BFG93A | DigiCamel IC Datasheet

Online Datasheet

Read BFG93A online.

BFG93A_15 JMNIC | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 16

Technical content

Product speciﬁcation Supersedes data of 1995 Sep 25

1998 Sep 23

BFG93A; BFG93A/X NPN 6 GHz wideband transistors book, halfpage M3D071

1998 Sep 23 2

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X

FEATURES

High power gain
Low noise figure
Gold metallization ensures excellent reliability.

APPLICATIONS

Wideband applications in the UHF and microwave range.

DESCRIPTION

NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING PIN DESCRIPTION BFG93A 1 collector 2 base 3 emitter 4 emitter BFG93A/X 1 collector 2 emitter 3 base 4 emitter MARKING TYPE NUMBER CODE BFG93A R8 BFG93A/X V15 Fig.1 SOT143B. handbook, 2 columns Top view MSB014 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 15 V VCEO collector-emitter voltage open base −− 12 V IC collector current (DC) −− 35 mA Ptot total power dissipation Ts ≤ 85 °C −− 300 mW C re feedback capacitance I C =ic = 0; VCB = 5 V; f = 1 MHz − 0.6 − pF fT transition frequency I C = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 − GHz G UM maximum unilateral power gain IC = 30 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz − 16 − dB IC = 30 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz − 10 − dB F noise ﬁgure Γs = Γopt; IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz − 1.7 − dB

1998 Sep 23 3

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 35 mA Ptot total power dissipation T s ≤ 85 °C; note 1 − 300 mW Tstg storage temperature range −65 +150 °C Tj junction operating temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 290 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB =5V −− 50 nA hFE DC current gain I C = 30 mA; VCE = 5 V 40 90 − C c collector capacitance I E =ie = 0; VCB =5V ; f=1M H z − 0.9 − pF C e emitter capacitance I C =ic = 0; VEB =5V ; f=1M H z − 1.9 − pF C re feedback capacitance I C =ic = 0; VCB =5V ; f=1M H z − 0.6 − pF fT transition frequency I C = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 − GHz G UM maximum unilateral power gain; note 1 IC = 30 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz − 16 − dB IC = 30 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz − 10 − dB F noise ﬁgure Γs = Γopt; IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 5 mA; VCE =8V ; Tamb =2 5°C; f = 2 GHz − 2.3 − dB G UM 10 S 21 1S 11 2–() 1S 22

1998 Sep 23 4

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 MBG245 150 Ptot (mW) Ts (o C) Fig.3 DC current gain as a function of collector current; typical values. VCE =5V . handbook, halfpage 01 0 2 0 3 0 120 MCD087 hFE I (mA)C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC =ic = 0; f = 1 MHz. handbook, halfpage 048 1 6 1.0 MCD088 0.8 0.6 0.4 0.2 C re (pF) V (V)CB Fig.5 Transition frequency as a function of collector current; typical values. VCE = 5 V; Tamb =2 5°C; f = 500 MHz. handbook, halfpage 01 0 2 0 4 0 MCD089 I (mA)C (GHz) Tf

1998 Sep 23 5

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X Fig.6 Gain as a function of collector current; typical values. VCE = 8 V; f = 500 MHz. handbook, halfpage 10 20 40 MCD090 gain (dB) I (mA)C MSG G UM Fig.7 Gain as a function of collector current; typical values. VCE = 8 V; f = 1 GHz. handbook, halfpage 10 20 40 MCD091 gain (dB) I (mA)C MSG G UM Fig.8 Gain as a function of frequency; typical values. VCE = 8 V; IC = 10 mA. handbook, halfpage50 MCD092 102 103 104 gain (dB) f (MHz) MSG G UM G max Fig.9 Gain as a function of frequency; typical values. VCE = 8 V; IC =3 0m A . handbook, halfpage50 MCD093 102 103 104 gain (dB) f (MHz) G UM MSG G max

1998 Sep 23 6

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =8V . handbook, halfpage4 MCD094 101 F (dB) I (mA)C f = 2 GHz

500 MHz

1 GHz

Fig.11 Minimum noise figure as a function of frequency; typical values. VCE =8V . handbook, halfpage4 MCD095 F (dB) f (MHz) 5 mA 10 mA 10 410 310 2 I = 30 mAC Fig.12 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.5 0.2 0.5 MCD096 stability circle unstable region + j – j 22.2 dB MSG 0.2 1 25 1 00.50.2 OPT F = 1.4 dBmin 2 dB 4 dB 3 dB Zo =5 0Ω . Maximum stable gain = 22.2 dB.

1998 Sep 23 7

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X Zo =5 0Ω . Maximum stable gain = 10.4 dB. Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.5 0.2 0.5 + j – j MCD097 unstable region stability circle 0.2 1 25 1 00.2 0.5 F = 2 dBmin OPT 6 dB 4 dB 2.5 dB 10.4 dB MSG Zo =5 0Ω . Fig.14 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.5 0.2 0.5 MCD098 + j – j 0.2 OPT 1 25 1 00.2 0.5 F = 3 dBmin 5 dB 4 dB 3.5 dB G = 9 dBmax 8 dB 7 dB

1998 Sep 23 8

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X VCE = 8 V; IC = 30 mA; Zo =5 0Ω . Fig.15 Common emitter input reflection coefficient (S11). handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD099 0.5 10.2 10 52

40 MHz

3 GHz

Fig.16 Common emitter forward transmission coefficient (S21). handbook, full pagewidth 135_ o 180 o 135o 90o 45o 0 o _ 45o _ 90o MCD100 1020304050 VCE = 8 V; IC = 30 mA; Rmax =5 0Ω .

1998 Sep 23 9

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X Fig.17 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 135_ o 180 o 135o 90o 45o 0 o _ 45o _ 90o MCD102 VCE = 8 V; IC = 30 mA; Rmax = 0.2Ω. VCE = 10 V; IC = 15 mA; Zo =5 0Ω . Fig.18 Common emitter output reflection coefficient (S22). handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD101 0.5 10.2 10 52

1998 Sep 23 10

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X SPICE parameters for BFR91A(/X) die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.328 fA 2 BF 102.0 − 3 NF 1.000 − 4 VAF 51.90 V 5 IKF 8.155 A 6 ISE 13.90 fA 7 NE 15.12 − 8 BR 17.69 − 9 NR 994.0 m 10 VAR 3.280 V 11 IKR 10.00 A 12 ISC 1.043 aA 13 NC 1.189 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 763.6 m Ω 18 RC 9.000 Ω 19 (note 1) XTB 0.000 − 20 (note 1) EG 1.110 EV 21 (note 1) XTI 3.000 − 22 CJE 2.032 pF 23 VJE 600.0 mV 24 MJE 290.0 m 25 TF 6.557 ps 26 XTF 38.97 − 27 VTF 10.93 V 28 ITF 521.0 mA 29 PTF 0.000 deg 30 CJC 1.003 pF 31 VJC 340.8 mV 32 MJC 194.2 m 33 XCJC 120.0 m 34 TR 3.073 ns 35 (note 1) CJS 0.000 F Note 1. These parameters have not been extracted, the default values are shown. List of components(see Fig.19) 36 (note 1) VJS 750.0 mV 37 (note 1) MJS 0.000 − 38 FC 800.0 m DESIGNATION VALUE UNIT C be 84 fF C cb 17 fF C ce 191 fF L1 0.12 nH L2 0.21 nH L3 0.06 nH L B 0.95 nH LE 0.40 nH SEQUENCE No. PARAMETER VALUE UNIT Fig.19 Package equivalent circuit SOT143B. QL B = 50; QLE = 50. QL B,E (f) = QLB,E √ (f/fc). fc = scaling frequency = 1000 MHz. handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 C cb C be ce C

1998 Sep 23 11

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

1998 Sep 23 12

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1998 Sep 23 13

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X NOTES

1998 Sep 23 14

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X NOTES

1998 Sep 23 15

Philips Semiconductors Product speciﬁcation NPN 6 GHz wideband transistors BFG93A; BFG93A/X NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Printed in The Netherlands 125104/00/04/pp16 Date of release: 1998 Sep 23 Document order number: 9397 750 04351

Product Information

BFG93A specifications and overview.

Summary

NPN 6 GHz wideband transistors

Description

NPN 6 GHz wideband transistors

Source title BFG93A_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

Related Parts

More parts from the same family.

Browse manufacturer