BFG520W

BFG520W_15 JMNIC | Alldatasheet

Document overview

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Technical content

Product specification Supersedes data of August 1995

1998 Oct 02

BFG520W; BFG520W/X NPN 9 GHz wideband transistors book, halfpage M3D123

1998 Oct 02 2

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X

FEATURES

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. MARKING TYPE NUMBER CODE BFG520W N3 BFG520W/X N4 PINNING PIN Fig.1 Simplified outline SOT343N. handbook, halfpage Top view MBK523 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage RBE =0 −− 15 V IC collector current (DC) −− 70 mA Ptot total power dissipation Ts ≤ 85 °C −− 500 mW hFE DC current gain I C = 20 mA; VCE = 6 V 60 120 250 C re feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 17 − dB |S21|2 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C1 6 1 7 − dB F noise figure Γs =Γ opt; IC = 5 mA; VCE = 6 V; f = 900 MHz − 1.1 1.6 dB

1998 Oct 02 3

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 70 mA Ptot total power dissipation T s ≤ 85 °C; see Fig.2; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1 180 K/W Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 MBG248 150 T ( C)o s P tot (mW) 600 200

1998 Oct 02 4

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero. 2. IC = 20 mA; VCE =6V ; RL =5 0Ω ; Tamb =2 5°C; fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz. 3. dim = −60 dB (DIN45004B); IC = 20 mA; VCE =6V ; Vp =V o; Vq =V o −6 dB; Vr =V o −6 dB; RL =7 5Ω ; 4. IC = 20 mA; VCE =6V ; Vo =7 5m V ; RL =7 5Ω ; Tamb =2 5°C; fp = 250 MHz; fq = 560 MHz; measured at fp +fq = 810 MHz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC =10 µA; IE =0 2 0 −− V V(BR)CES collector-emitter breakdown voltage IC =1 0µA; RBE =0 1 5 −− V V(BR)EBO emitter-base breakdown voltage IE =1 0µA; IC = 0 2.5 −− V ICBO collector leakage current V CB =6V ; IE =0 −− 50 nA hFE DC current gain I C = 20 mA; VCE = 6 V; see Fig.3 60 120 250 C re feedback capacitance I C = 0; VCB = 6 V; f = 1 MHz; see Fig.4 − 0.35 − pF fT transition frequency I C = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C; see Fig.5 − 9 − GHz G UM maximum unilateral power gain; note 1 IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 17 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb =2 5°C − 11 − dB |S21|2 insertion power gain I C = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C 16 17 − dB F noise figure Γs =Γ opt; IC = 5 mA; VCE =6V ; f = 900 MHz − 1.1 1.6 dB Γs =Γ opt; IC = 20 mA; VCE =6V ; f = 900 MHz − 1.6 2.1 dB Γs =Γ opt; IC = 5 mA; VCE =6V ; f = 2 GHz − 1.85 − dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; f = 900 MHz; R L =5 0Ω ; Tamb =2 5°C − 17 − dBm ITO third order intercept point note 2 − 26 − dBm Vo output voltage note 3 − 275 − mV d2 second order intermodulation distortion note 4 −− 50 − dB G UM 10 S 21 1S 11 2–() 1S 22

1998 Oct 02 5

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X VCE =6V . Fig.3 DC current gain as a function of collector current; typical values. handbook, halfpage150 100 10 1 MLB807 11 01 0 2 I (mA)C FEh IC = 0; f = 1 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage MLB808 0.6 0.4 0.2 2.5 5 7.5 10 V (V)CB C re (pF) Fig.5 Transition frequency as a function of collector current; typical values. f = 1 GHz; Tamb =2 5°C. handbook, halfpage MLB809 f (GHz) 10 2101 T I (mA)C V =CE 3 V 6 V

1998 Oct 02 6

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X f = 900 MHz; VCE =6V . Fig.6 Gain as a function of collector current; typical values. handbook, halfpage 10 20 40 MLB810 gain (dB) I (mA)C G MSG UM G max f = 2 GHz; VCE =6V . Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 10 20 40 MLB811 gain (dB) I (mA)C MSG UM G max G IC = 5 mA; VCE =6V . Fig.8 Gain as a function of frequency; typical values. handbook, halfpage50 MLB812 102 103 104 (dB) f (MHz) gain G max G UM MSG Fig.9 Gain as a function of frequency; typical values. IC = 20 mA; VCE =6V . handbook, halfpage50 MLB813 102 103 104 (dB) f (MHz) gain G max G UM MSG

1998 Oct 02 7

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X Fig.10 Intermodulation distortion as a function of collector current; typical values. Vo = 275 mV; fp +fq − fr = 793.25 MHz; VCE =6V ; R L =7 5Ω ; Tamb =2 5°C. handbook, halfpage MLB818 (dB) 01 0 2 0 4 0 d im I (mA)C Fig.11 Second order intermodulation distortion as a function of collector current; typical values. Vo = 75 mV; fp +fq = 810 MHz; VCE =6V ; R L =7 5Ω Tamb =2 5°C. handbook, halfpage MLB819 (dB) 01 0 2 0 4 0 I (mA)C Fig.12 Minimum noise figure as a function of collector current; typical values. VCE =6V . handbook, halfpage MLB820 10101 F (dB) I (mA)C

1000 MHz

f = 2000 MHz

500 MHz

900 MHz

Fig.13 Associated available gain as a function of collector current; typical values. VCE =6V . handbook, halfpage MLB821 10101 G (dB) I (mA)C ass f = 900 MHz

2000 MHz

1998 Oct 02 8

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X Fig.14 Minimum noise figure as a function of frequency; typical values. VCE =6V . handbook, halfpage MLB822 F (dB) 410310210 f (MHz) 20 mA I =C 5 mA Fig.15 Associated available gain as a function of frequency; typical values. VCE =6V . handbook, halfpage MLB823 10310210 G (dB) f (MHz) ass 20 mAI = 5 mAC

1998 Oct 02 9

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X Fig.16 Common emitter noise figure circles; typical values. handbook, full pagewidth MLB824 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.2 0.5 0.2 unstable region F = 1.5 dB F = 2 dB F = 3 dB min optΓ F = 1.1 dB 0.2 0.5 0.5 1 2 5 stability circle f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo =5 0Ω. Fig.17 Common emitter noise figure circles; typical values. handbook, full pagewidth MLB825 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.5 0.2 0.2 0.2 0.5 1 (1) (2) (5) (6) (7) (8) (3) (4) f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo =5 0Ω. (1) Γopt; Fmin = 1.85 dB. (2) F = 2 dB. (3) F = 2.5 dB. (4) F = 3 dB. (5) Γ ms ;G max = 11.8 dB. (6) G = 11 dB. (7) G = 10 dB. (8) G = 9 dB.

1998 Oct 02 10

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X Fig.18 Common emitter input reflection coefficient (S11); typical values. handbook, full pagewidth MLB814 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.5 0.2

3 GHz

0.2 0.2 0.5

40 MHz

VCE = 6 V; IC = 20 mA; Zo =5 0Ω. Fig.19 Common emitter forward transmission coefficient (S21); typical values. handbook, full pagewidth MLB815 0 o 90o 135o 180 o 90o 50 40 30 20 10 45o 135o 45o VCE = 6 V; IC = 20 mA.

1998 Oct 02 11

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X VCE = 6 V; IC = 20 mA. Fig.20 Common emitter reverse transmission coefficient (S12); typical values. handbook, full pagewidth MLB816 0 o 90o 135o 180 o 90o 45o 135o 45o Fig.21 Common emitter output reflection coefficient (S22); typical values. handbook, full pagewidth MLB817 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.5 0.2 3 GHz0.2 0.2 0.5 VCE = 6 V; IC = 20 mA; Zo =5 0Ω.

1998 Oct 02 12

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X SPICE parameters for the BFG520W die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.016 fA 2 BF 220.1 − 3 NF 1.000 − 4 VAF 48.06 V

5 IKF 510 mA

6 ISE 283 fA

7 NE 2.035 − 8 BR 100.7 − 9 NR 0.988 − 10 VAR 1.692 V 11 IKR 2.352 mA 12 ISC 24.48 aA 13 NC 1.022 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 775.3 m Ω 18 RC 2.210 Ω (1) XTB 0.000 − 20 (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 1.245 pF 23 VJE 600.0 mV 24 MJE 0.258 − 25 TF 8.616 ps 26 XTF 6.788 − 27 VTF 1.414 V 28 ITF 110.3 mA 29 PTF 45.01 deg 30 CJC 447.6 fF 31 VJC 189.2 mV 32 MJC 0.070 − 33 XCJC 0.130 − 34 TR 543.7 ps (1) CJS 0.000 F Note 1. These parameters have not been extracted, the default values are shown. List of components(see Fig.22) 36 (1) VJS 750.0 mV 37 (1) MJS 0.000 − 38 FC 0.780 − DESIGNATION VALUE UNIT C be 70 fF C cb 50 fF C ce 115 fF L1 0.34 nH L2 0.10 nH L3 0.25 nH L B 0.40 nH LE 0.40 nH SEQUENCE No. PARAMETER VALUE UNIT QL B = 50; QLE = 50; QLB,E( f )=Q LB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.22 Package equivalent circuit SOT343N. handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 C cb C be ce C

1998 Oct 02 13

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X PACKAGE OUTLINE UNIT A 1 max bp cD Eb1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.11.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 0.2 y 0.10.21.15 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 SOT343N D A Lp Q detail X c H E E v M A AB 0 1 2 mm scale A X Plastic surface mounted package; 4 leads SOT343N e w M B 97-05-21 bp y

1998 Oct 02 14

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Oct 02 15

Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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