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BFG591_15 JMNIC | Alldatasheet

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PDF pages: 12

Technical content

Product speciﬁcation Supersedes data of November 1992 File under Discrete Semiconductors, SC14

1995 Sep 04

NPN 7 GHz wideband transistor

1995 Sep 04 2

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591

FEATURES

High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.

APPLICATIONS

Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.

DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. fpage 4 123 MSB002 - 1Top view QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V IC collector current (DC) −− 200 mA Ptot total power dissipation up to Ts =8 0°C; note 1 −− 2W hFE DC current gain I C = 70 mA; VCE = 8 V 60 90 250 C re feedback capacitance I C =Ic = 0; VCE = 12 V; f = 1 MHz − 0.7 − pF fT transition frequency I C = 70 mA; VCE =1 2V ; f=1G H z− 7 − GHz G UM maximum unilateral power gain IC = 70 mA; VCE =1 2V ; f = 900 MHz; Tamb =2 5°C − 13 − dB insertion power gain I C = 70 mA; VCE =1 2V ; f = 900 MHz; Tamb =2 5°C − 12 − dBs21

1995 Sep 04 3

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 200 mA Ptot total power dissipation up to T s =8 0°C; note 1 − 2W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 35 K/W

1995 Sep 04 4

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj=2 5°C (unless otherwise speciﬁed). Notes 1. G UM is the maximum unilateral power gain, assuming s12 is zero. 2. dim = 60 dB (DIN45004B); Vp =V o;Vq =V o −6 dB; Vr=V o −6 dB; SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; IE =0 −− 20 V V(BR)CES collector-emitter breakdown voltage IC = 10 mA; IB =0 −− 15 V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC =0 −− 3V ICBO collector-base leakage current IE = 0; VCB =1 0V −− 100 nA hFE DC current gain I C = 70 mA; VCE = 8 V 6 09 02 5 0 C re feedback capacitance I B =Ib = 0; VCE =1 2V ; f = 1 MHz − 0.7 − pF fT transition frequency I C = 70 mA; VCE =1 2V ; f = 1 GHz − 7 − GHz G UM maximum unilateral power gain; note 1 IC = 70 mA; VCE =1 2V ; f = 900 MHz; Tamb =2 5°C − 13 − dB IC = 70 mA; VCE =1 2V ; f = 2 GHz; Tamb =2 5°C − 7.5 − dB insertion power gain I C = 70 mA; VCE =1 2V ; f = 1 GHz; Tamb =2 5°C − 12 − dB Vo output voltage note 2 − 700 − mV s21 G UM 10 s21 1s 11 2–() 1s 22

1995 Sep 04 5

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 Fig.2 Power derating curve. 0 50 100 200 2.0 MGC791 150 2.5 3.0 0.5 1.0 1.5 Ptot (W) Ts (oC) VCE =1 2V . Fig.3 DC current gain as a function of collector current, typical values. handbook, halfpage MRA749 101 250 100 150 200 hFE I (mA)C 10 210 110 2 IC = 0; f = 1 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. handbook, halfpage 1.2 0.8 0.4 41 6 MGC792 C re (pF) VCB (V) Fig.5 Transition frequency as a function of collector current, typical values. f = 1 GHz; VCE =1 2V . handbook, halfpage8 (GHz) fT 102 MGC793 IC (mA)

1995 Sep 04 6

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 f = 900 MHz; VCE =1 2V . Fig.6 Gain as a function of collector current; typical values. handbook, halfpage 04 0 8 0 G max IC (mA) 120 gain (dB) MGC795 G UM f = 2 GHz; VCE =1 2V . Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 04 0 8 0 G max G UM IC (mA) 120 gain (dB) MGC794 IC = 70 mA; VCE =1 2V . Fig.8 Gain as a function of frequency; typical values. handbook, halfpage50 MGC796 102 103 104 gain (dB) f (MHz) G UM G max MSG

1995 Sep 04 7

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 Fig.9 Intermodulation distortion as a function of collector current; typical values. VCE = 12 V; Vo = 700 mV; f(p+q-r)= 793.25 MHz. handbook, halfpage 04 0 8 0 IC (mA) 120 −20 dim (dB) −70 −30 MGC797 −40 −50 −60 Fig.10 Second order Intermodulation distortion as a function of collector current; typical values. VCE = 12 V; Vo = 316 mV; f(p+q)= 810 MHz. handbook, halfpage 04 0 8 0 IC (mA) 120 −20 (dB) −70 −30 MGC798 −40 −50 −60

1995 Sep 04 8

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 VCE = 12 V; IC = 70 mA; Zo =5 0Ω. Fig.11 Common emitter input reflection coefficient (s11); typical values. handbook, full pagewidth MGC799 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.5 0.2 0.5 2

40 MHz

3 GHz

0.2 1 5 VCE = 12 V; IC =7 0m A . Fig.12 Common emitter forward transmission coefficient (s21); typical values. handbook, full pagewidth MGC800 0 o 90o 135o 180 o 90o 50 40 30 20 10 45o 135o 45o

1995 Sep 04 9

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 VCE = 12 V; IC =7 0m A . Fig.13 Common emitter reverse transmission coefficient (s12); typical values. handbook, full pagewidth MGC801 0 o 90o 135o 180 o 90o 45o 135o 45o VCE = 12 V; IC = 70 mA; Zo =5 0Ω. Fig.14 Common emitter output reflection coefficient (s22); typical values. handbook, full pagewidth MGC802 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.2 0.5 0.2 1 2 5 0.5

1995 Sep 04 10

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 SPICE parameters for the BFG591 crystal Note 1. These parameters have not been extracted, the default values are shown. SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.341 fA 2 BF 123.5 − 3 NF .988 m 4 VAF 75.85 V 5 IKF 9.656 A 6 ISE 232.2 fA 7 NE 2.134 − 8 BR 10.22 − 9 NR 1.016 − 10 VAR 1.992 V 11 IKR 294.1 mA 12 ISC 211.0 aA 13 NC 997.2 − 14 RB 5.00 Ω 15 IRB 1.000 µA 16 RBM 5.00 Ω 17 RE 1.275 Ω 18 RC 920.6 m Ω (1) XTB 0.000 − 20 (1) EG 1.110 EV 21 (1) XTI 3.000 − 22 CJE 3.821 pF 23 VJE 600.0 mV 24 MJE 348.5 m 25 TF 13.60 ps 26 XTF 71.73 − 27 VTF 10.28 V 28 ITF 1.929 A 29 PTF 0.000 deg 30 CJC 1.409 pF 31 VJC 219.4 mV 32 MJC 166.5 m 33 XCJ 2.340 m 34 TR 543.7 ns (1) CJS 0.000 F 36 (1) VJS 750.0 mV 37 (1) MJS 0.000 − 38 FC 733.2 m List of components(see Fig.15) DESIGNATION VALUE UNIT C be 182 fF C cb 16 fF C ce 249 fF L1 0.025 nH L2 1.19 nH L3 0.60 nH L B 1.50 nH LE 0.50 nH QL B = 50; QLE = 50; QLB,E( f )=Q LB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.15 Package equivalent circuit SOT223. handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 C cb C be ce C

1995 Sep 04 11

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 PACKAGE OUTLINE Dimensions in mm. Fig.16 SOT223. handbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 A B 0.2 A 1.80 max 1616o max 10o max 0.10 0.01 0.32 0.24 123 MSA035 - 1 (4x) 0.1 BM M S seating plane 0.1 S o

1995 Sep 04 12

Philips Semiconductors Product speciﬁcation NPN 7 GHz wideband transistor BFG591 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Product Information

BFG591 specifications and overview.

Summary

NPN 7 GHz wideband transistor

Description

NPN 7 GHz wideband transistor

Source title BFG591_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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