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BFG92AX_15 JMNIC | Alldatasheet

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PDF pages: 16

Technical content

Product speciﬁcation Supersedes data of 1995 Sep 12

1998 Sep 23

NPN 5 GHz wideband transistor book, halfpage M3D071

1998 Sep 23 2

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X

FEATURES

High power gain
Low noise figure
Gold metallization ensures excellent reliability.

APPLICATIONS

Wideband applications in the UHF and microwave range.

DESCRIPTION

Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143B. Marking code: V14. handbook, 2 columns Top view MSB014 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage −− 20 V VCEO collector-emitter voltage −− 15 V IC collector current (DC) −− 25 mA Ptot total power dissipation Ts ≤ 60 °C −− 400 mW C re feedback capacitance I C =ic = 0; VCB = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency I C = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz G UM maximum unilateral power gain IC = 15 mA; VCE =1 0V ; Tamb =2 5°C; f = 1 GHz − 16 − dB IC = 15 mA; VCE =1 0V ; Tamb =2 5°C; f = 2 GHz − 11 − dB F noise ﬁgure Γs = Γopt; IC = 5 mA; VCE =1 0V ; Tamb =2 5°C; f = 1 GHz − 2 − dB

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Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 25 mA Ptot total power dissipation T s ≤ 60 °C; note 1 − 400 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 290 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current I E = 0; VCB =1 0V −− 50 nA hFE DC current gain I C = 15 mA; VCE = 10 V 40 90 − C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 0.6 − pF C e emitter capacitance I C =ic = 0; VEB = 10 V; f = 1 MHz − 0.9 − pF C re feedback capacitance I C =ic = 0; VCB = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency I C = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz G UM maximum unilateral power gain; note 1 IC = 15 mA; VCE =1 0V ; Tamb =2 5°C; f = 1 GHz − 16 − dB IC = 15 mA; VCE =1 0V ; Tamb =2 5°C; f = 2 GHz − 11 − dB F noise ﬁgure Γs = Γopt; IC = 5 mA; VCE =1 0V ; Tamb =2 5°C; f = 1 GHz − 2 − dB Γs = Γopt; IC = 5 mA; VCE =1 0V ; Tamb =2 5°C; f = 2 GHz − 3 − dB G UM 10 S 21 1S 11 2–() 1S 22

1998 Sep 23 4

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 800 600 200 400 MBB963 - 1 150 Ptot (mW) Ts (o C) Fig.3 DC current gain as a function of collector current; typical values. VCE =1 0V . handbook, halfpage 01 0 2 0 3 0 120 MCD074 hFE I (mA)C Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. IC =ic = 0; f = 1 MHz. handbook, halfpage 0.6 0.4 0.2 62 4 MCD075 C re (pF) V (V)CB Fig.5 Transition frequency as a function of collector current; typical values. VCE = 10 V; Tamb =2 5°C; f = 500 MHz. handbook, halfpage 01 0 2 0 3 0 MBB275 I (mA)C fT (GHz)

1998 Sep 23 5

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X Fig.6 Gain as a function of collector current; typical values. VCE = 10 V; f = 500 MHz. handbook, halfpage MCD077 51 0 15 20 gain (dB) I (mA)C MSG G UM Fig.7 Gain as a function of collector current; typical values. VCE = 10 V; f = 1 GHz. handbook, halfpage MCD078 51 0 1 5 2 0 gain (dB) I (mA)C MSG G UM Fig.8 Gain as a function of frequency; typical values. VCE = 10 V; IC = 5 mA. handbook, halfpage50 MCD079 102 103 104 gain (dB) f (MHz) MSG G UM G max Fig.9 Gain as a function of frequency; typical values. VCE = 10 V; IC =1 5m A . handbook, halfpage50 MCD080 102 103 104 gain (dB) f (MHz) MSG G UM G max

1998 Sep 23 6

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =1 0V . handbook, halfpage4 MCD081 101 F (dB) I (mA)C f = 2 GHz

1 GHz

500 MHz

Fig.11 Minimum noise figure as a function of frequency; typical values. VCE =1 0V . handbook, halfpage4 MCD082 F (dB) f (MHz) 10 410 310 2 I = 15 mAC 5 mA 10 mA Fig.12 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 j – j MCD083 23.9 dB unstable region stability circle MSG 25 1 00.50.2 1 2 dB 3 dB 4 dB OPT F = 1.6 dBmin Zo =5 0Ω . Maximum stable gain = 23.9 dB.

1998 Sep 23 7

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X Zo =5 0Ω . Maximum stable gain = 19.9 dB. Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD084 19.9 dB unstable region stability circle MSG 10.2 25 1 00.5 OPT F = 2.1 dBmin 2.5 dB 3 dB 4 dB Zo =5 0Ω . Fig.14 Common emitter noise figure circles; typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD085 10.2 51 00.5 2 G max 12 dB 12.5 dB 10 dB F = 3 dBmin OPT 5 dB 4 dB 3.5 dB

1998 Sep 23 8

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X VCE = 10 V; IC =1 5m A . Fig.15 Common emitter input reflection coefficient (S11); typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 j – j MCD086 0.5 10.2 10 52

3 GHz

40 MHz

Fig.16 Common emitter forward transmission coefficient (S21); typical values. VCE = 10 V; IC =1 5m A . handbook, full pagewidth 135_ o 180 o 135o 90o 45o 0 o _ 45o _ 90o MCD072 1020304050

1998 Sep 23 9

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X Fig.17 Common emitter reverse transmission coefficient (S12); typical values. handbook, full pagewidth 135_ o 180 o 135o 90o 45o 0 o _ 45o _ 90o MCD071 VCE = 10 V; IC =1 5m A . VCE = 10 V; IC =1 5m A . Fig.18 Common emitter output reflection coefficient (S22); typical values. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD073 0.5 10.2 10 52

1998 Sep 23 10

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X SPICE parameters for BFR90A/X die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 411.8 aA 2 BF 102.6 − 3 NF 997.2 m 4 VAF 62.67 V 5 IKF 3.200 A 6 ISE 4.010 fA 7 NE 1.577 − 8 BR 18.10 − 9 NR 996.2 m 10 VAR 3.369 V 11 IKR 1.281 A 12 ISC 279.9 aA 13 NC 1.075 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 1.164 Ω 18 RC 2.320 Ω 19 (note 1) XTB 0.000 − 20 (note 1) EG 1.110 eV 21 (note 1) XTI 3.000 − 22 CJE 890.5 fF 23 VJE 600.0 mV 24 MJE 258.5 m 25 TF 15.49 ps 26 XTF 39.14 − 27 VTF 2.152 V 28 ITF 213.7 mA 29 PTF 0.000 deg 30 CJC 546.5 fF 31 VJC 380.8 mV 32 MJC 202.9 m 33 XCJC 150.0 m 34 TR 5.618 ns 35 (note 1) CJS 0.000 F Note 1. These parameters have not been extracted, the default values are shown. List of components(see Fig.19) 36 (note 1) VJS 750.0 mV 37 (note 1) MJS 0.000 − 38 FC 850.0 m DESIGNATION VALUE UNIT C be 84 fF C cb 17 fF C ce 191 fF L1 0.12 nH L2 0.21 nH L3 0.06 nH L B 0.95 nH LE 0.40 nH SEQUENCE No. PARAMETER VALUE UNIT Fig.19 Package equivalent circuit SOT143B. QL B = 50; QLE = 50. QL B,E (f) = QLB,E √ (f/fc). fc = scaling frequency = 100 MHz. handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 C cb C be ce C

1998 Sep 23 11

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

1998 Sep 23 12

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1998 Sep 23 13

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X NOTES

1998 Sep 23 14

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X NOTES

1998 Sep 23 15

Philips Semiconductors Product speciﬁcation NPN 5 GHz wideband transistor BFG92A/X NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Product Information

BFG92AX specifications and overview.

Summary

NPN 5 GHz wideband transistor

Description

NPN 5 GHz wideband transistor

Source title BFG92AX_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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