHz G UM maximum unilateral power gain (note1) IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25°C 11.5 13.5 − dB F minimum noise figure Γs =Γopt; IC = 45 mA; VCE = 10 V; f = 500 MHz − 2.7 − dB Γs =Γopt; IC = 45 mA; VCE = 10 V; f = 1 GHz − 3 − dB VO output voltage note 2 − 500 − mV d2 second order intermodulation distortion note 3 −− 51 − dB PL1 output power at 1 dB gain compression IC = 45 mA; VCE = 10 V; RL = 50Ω ; Tamb = 25°C; measured at f = 1 GHz − 21.5 − dBm ITO third order intercept point note 4 − 34 − dBm G UM 10 S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.2 Test circuit for second and third order intermodulation distortion. L1 = L3 = 5µH micro-choke. L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm. MBB780 10 kΩ L2 1 nF output 75 Ω247 Ω 1 nF 1 nF DUT input 75 Ω +VBB +VCC 2 pF 33 Ω 33 Ω Fig.3 Measurement set-up for third order intercept point and 1 dB gain compression. MBB789 INPUT SLUG TUNER OUTPUT SLUG TUNER BIAS TEE input output DUT TEST FIXTURE BIAS TEE Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 800 600 200 400 MBB790 150 Ts (°C) P tot (mW) Fig.5 DC current gain as a function of collector current. VCE = 10 V; Tj=2 5°C handbook, halfpage 01 0 2 0 3 0 120 MCD087 hFE I (mA)C

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.6 Feedback capacitance as a function of collector-emitter voltage. IC = ic = 0; f = 1 MHz. handbook, halfpage V CE (V) 048 1 6 0.8 MBB791 0.6 0.4 0.2 C re (pF) Fig.7 Transition frequency as a function of collector current. VCE = 10 V; f = 1 GHz. handbook, halfpage 01 0 2 0 4 0 MCD089 I (mA)C (GHz) Tf Fig.8 Maximum unilateral power gain as a function of frequency. Ic = 45 mA; VCE = 10 V. handbook, halfpage MBB792 40 400 4000 f (MHz) G UM (dB) Fig.9 Maximum unilateral power gain as a function of frequency. Ic = 20 mA; VCE = 8 V. handbook, halfpage40 MBB793 102 103 104 f (MHz) G UM (dB)

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.10 Maximum available stable gain as a function of frequency. Ic = 20 mA; VCE = 8 V. handbook, halfpage20 MBB794 102 103 104 f (MHz) G max (dB) Fig.11 Gain as a function of collector current. VCE = 8 V; f = 1 GHz. G max = maximum available stable gain. G UM = maximum unilateral power gain. handbook, halfpage MBB795 10 20 30 40 gain (dB) I (mA)C G max G UM Fig.12 Second order intermodulation distortion as a function of collector current. Ic = 45 mA; VCE = 10 V; f(p+q) = 810 MHz. See test circuit, Fig.2 handbook, halfpage 10 30 70 MBB782 I (mA)C (dB) Fig.13 Third order intermodulation distortion as a function of collector current. Ic = 45 mA; VCE = 10 V; f(p+q−r)= 793.25 MHz. See test circuit, Fig.2 handbook, halfpage 10 30 70 MBB781 I (mA)C (dB)

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.14 Minimum noise figure as a function of collector current. VCE = 8 V. handbook, halfpage4 MCD094 101 F (dB) I (mA)C f = 2 GHz

500 MHz

1 GHz

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth MBB788 0.2 0.2 0.5 + j − j 5 dB unstable region stability circle 0.5 10520.50.2 F = 1.80 dBmin OPT 2 dB 2.5 dB 3 dB 4 dB Fig.15 Noise circle. Ic = 15 mA; VCE = 10 V; f = 500 MHz. handbook, full pagewidth MBB787 0.2 0.5 0.2 0.5 + j − j 3 dB 4 dB 11 0 52 0.5 0.2 F = 2.25 dBmin OPT 2.5 dB 3.5 dB 5 dB Fig.16 Noise circle. Ic = 15 mA; VCE = 10 V; f =1 GHz.

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth MBB784 100 250 100 250 + j – j

3 GHz

40 MHz

Fig.17 Common emitter input reflection coefficient (S11). IC = 45 mA; VCE = 10 V. ZO =5 0Ω . handbook, full pagewidth MBB786 180° + ϕ − ϕ 30° 60° 90° 120° 150° 150° 120° 90° 60° 30° Fig.18 Common emitter forward transmission coefficient (S21). IC = 45 mA; VCE = 10 V.

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth MBB785 180° + ϕ − ϕ 30° 60° 90° 120° 150° 150° 120° 90° 60° 30° 40 2050 30 10 Fig.19 Common emitter reverse transmission coefficient (S12). IC = 45 mA; VCE = 10 V. handbook, full pagewidth MBB783 100 250 100 250 + j – j 10 25 100 250 50 Fig.20 Common emitter output reflection coefficient (S22). IC = 45 mA; VCE = 10 V. ZO =5 0Ω .

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 PACKAGE OUTLINE UNIT A 1 bp cD E e1 H E Lp Qy wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.10 0.01 1.8 1.5 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.10.2 DIMENSIONS (mm are the original dimensions) SOT223 96-11-11 97-02-28 w Mbp D e A Lp Q detail X H E E v M A AB B c y 0 2 4 mm scale A X 13 2 Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.