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Product speciﬁcation File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR

FEATURES

High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. PINNING PIN DESCRIPTION BFG520 (Fig.1) Code: N36 1 collector 2 base 3 emitter 4 emitter BFG520/X (Fig.1) Code: N42 1 collector 2 emitter 3 base 4 emitter BFG520/XR (Fig.2) Code: N48 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143B. fpage Top view MSB014 Fig.2 SOT143R. handbook, 2 columns Top view MSB035 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V Ic DC collector current −− 70 mA Ptot total power dissipation up to Ts =8 8°C; note 1 −− 300 mW hFE DC current gain I C = 20 mA; VCE = 6 V; Tj=2 5°C 60 120 250 C re feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb =2 5°C − 13 − dB S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C 17 18 − dB F noise ﬁgure Γs = Γopt; Ic = 5 mA; VCE =6V ; f = 900 MHz; Tamb =2 5°C − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 1.9 − dB

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation up to T s = 88°C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts =8 8°C; note 1 290 K/W

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR CHARACTERISTICS Tj = 25°C unless otherwise speciﬁed. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. IC = 20 mA; VCE = 6 V; RL =5 0Ω; f = 900 MHz; Tamb =2 5°C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q)= 898 MHz and f(2q−p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); Vp =V o;Vq =V o −6 dB; Vr =V o −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 6 V −− 50 nA hFE DC current gain I C = 20 mA; VCE = 6 V 60 120 250 C e emitter capacitance I C =ic =0 ;VEB = 0.5 V; f = 1 MHz − 1 − pF C c collector capacitance I E =ie =0 ;VCB = 6 V; f = 1 MHz − 0.6 − pF C re feedback capacitance I C =0 ;VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency I C = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain (note 1) IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25°C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25°C − 13 − dB S212 insertion power gain I C = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25°C 17 18 − dB F noise ﬁgure Γs = Γopt;IC = 5 mA; VCE =6V ; f = 900 MHz; Tamb =2 5°C − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.6 2.1 dB Γs = Γopt;IC = 5 mA; VCE =6 V ; f = 2 GHz; Tamb =2 5°C − 1.9 − dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; RL =5 0Ω ; f = 900 MHz; Tamb =2 5°C − 17 − dBm ITO third order intercept point note 2 − 26 − dBm Vo output voltage note 3 − 275 − mV d2 second order intermodulation distortion IC = 20 mA; VCE = 6 V; Vo = 75 mV; Tamb =2 5°C; f(p+q) = 810 MHz −− 50 − dB G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 150 MRA670-1 Ptot (mW) Ts (oC) Fig.4 DC current gain as a function of collector current. VCE = 6 V; Tj=2 5°C. handbook, halfpage 250 100 150 200 MRA671 10−2 10−1 11 0 1 0 2 hFE IC (mA) Fig.5 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage 0.6 0.4 0.2 48 1 2 MRA672 C re (pF) VCB (V) Fig.6 Transition frequency as a function of collector current. f = 1 GHz; Tamb =2 5°C. handbook, halfpage12 fT (GHz) IC (mA) MRA673 10−1 11 0 1 0 2 VCE = 3 V VCE = 6 V

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR In Figs 7 to 10, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.7 Gain as a function of collector current. VCE = 6 V; f = 900 MHz; Tamb =2 5°C. handbook, halfpage 01 0 IC (mA)20 30 gain (dB) MRA674 MSG G UM G max Fig.8 Gain as a function of collector current. VCE = 6 V; f = 2 GHz; Tamb =2 5°C. handbook, halfpage 01 0 IC (mA) 20 30 gain (dB) MRA675 MSG G UM G max Fig.9 Gain as a function of frequency. IC = 5 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage50 gain (dB) MRA676 102 103 104 f (MHz) MSG G UM G max Fig.10 Gain as a function of frequency. IC = 20 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage50 gain (dB) MRA677 102 103 104 f (MHz) MSG G max G UM

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Fig.11 Intermodulation distortion as a function of collector current. handbook, halfpage 05 0 −20 −70 −60 −50 −40 −30 10 20 30 dim (dB) IC (mA) MEA975 Fig.12 Second order intermodulation distortion as a function of collector current. handbook, halfpage 05 0 −20 −70 −60 −50 −40 −30 10 20 30 (dB) IC (mA) MEA974 Fig.13 Minimum noise figure and associated available gain as functions of collector current. V CE = 6 V; Tamb =2 5°C. handbook, halfpage5 2 5 G ass (dB) Fmin (dB) IC (mA) MRA682 1 10210

2000 MHz

1000 MHz

f = 900 MHz G ass Fmin

900 MHz

500 MHz

Fig.14 Minimum noise figure and associated available gain as functions of frequency. VCE = 6 V; Tamb =2 5°C. handbook, halfpage5 2 5 G ass (dB) Fmin (dB) f (MHz) MRA683 102 104103 G ass 5 mA Fmin 20 mA 20 mA IC = 5 mA

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR handbook, full pagewidth MRA684 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° stability circle pot. unst. region F = 3 dB F = 2 dB F = 1.5 dB ΓOPT Fmin = 1. 1 dB Fig.15 Noise circle figure. IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo =5 0Ω . Fig.16 Noise circle figure. IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo =5 0Ω . handbook, full pagewidth MRA685 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 2 5 180° −135° −90° −45° 45° 90° 135° F = 3 dB F = 2.5 dB ΓOPT ΓMS Fmin = 1. 9 dB G = 12 dB G max = 13 dB G = 11 dB G = 10 dB F = 2 dB 0.2 0.5 1

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR handbook, full pagewidth MRA678 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

3 GHz

40 MHz

Fig.17 Common emitter input reflection coefficient (S11). IC = 20 mA; VCE = 6 V. Zo =5 0Ω . handbook, full pagewidth MRA679 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135° Fig.18 Common emitter forward transmission coefficient (S21). IC = 20 mA; VCE = 6 V.

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Fig.19 Common emitter reverse transmission coefficient (S12). IC = 20 mA; VCE = 6 V. handbook, full pagewidth MRA680 180° −90° −135° −45° 45° 90° 135° Fig.20 Common emitter output reflection coefficient (S22). IC = 20 mA; VCE = 6 V. Zo =5 0Ω . handbook, full pagewidth MRA681 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143R 97-03-10 0 1 2 mm scale Plastic surface mounted package; reverse pinning; 4 leads SOT143R D H E E AB v M A X A Lp Q detail X c y w M e B bp

Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Product Information

BFG520XR specifications and overview.

Summary

NPN 9 GHz wideband transistor

Description

NPN 9 GHz wideband transistor

Source title BFG520XR_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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