BFG541_15 JMNIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFG541 NPN 9 GHz wideband transistor
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541
FEATURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT223 envelope. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. page 4 123 MSB002 - 1Top view
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage R BE =0 −− 15 V IC DC collector current −− 120 mA Ptot total power dissipation up to T s = 140°C; note 1 −− 650 mW hFE DC current gain I C = 40 mA; VCE =8 V ; Tj=2 5°C 60 120 250 C re feedback capacitance I C = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF fT transition frequency I C = 40 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =2 5°C − 15 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 9 − dB S212 insertion power gain I C = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =2 5°C 13 14 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE =8 V ; f = 900 MHz; Tamb =2 5°C − 1.3 1.8 dB PL1 output power at 1 dB gain compression IC = 40 mA; VCE = 8 V; RL =5 0Ω; f = 900 MHz; Tamb =2 5°C − 21 − dBm ITO third order intercept point I C = 40 mA; VCE = 8 V; RL =5 0Ω; f = 900 MHz; Tamb =2 5°C − 34 − dBm SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage R BE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation up to T s = 140°C; note 1 − 650 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 140°C; note 1 55 K/W
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. IC = 40 mA; VCE = 8 V; RL =5 0Ω ; f = 900 MHz; Tamb =2 5°C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2p−q) = 904 MHz. 3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL =Z s =7 5Ω ; Tamb =2 5°C; Vp =V o;Vq =V o −6 dB; Vr =V o −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz 4. IC = 40 mA; VCE = 8 V; Vo = 325 mV; Tamb =2 5°C; fp = 250 MHz; fq = 560 MHz; measured at f(p+q) = 810 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =8 V −− 50 nA hFE DC current gain I C = 40 mA; VCE = 8 V 60 120 250 C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF C c collector capacitance I E =ie = 0; VCB = 8 V; f = 1 MHz − 1 − pF C re feedback capacitance I C = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF fT transition frequency I C = 40 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain (note 1) IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =2 5°C − 15 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 9 − dB S212 insertion power gain I c = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =2 5°C 13 14 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE =8 V ; f = 900 MHz; Tamb =2 5°C − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE =8 V ; f = 900 MHz; Tamb =2 5°C − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE =8 V ; f = 2 GHz; Tamb =2 5°C − 2.1 − dB PL1 output power at 1 dB gain compression Ic = 40 mA; VCE = 8 V; RL =5 0Ω; f = 900 MHz; Tamb =2 5°C − 21 − dBm ITO third order intercept point note 2 − 34 − dBm Vo output voltage note 3 − 500 − mV d2 second order intermodulation distortion note 4 −− 50 − dB G UM 10 log S 21 1S 11 – 1S 22 –
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 Fig.2 Power derating curve. VCE ≤ 10 V. handbook, halfpage 0 50 100 200 1000 800 200 600 400 MRA654 - 1 150 Ptot (mW) Ts (o C) Fig.3 DC current gain as a function of collector current. VCE = 8 V; Tj=2 5°C. handbook, halfpage MRA655 250 200 hFE 10−2 10−1 11 0 IC (mA) 102 150 100 Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage MRA656 1.0 0.8 C re (pF) 04 8 1 2 VCB (V) 0.6 0.4 0.2 Fig.5 Transition frequency as a function of collector current. f = 1 GHz; Tamb =2 5°C. handbook, halfpage MRA657 fT (GHz) 10−1 11 0 IC (mA) VCE = 8 V 4 V 102
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 In Figs 6 to 9, GUM = maximum power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Gain as a function of collector current. VCE = 8 V; f = 900 MHz. handbook, halfpage MRA658 gain (dB) 02 0 MSG 40 60 IC (mA) G max G UM Fig.7 Gain as a function of collector current. VCE = 8 V; f = 2 GHz. handbook, halfpage MRA659 gain (dB) 0 2 04 06 0 IC (mA) G max G UM Fig.8 Gain as a function of frequency. IC = 10 mA; VCE = 8 V. handbook, halfpage MRA660 gain (dB) MSG G max G UM 10 f (MHz)102 103 104 Fig.9 Gain as a function of frequency. IC = 40 mA; VCE = 8 V. handbook, halfpage MRA661 gain (dB) MSG G max G UM 10 f (MHz)10 2 103 104
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 Fig.10 Intermodulation distortion as a function of collector current. handbook, halfpage 10 60 –20 –70 –60 MEA977 –50 –40 –30 20 30 40 50 I (mA)C d im (dB) Fig.11 Second order intermodulation distortion as a function of collector current. handbook, halfpage 10 60 –20 –70 –60 MEA976 –50 –40 –30 20 30 40 50 I (mA)C (dB) Fig.12 Minimum noise figure and associated available gain as functions of collector current. VCE = 8 V. handbook, halfpage MRA666 Fmin (dB) 11 0
2000 MHz 2000 MHz
1000 MHz
f = 900 MHz
900 MHz
500 MHz
100IC (mA) G ass (dB) G ass Fmin Fig.13 Minimum noise figure and associated available gain as functions of frequency. VCE = 8 V. handbook, halfpage MRA667 Fmin (dB) 102 103 104 40 mA 40 mA 10 mA IC =10 mA f (MHz) G ass (dB) G ass Fmin
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 handbook, full pagewidth MRA668 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° G = 13 dB G = 14 dB G = 15 dB G max = 15.3 dB F = 1.5 dB Fmin = 1.3 dB F = 2 dB F = 3 dB ΓOPTΓMS Fig.14 Noise circle figure. IC = 10 mA; VCE = 8 V; Zo =5 0Ω ; f = 900 MHz. handbook, full pagewidth MRA669 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° G = 6 dB G = 7 dB G = 8 dB G max = 8.5 dB F = 2.5 dB Fmin = 2.1 dB F = 3 dB F = 4 dB ΓOPT ΓMS Fig.15 Noise circle figure. IC = 10 mA; VCE = 8 V; Zo =5 0Ω ; f = 2 GHz.
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 handbook, full pagewidth MRA662 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5
3 GHz
40 MHz
180° −135° −90° −45° 45° 90° 135° Fig.16 Common emitter input reflection coefficient (S11). IC = 40 mA; VCE = 8 V. Zo =5 0Ω . Fig.17 Common emitter forward transmission coefficient (S21). IC = 40 mA; VCE = 8 V. handbook, full pagewidth MRA663 50 40 180° −135° −90° −45° 45°135° 90°
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 handbook, full pagewidth MRA664 0.5 0.4 0.3 40 MHz0.2 0.1 180° −135° −90° −45° 45° 90° 135° Fig.18 Common emitter reverse transmission coefficient (S12). IC = 40 mA; VCE = 8 V. handbook, full pagewidth MRA665 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 180° −135° −90° −45° 45° 90° 135° Fig.19 Common emitter output reflection coefficient (S22). IC = 40 mA; VCE = 8 V. Zo =5 0Ω .
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 PACKAGE OUTLINE UNIT A 1 bp cD E e1 H E Lp Qy wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.10 0.01 1.8 1.5 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.10.2 DIMENSIONS (mm are the original dimensions) SOT223 96-11-11 97-02-28 w Mbp D e A Lp Q detail X H E E v M A AB B c y 0 2 4 mm scale A X 13 2 Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.